Thermal Stability of Ion Implanted, Laser Annealed Films

1981 ◽  
Vol 4 ◽  
Author(s):  
S. R. Wilson ◽  
W. M. Paulson ◽  
G. Tam ◽  
R. B. Gregory ◽  
C. W. White ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Single Crystal ◽  
Rutherford Backscattering ◽  
Thermally Stable ◽  
Electrical Measurements ◽  
Polysilicon Films ◽  
Si Films ◽  
Higher Doses ◽  
Thermal Stability Of ◽  
Ion Implanted

ABSTRACTElectrical measurements and Rutherford backscattering have been used to evaluate the thermal stability of single crystal and polycrystalline Si films that were ion implanted and laser annealed. The films were implanted with 75As or 31p and annealed with either a pulsed ruby, a pulsed Nd:YAG or a CW­Ar+ laser. The samples were then thermally annealed at temperatures between 450 and 900°C. The single crystal samples implanted with arsenic below 1 × 10-15 cm−2 were thermally stable. For higher doses the electrical concentration reaches a minimum at 800°C. The same trends are observed in the polysilicon films for sufficiently high doping levels. RBS shows that As is precipitating at 700°C in single crystal material and has begun to go back into solution at 900°C for concentrations of ∼7 × 1020 cm−3. Similar trends are observed for 31P implanted samples.

Dependence of thermal stability of NiSi and Ni(Pt)Si /Si on crystal orientation

2008 ◽  
Vol 1079 ◽  
Author(s):  
Kazuya Okubo ◽  
Kazuo Kawamura ◽  
Shinich Akiyama ◽  
Yasutoshi Kotaka ◽  
Tsukasa Itani ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Crystal Orientation ◽  
Crystallographic Analysis ◽  
Electrical Measurements ◽  
Promising Candidate ◽  
Excellent Thermal Stability ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Si Films ◽  
Thermal Stability Of

ABSTRACTWe report NiSi and Ni(Pt)Si films with excellent thermal stability showing a particular crystal orientation on Si(001). The Ni-silicide film with a deposition temperature of about 200 °C consists of a conformal domain structure. We examined detail crystallographic analysis of silicide and clarified the psudo-epitaxial growth of NiSi(202)//Si(220) [or NiSi(211)//Si(220)] was the key scheme of superior thermal stability. By using this optimized Ni-silicide formation process, we have fabricated Ni-silicide that is thermally stable up to 650 °C and shows low fluctuation in sheet resistance and low leakage current in electrical measurements. This process is a promising candidate for future silicidation technology.

scholarly journals The Thermal Stability of Aviation Fuel

1984 ◽  
Author(s):  
J. S. Mills ◽  
F. R. Edwards
Keyword(s):  
Thermal Stability ◽  
Research Tool ◽  
Aviation Fuel ◽  
Engine Oil ◽  
Thermally Stable ◽  
Fuel System ◽  
Flow Rates ◽  
Aircraft Fuel ◽  
Oil Cooler ◽  
Thermal Stability Of

The propensity of aviation turbine fuels to produce deposits in the oil-cooler and filter sections of aircraft fuel systems has been examined using a rig that simulates the fuel system of an aircraft and which employs realistic flow rates. All the fuels examined were found to be thermally stable up to temperatures in excess of those currently attained in engine oil coolers. Comparison with results obtained with the JFTOT indicates that this is not suited for use as a research tool.

Thermal stability of indium nitride single crystal films

1993 ◽  
Vol 73 (11) ◽  
pp. 7969-7971 ◽  
Author(s):  
Qixin Guo ◽  
Osamu Kato ◽  
Akira Yoshida
Keyword(s):  
Thermal Stability ◽  
Single Crystal ◽  
Indium Nitride ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Thermal Stability Of

Thermal stability of ion-implanted hydrogen in ZnO

2002 ◽  
Vol 81 (21) ◽  
pp. 3996-3998 ◽  
Author(s):  
K. Ip ◽  
M. E. Overberg ◽  
Y. W. Heo ◽  
D. P. Norton ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of ◽  
Ion Implanted

Enhancing the thermal stability of switched domains in lithium niobate single-crystal thin films

2020 ◽  
Vol 46 (7) ◽  
pp. 9192-9197 ◽  
Author(s):  
Liaoyuan Zhang ◽  
Wenping Geng ◽  
Xi Chen ◽  
Yimeng Li ◽  
Xiaojun Qiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Lithium Niobate ◽  
Single Crystal ◽  
Lithium Niobate Single Crystal ◽  
Thermal Stability Of

Investigation of the thermal stability of ion-implanted and laser annealed silicon layers

1987 ◽  
Vol 46 (4) ◽  
pp. 364-368
Author(s):  
S. A. Batishche ◽  
N. I. Danilovich ◽  
V. A. Mostovnikov ◽  
A. M. Pristrem ◽  
G. A. Tatur
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of ◽  
Ion Implanted

Synthesis and thermal stability of perovskite alkali metal strontium borohydrides

2016 ◽  
Vol 45 (2) ◽  
pp. 831-840 ◽  
Author(s):  
Kasper T. Møller ◽  
Morten B. Ley ◽  
Pascal Schouwink ◽  
Radovan Černý ◽  
Torben R. Jensen
Keyword(s):  
Thermal Stability ◽  
Alkali Metal ◽  
Thermally Stable ◽  
Perovskite Type ◽  
Thermal Stability Of

Synthesis of new thermally stable perovskite-type metal strontium borohydrides, MSr(BH4)3 (M = K, Rb, Cs).

Thermal Stability of CoSi2 on Single Crystal and Polycrystalline Silicon

1990 ◽  
Vol 182 ◽  
Author(s):  
J. R. Phillips ◽  
P. Revesz ◽  
J. O. Olowolafe ◽  
J. W. Mayer
Keyword(s):  
Electron Microscopy ◽  
Thermal Stability ◽  
Single Crystal ◽  
Polycrystalline Silicon ◽  
Sheet Resistivity ◽  
X Ray ◽  
Resistivity Measurements ◽  
Silicide Layer ◽  
Thermal Stability Of ◽  
Scanning Electron

AbstractThe thermal stability of Co silicide on single crystal and polycrystalline Si has been investigated. Co films were evaporated onto (100) Si and undoped polycrystalline Si and annealed in vacuum. Resulting silicide films were examined using Rutherford backscattering spectroscopy, scanning electron microscopy, electron—induced x—ray spectroscopy, and sheet resistivity measurements. We find that CoSi2 on single crystal (100) Si remains stable through 1000ºC. In contact with undoped polycrystalline Si, intermixing begins at temperatures as low as 650ºC for 30min annealing. The Co silicide and Si layers are intermixed after 750ºC 30min annealing, giving islands of Si surrounded by silicide material, with both components extending from the surface down to the underlying oxide layer. The behavior of CoSi2 contrasts with results reported for TiSi2 which agglomerates on single crystal Si around 900ºC but is stable on polycrystalline silicon as high as 800ºC. Resistivity measurements show that the Co silicide remained interconnected despite massive incursion by Si into the silicide layer.

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