Poly‐Si active matrix organic light‐emitting diode pixel circuit with compensation for threshold voltage and mobility variations

2014 ◽  
Vol 50 (13) ◽  
pp. 934-935 ◽  
Author(s):  
Ilku Nam ◽  
Doo Hyung Woo
2018 ◽  
Vol 27 (14) ◽  
pp. 1850221
Author(s):  
Zunkai Huang ◽  
Li Tian ◽  
Hui Wang ◽  
Songlin Feng

In this paper, we propose a novel voltage-programmed pixel circuit with polysilicon thin–flim transistors (poly-Si TFTs) for active matrix organic light-emitting diode (AMOLED) displays, which consists of one programming transistor, one driving transistor, four switching transistors and two storage capacitors, respectively. Specifically, the proposed pixel circuit is able to not only efficiently compensate for the threshold variations of TFTs, but also largely suppresses the electrical degradations of the devices caused by the long-term electrical stress. Moreover, the mobility variation of the driving transistor can be compensated as well. The simulation has been performed by HSPICE, and results indicate that the average values of nonuniformities are, respectively, 7.3% as the threshold-voltage varies by [Formula: see text][Formula: see text]V and 2.1%, as the mobility of the driving transistor varies by [Formula: see text]%, both of which are much lower than that of the conventional two-transistor and one-capacitor (2T1C) pixel. Furthermore, since the OLED is reverse-biased during the nonemission phases, the lifetime of OLED will be extended naturally. As a consequence, the proposed pixel circuit can substantially improve the display performance.


2007 ◽  
Vol 15 (8) ◽  
pp. 541 ◽  
Author(s):  
Sang-Hoon Jung ◽  
Hong-Koo Lee ◽  
Tae-Joon Ahn ◽  
Chang-Yeon Kim ◽  
Chang-Dong Kim ◽  
...  

2013 ◽  
Vol 28 (3) ◽  
pp. 386-391
Author(s):  
周雷 ZHOU Lei ◽  
张立荣 ZHANG Li-rong ◽  
宋小锋 SONG Xiao-feng ◽  
吴为敬 WU Wei-jing ◽  
姚若河 YAO Ruo-he

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