Effect of native defects and laser-induced defects on multi-shot laser-induced damage in multilayer mirrors

2011 ◽  
Vol 9 (9) ◽  
pp. 093102-93105 ◽  
Author(s):  
王营 Ying Wang ◽  
赵元安 Yuanan Zhao ◽  
邵建达 Jianda Shao ◽  
范正修 Zhengxiu Fan
Keyword(s):  
Multilayer Mirrors ◽  
Native Defects ◽  
Laser Induced Damage ◽  
Induced Defects

scholarly journals Laser-Induced Point Defects in Fused Silica Irradiated by UV Laser in Vacuum

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Xiaoyan Zhou ◽  
Xinda Zhou ◽  
Jin Huang ◽  
Qiang Cheng ◽  
Fengrui Wang ◽  
...  
Keyword(s):  
Point Defects ◽  
Fluorescence Spectra ◽  
Uv Spectroscopy ◽  
Damage Threshold ◽  
Laser Pulses ◽  
Fused Silica ◽  
Third Harmonic ◽  
Structural Modifications ◽  
Laser Induced Damage ◽  
Induced Defects

High-purity fused silica irradiated by third harmonic of the Nd:YAG laser in vacuum with different laser pulse parameters was studied experimentally. Laser-induced defects are investigated by UV spectroscopy, and fluorescence spectra and correlated to the structural modifications in the glass matrix through Raman spectroscopy. Results show that, for laser fluence below laser-induced damage threshold (LIDT), the absorbance and intensity of fluorescence bands increase with laser energies and/or number of laser pulses, which indicates that laser-induced defects are enhanced by laser energies and/or number of laser pulses in vacuum. The optical properties of these point defects were discussed in detail.

Dual-wavelength investigation of laser-induced damage in multilayer mirrors at 532 and 1064nm

2012 ◽  
Vol 285 (12) ◽  
pp. 2889-2896 ◽  
Author(s):  
Lei Yan ◽  
Chaoyang Wei ◽  
Dawei Li ◽  
Kui Yi ◽  
Zhengxiu Fan
Keyword(s):  
Dual Wavelength ◽  
Multilayer Mirrors ◽  
Laser Induced Damage

Nanosecond laser-induced damage of nodular defects in dielectric multilayer mirrors [Invited]

2013 ◽  
Vol 53 (4) ◽  
pp. A62 ◽  
Author(s):  
Xinbin Cheng ◽  
Abudusalamu Tuniyazi ◽  
Jinlong Zhang ◽  
Tao Ding ◽  
Hongfei Jiao ◽  
...  
Keyword(s):  
Nanosecond Laser ◽  
Multilayer Mirrors ◽  
Laser Induced Damage ◽  
Dielectric Multilayer

Annealing effects on microstructure and laser-induced damage threshold of HfO_2/SiO_2 multilayer mirrors

2016 ◽  
Vol 55 (22) ◽  
pp. 6108 ◽  
Author(s):  
Shuvendu Jena ◽  
Raj Bahadur Tokas ◽  
K. Divakar Rao ◽  
Sudhakar Thakur ◽  
Naba Kishore Sahoo
Keyword(s):  
Damage Threshold ◽  
Multilayer Mirrors ◽  
Annealing Effects ◽  
Laser Induced Damage

scholarly journals Effect of multiple wavelengths combination on laser-induced damage in multilayer mirrors

2009 ◽  
Vol 17 (22) ◽  
pp. 20313 ◽  
Author(s):  
Ming Zhou ◽  
Jianda Shao ◽  
Zhengxiu Fan ◽  
Yuan-An Zhao ◽  
Dawei Li
Keyword(s):  
Multilayer Mirrors ◽  
Multiple Wavelengths ◽  
Laser Induced Damage

Vacancy-Type Defects in GaN for Power Devices Probed by Positron Annihilation

2017 ◽  
Vol 373 ◽  
pp. 183-188
Author(s):  
Akira Uedono ◽  
Shoji Ishibashi ◽  
Nagayasu Oshima ◽  
Ryoichi Suzuki
Keyword(s):  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Annihilation Radiation ◽  
Power Devices ◽  
Native Defects ◽  
Si Substrates ◽  
Induced Defects ◽  
Doppler Broadening Spectra ◽  
Defect Species ◽  
Major Defect

Native defects and ion-implantation induced defects in GaN were studied by means of positron annihilation. Measurements of Doppler broadening spectra of the annihilation radiation for GaN layers grown on Si substrates showed that optically active vacancy-type defects were formed in the layers. Charge transition of the defects due to electron capture occurred when the layers were irradiated by photons with energy above 2.7 eV. It was found that Ti deposition and subsequent annealing introduced vacancy clusters. We also characterized vacancy-type defects in Mg-implanted GaN. The major defect species of vacancies introduced by Mg-implantation was a complex between Ga-vacancy (VGa) and nitrogen vacancies (VNs). After annealing above 1000C, these defects started to agglomerate, and the major defect species became (VGa)2 coupled with VNs. Through this work, we have demonstrated that positron annihilation spectroscopy is a powerful tool for characterizing vacancy-type defects in GaN for power devices applications.

Sign in / Sign up

Export Citation Format

Share Document