Thermal Stability of Carbon-Ion-Implanted Nd:YVO4 Optical Planar Waveguide

2008 ◽  
Vol 52 (11) ◽  
pp. 80 ◽  
Author(s):  
Yang Tan ◽  
Feng Chen ◽  
Lei Wang ◽  
Ke-Ming Wang ◽  
Qing-Ming Lu
Keyword(s):  
Thermal Stability ◽  
Planar Waveguide ◽  
Carbon Ion ◽  
Optical Planar Waveguide ◽  
Thermal Stability Of ◽  
Ion Implanted

Thermal stability of ion-implanted hydrogen in ZnO

2002 ◽  
Vol 81 (21) ◽  
pp. 3996-3998 ◽  
Author(s):  
K. Ip ◽  
M. E. Overberg ◽  
Y. W. Heo ◽  
D. P. Norton ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of ◽  
Ion Implanted

Investigation of the thermal stability of ion-implanted and laser annealed silicon layers

1987 ◽  
Vol 46 (4) ◽  
pp. 364-368
Author(s):  
S. A. Batishche ◽  
N. I. Danilovich ◽  
V. A. Mostovnikov ◽  
A. M. Pristrem ◽  
G. A. Tatur
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of ◽  
Ion Implanted

Thermal stability of compressively strained Si/relaxed Si 1-x C x heterostructures formed on Ar ion implanted Si (100) substrates

2017 ◽  
Vol 70 ◽  
pp. 127-132
Author(s):  
You Arisawa ◽  
Yusuke Hoshi ◽  
Kentarou Sawano ◽  
Junji Yamanaka ◽  
Keisuke Arimoto ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Strained Si ◽  
Thermal Stability Of ◽  
Ion Implanted

Thermal Stability of Ion Implanted, Laser Annealed Films

1981 ◽  
Vol 4 ◽  
Author(s):  
S. R. Wilson ◽  
W. M. Paulson ◽  
G. Tam ◽  
R. B. Gregory ◽  
C. W. White ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Single Crystal ◽  
Rutherford Backscattering ◽  
Thermally Stable ◽  
Electrical Measurements ◽  
Polysilicon Films ◽  
Si Films ◽  
Higher Doses ◽  
Thermal Stability Of ◽  
Ion Implanted

ABSTRACTElectrical measurements and Rutherford backscattering have been used to evaluate the thermal stability of single crystal and polycrystalline Si films that were ion implanted and laser annealed. The films were implanted with 75As or 31p and annealed with either a pulsed ruby, a pulsed Nd:YAG or a CW­Ar+ laser. The samples were then thermally annealed at temperatures between 450 and 900°C. The single crystal samples implanted with arsenic below 1 × 10-15 cm−2 were thermally stable. For higher doses the electrical concentration reaches a minimum at 800°C. The same trends are observed in the polysilicon films for sufficiently high doping levels. RBS shows that As is precipitating at 700°C in single crystal material and has begun to go back into solution at 900°C for concentrations of ∼7 × 1020 cm−3. Similar trends are observed for 31P implanted samples.

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