Study of Film Uniformity on Large-Curvature Substrate Surface Based on Atomic Layer Deposition

2018 ◽  
Vol 55 (3) ◽  
pp. 033101
Author(s):  
来邻 Lai Lin ◽  
李旸晖 Li Yanghui ◽  
周辉 Zhou Hui ◽  
夏浩盛 Xia Haosheng ◽  
刘小煜 Liu Xiaoyu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Substrate Surface ◽  
Atomic Layer ◽  
Large Curvature ◽  
Layer Deposition

Controlling the electronic properties of SWCNT FETs via modification of the substrate surface prior to atomic layer deposition of 10 nm thick Al2O3film

2013 ◽  
Vol 24 (45) ◽  
pp. 455701
Author(s):  
Joonsung Kim ◽  
Jangyeol Yoon ◽  
Junhong Na ◽  
Seongmin Yee ◽  
Gyu Tae Kim ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Electronic Properties ◽  
Substrate Surface ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals USING OF ATOMIC LAYER DEPOSITION METHOD FOR OBTAINING THIN FILMS BASED ON LiMn2O4 AND LiFePO4

2020 ◽  
Vol 63 (9) ◽  
pp. 77-81
Author(s):  
Oksana Yu. Gants ◽  
Vladimir M. Kashkin ◽  
Angelina D. Yudina ◽  
Valentina O. Zhirnova ◽  
Anna S. Timonina ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Composition ◽  
Atomic Layer Deposition ◽  
Substrate Surface ◽  
Atomic Layer ◽  
Layer Growth ◽  
Process Temperature ◽  
Optimal Time ◽  
Influence Of Process Parameters ◽  
Layer Deposition

An approach to the synthesis of LiFePO4 and LiMn2O4 by atomic layer deposition is proposed and successfully implemented. The main regularities of the process are revealed and the method of synthesis realization is proposed. The following reagents were proposed and used: 2,2,6,6-tetramethylheptan-3,5 - dione of manganese, oxygen, iron (II) chloride, trimethyl phosphate, water and lithium tret-butylate. Nitrogen was used as an inert gas for purging the reactor and as a carrier gas. The influence of process parameters on the synthesis of thin films based on LiFePO4 and LiMn2O4 is described. It has been established that the phase composition of the resulting films is influenced by the time of precursor release and the process temperature. It is concluded that the increase in process temperature has a positive effect on the density of thin films of LiFePO4 and LiMn2O4. The optimum deposition temperature of LiFePO4 and LiMn2O4 is 400 ºC. It was shown that it is possible to regulate the content of each element and phase composition in films based on LiFePO4 and LiMn2O4 by changing the time of precursors release. The optimal time for the release of precursors for the synthesis of LiFePO4 and LiMn2O4 is 4 s under the stated conditions. Of great importance is the time of release of oxidizing agents-4 and 6 s for the deposition of LiFePO4 and LiMn2O4, respectively. The correlation of the layer growth rate per cycle was revealed, which was 0.2 nm/cycle for the synthesis of LiFePO4. The film obtained in the process is X-ray amorphous. To obtain the crystal structure, the films were annealed in argon at a temperature of 800 ºC. The mechanism of interaction of precursors with the substrate surface is studied. The influence of substrate activation on the uniformity of film growth is revealed.

scholarly journals Adsorption of Titanium Halides on Nitride and Oxide Surfaces during Atomic Layer Deposition: A DFT Study

Coatings ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 712
Author(s):  
Jeongwoo Park ◽  
Neung Kyung Yu ◽  
Donghak Jang ◽  
Eunae Jung ◽  
Hyunsik Noh ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Functional Groups ◽  
Density Functional ◽  
Substrate Surface ◽  
Atomic Layer ◽  
Dissociative Adsorption ◽  
Reaction Rate Constant ◽  
Dft Study ◽  
Layer Deposition

Various processes based on atomic layer deposition (ALD) have been reported for growing Ti-based thin films such as TiN and TiO2. To improve the uniformity and conformity of thin films grown via ALD, fundamental understanding of the precursor–substrate surface reactions is required. Herein, we present a density functional theory (DFT) study of the initial nucleation process of some titanium halide precursors (TiCl4, TiBr4, and TiI4) on Si surfaces having –OH or –NH2 functional groups. We consider the most favorable adsorption site in the reaction between the precursor and functional group of the surface, based on the thermodynamics and kinetics of the reaction. Sequential dissociation reaction mechanisms of halide ligands were systematically investigated. The exothermicity of the dissociative adsorption was found to be in the order of: TiI4 > TiBr4 > TiCl4. In addition, the precursors were observed to be more exothermic and show higher reaction rate constant when adsorbed on the –OH–terminated surface than on the –NH2–terminated surface. These observations reveal the selectivity of deposition by surface functional groups.

scholarly journals Application of in situ and ex situ Characterization of Atomic Layer Deposition Processes for Gallium Phosphide and Sodium Fluoride

2021 ◽  
Author(s):  
Sara Rose Kuraitis
Keyword(s):  
Atomic Layer Deposition ◽  
Sodium Fluoride ◽  
Gallium Phosphide ◽  
Semiconductor Device ◽  
Substrate Surface ◽  
Atomic Layer ◽  
Ex Situ ◽  
Layer By Layer ◽  
Layer Deposition ◽  
Vapor Deposition Technique

Atomic layer deposition (ALD) is a vapor deposition technique for synthesizing thin films with nanometer thickness control. ALD films are deposited on a substrate surface in a cyclic layer-by-layer fashion utilizing alternating doses of highly reactive chemical precursors. Precursors are selected to undergo self-limiting chemical reactions with the surface, and desired film thickness is achieved by varying the number of ALD cycles accordingly. Optimization of ALD process parameters and precursor chemistry enables conformal coating of arbitrary substrate geometries, including high aspect ratio features such as trenches. In the decades since its introduction, ALD has been used for applications across many industries, including semiconductor device manufacturing, emerging battery technologies, and optoelectronics. In this work, I present investigation of two previously reported chemistries for ALD of gallium phosphide (GaP), as well as improvements made to a custom ALD reactor to facilitate better process control and characterization. I also present a new process for thermal ALD of sodium fluoride (NaF), with potential applications in electrode coatings for sodium-ion batteries. To my knowledge, this is the first report of NaF ALD. Finally, I summarize obstacles which may be addressed in future studies that build upon this work.

The Use of the TMA as Stabilizing Reagent for the Li-O System Obtained by Atomic Layer Deposition

2019 ◽  
Vol 822 ◽  
pp. 787-794 ◽  
Author(s):  
Denis Nazarov ◽  
Ilya Ezhov ◽  
Ilya Mitrofanov ◽  
Oleksiy Lyutakov ◽  
Maxim Yu. Maximov
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Substrate Surface ◽  
Atomic Layer ◽  
X Ray ◽  
Air Atmosphere ◽  
Layer Deposition ◽  
Aluminum Oxide Layer ◽  
Secondary Ion ◽  
Deposited Films

Lithium-oxygen thin films were deposited by atomic layer deposition (ALD) on the surface of silicon and stainless-steel using lithium bis (trimethylsilyl) amide (LiHMDS) and different counter-reagents (water, ozone, oxygen plasma). The deposited films were non-stable at storage in the air atmosphere. Results of scanning electron microscopy showed that films show a tendency to crystallization and peeling from the substrate surface. X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectroscopy revealed that films mainly consist of LiOH/Li2CO3. Coating the surface of lithium-oxygen films with an aluminum oxide layer using the ALD trimethylaluminum (TMA) and water as precursors did not lead to a significant improvement in stability. Nevertheless, the stable films can be obtained using ALD supercycles consisting of sequential pulsing of LiHMDS-water-TMA-water at 250°C.

Broadband Absorption Coating for Large- curvature Surfacesby Atomic Layer Deposition

2021 ◽  
Author(s):  
zheng tingting ◽  
Chenying Yang ◽  
Yueguang Zhang ◽  
hailan wang ◽  
xiao chen ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Large Curvature ◽  
Broadband Absorption ◽  
Layer Deposition

Enhancement of Electrical Performance of Atomic Layer Deposited SnO Films via Substrate Surface Engineering

2021 ◽  
Author(s):  
In-Hwan Baek ◽  
Ah-Jin Cho ◽  
Ga Yeon Lee ◽  
HeeNang Choi ◽  
Sung Ok Won ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Engineering ◽  
Surface Reaction ◽  
Substrate Surface ◽  
Surface States ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Layer Deposition

Atomic layer deposition (ALD) is a technique based on the surface reaction of precursors; thus, it strongly depends on the surface states of the substrate. We demonstrate significant changes in...

scholarly journals Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Yen-Wei Yeh ◽  
Su-Hui Lin ◽  
Tsung-Chi Hsu ◽  
Shouqiang Lai ◽  
Po-Tsung Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Substrate Surface ◽  
Single Layer ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Cavity Surface ◽  
Step Coverage ◽  
Layer Deposition ◽  
Vertical Cavity Surface ◽  
Emitting Lasers

AbstractIn recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since plasma-enhanced chemical vapor deposition can no longer provide sufficient step coverage, the characteristics of atomic layer deposition ALD technology are used to solve this problem. ALD utilizes self-limiting interactions between the precursor gas and the substrate surface. When the reactive gas forms a single layer of chemical adsorbed on the substrate surface, no reaction occurs between them and the growth thickness can be controlled. At the Å level, it can provide good step coverage. In this study, recent research on the ALD passivation on micro-light-emitting diodes and vertical cavity surface emitting lasers was reviewed and compared. Several passivation methods were demonstrated to lead to enhanced light efficiency, reduced leakage, and improved reliability.

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition
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