scholarly journals Chemical bath deposition of textured and compact zinc oxide thin films on vinyl-terminated polystyrene brushes

2016 ◽  
Vol 7 ◽  
pp. 102-110 ◽  
Author(s):  
Nina J Blumenstein ◽  
Caroline G Hofmeister ◽  
Peter Lindemann ◽  
Cheng Huang ◽  
Johannes Baier ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Polymer Brush ◽  
Oriented Attachment ◽  
Zno Films ◽  
Island Growth ◽  
Force Microscopy ◽  
Angle Measurements ◽  
Atomic Force ◽  
Before And After

In this study we investigated the influence of an organic polystyrene brush on the deposition of ZnO thin films under moderate conditions. On a non-modified SiO x surface, island growth is observed, whereas the polymer brush induces homogeneous film growth. A chemical modification of the polystyrene brushes during the mineralization process occurs, which enables stronger interaction between the then polar template and polar ZnO crystallites in solution. This may lead to oriented attachment of the crystallites so that the observed (002) texture arises. Characterization of the templates and the resulting ZnO films were performed with ζ-potential and contact angle measurements as well as scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). Infrared spectroscopy (IR) measurements were used to investigate the polystyrene brushes before and after modification.

scholarly journals Highly c-axis Oriented ZnO Thin Films by Sol-gel Method

2021 ◽  
Author(s):  
Taner Kutlu ◽  
Necdet H. Erdogan ◽  
Nazmi Sedefoglu ◽  
Hamide Kavak
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Optical Measurement ◽  
Sol Gel ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After ◽  
Coating Method

Abstract This study reports the effect of annealing temperature on the structural, morphological, and optical properties of ZnO (Zinc Oxide) thin films deposited on a glass substrate by the sol-gel spin coating method. Those properties of ZnO were examined with UV-Vis, Fourier transform infrared (FTIR) and Raman spectroscopy, Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), and X-ray diffraction (XRD), before and after annealing. XRD results revealed that all the samples had a highly c-axis oriented wurtzite structure. A 1 (LO) mode in Raman spectra also confirmed the highly oriented ZnO films. Optical measurement indicated that transmittance of the films was above %85, and the optical band gap slightly decreased with the increasing annealing temperature from 350 to 550 °C. Morphological analysis displayed that increasing annealing temperature improved surface morphology and enlarged the grain size from 2-3 nm for as-deposited samples to 150 nm for annealed at 550 °C.

scholarly journals Influence of Substrate Materials on Nucleation and Properties of Iridium Thin Films Grown by ALD

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 173
Author(s):  
Paul Schmitt ◽  
Vivek Beladiya ◽  
Nadja Felde ◽  
Pallabi Paul ◽  
Felix Otto ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Bulk Material ◽  
Atomic Layer ◽  
Substrate Material ◽  
Fused Silica ◽  
Silicon Wafers ◽  
Force Microscopy ◽  
Angle Measurements ◽  
Influence Of Substrate

Ultra-thin metallic films are widely applied in optics and microelectronics. However, their properties differ significantly from the bulk material and depend on the substrate material. The nucleation, film growth, and layer properties of atomic layer deposited (ALD) iridium thin films are evaluated on silicon wafers, BK7, fused silica, SiO2, TiO2, Ta2O5, Al2O3, HfO2, Ru, Cr, Mo, and graphite to understand the influence of various substrate materials. This comprehensive study was carried out using scanning electron and atomic force microscopy, X-ray reflectivity and diffraction, four-point probe resistivity and contact angle measurements, tape tests, and Auger electron spectroscopy. Within few ALD cycles, iridium islands occur on all substrates. Nevertheless, their size, shape, and distribution depend on the substrate. Ultra-thin (almost) closed Ir layers grow on a Ta2O5 seed layer after 100 cycles corresponding to about 5 nm film thickness. In contrast, the growth on Al2O3 and HfO2 is strongly inhibited. The iridium growth on silicon wafers is overall linear. On BK7, fused silica, SiO2, TiO2, Ta2O5, Ru, Cr, and graphite, three different growth regimes are distinguishable. The surface free energy of the substrates correlates with their iridium nucleation delay. Our work, therefore, demonstrates that substrates can significantly tailor the properties of ultra-thin films.

scholarly journals The Physicochemical and Antibacterial Properties of Chitosan-Based Materials Modified with Phenolic Acids Irradiated by UVC Light

2021 ◽  
Vol 22 (12) ◽  
pp. 6472
Author(s):  
Beata Kaczmarek-Szczepańska ◽  
Marcin Wekwejt ◽  
Olha Mazur ◽  
Lidia Zasada ◽  
Anna Pałubicka ◽  
...  
Keyword(s):  
Thin Films ◽  
Antimicrobial Activity ◽  
Ferulic Acid ◽  
Phenolic Acid ◽  
Food Packaging ◽  
Antibacterial Properties ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After

This paper concerns the physicochemical properties of chitosan/phenolic acid thin films irradiated by ultraviolet radiation with wavelengths between 200 and 290 nm (UVC) light. We investigated the preparation and characterization of thin films based on chitosan (CTS) with tannic (TA), caffeic (CA) and ferulic acid (FA) addition as potential food-packaging materials. Such materials were then exposed to the UVC light (254 nm) for 1 and 2 h to perform the sterilization process. Different properties of thin films before and after irradiation were determined by various methods such as Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), atomic force microscopy (AFM), differential scanning calorimeter (DSC), mechanical properties and by the surface free energy determination. Moreover, the antimicrobial activity of the films and their potential to reduce the risk of contamination was assessed. The results showed that the phenolic acid improving properties of chitosan-based films, short UVC radiation may be used as sterilization method for those films, and also that the addition of ferulic acid obtains effective antimicrobial activity, which have great benefit for food packing applications.

YBCO film growth on ultrathin Ag layers

1994 ◽  
Vol 9 (11) ◽  
pp. 2761-2763 ◽  
Author(s):  
C. Zhong ◽  
S.T. Ruggiero ◽  
R. Fletcher ◽  
E. Moser
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Film Growth ◽  
Ybco Film ◽  
Critical Currents ◽  
Complete Coverage ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sputter Deposited ◽  
Marked Tendency

We discuss our results on the growth of YBCO thin films on ultrathin (1-10 nm) Ag underlayers. Substrates were LaAlO3. YBCO was sputter deposited and Ag thermally evaporated. It was observed that Tc remained relatively unaffected by the Ag underlayers, ranging from 86-88 K. Critical currents were found to be consistent with YBCO grown on bulk Ag when the Ag underlayer film reached complete coverage (∼9 nm). Films grown on Ag showed a marked tendency for microcrystalline growth on the basis of atomic-force microscopy (AFM) results.

Improvement of Hydrophilic Stability of Diamond-Like Carbon Films by O2/CF4 Plasma Post-Treatment

2015 ◽  
Vol 1125 ◽  
pp. 38-44
Author(s):  
Chavin Jongwannasiri ◽  
Shuichi Watanabe
Keyword(s):  
Carbon Films ◽  
Post Treatment ◽  
Attenuated Total Reflectance ◽  
Diamond Like Carbon ◽  
Total Reflectance ◽  
Force Microscopy ◽  
Angle Measurements ◽  
Atomic Force ◽  
Contact Angle Measurements ◽  
Before And After

In this article, the results obtained from a study carried out on the plasma post-treatment of diamond-like carbon (DLC) films using an oxygen/tetrafluoromethane (O2/CF4) gas mixture is reported. The surface morphology and chemical bonding of the films before and after the plasma post-treatment were characterized using atomic force microscopy (AFM) and attenuated total reflectance-Fourier transform infrared (ATR-FTIR) spectroscopy. The effect of adding CF4 to the O2 plasma on the wettability of the films was also examined using contact angle measurements. The results indicate that the surface roughness increased with the addition of CF4 to the O2 plasma, whereas oxygen-and fluorinated-based functional groups were generated on the surface of the DLC films submitted to O2/CF4 plasma post-treatment. The surface energy also decreased with increasing CF4 fraction, causing the surface of the films to be hydrophobic. Furthermore, the films containing 20% CF4 exhibited higher hydrophilic stability than the others. Thus, the addition of a small amount of CF4 to O2 plasma can be considered beneficial in improving the hydrophilic stability of surface of DLC films.

AFM Study of Magnetron Sputtered Nickel Films Coated on Cenosphere Particles

2015 ◽  
Vol 713-715 ◽  
pp. 2585-2589
Author(s):  
Xiao Zheng Yu
Keyword(s):  
Deposition Time ◽  
Film Growth ◽  
Three Dimensional ◽  
Island Growth ◽  
Nickel Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sputtering Power ◽  
Shadowing Effect ◽  
Smooth Film

The morphologies of nanocrystalline nickel film coated on cenosphere particles using magnetron sputtering method were investigated by atomic force microscopy (AFM). The AFM results show the grain sizes and root-mean-square (RMS) roughness values of nickel films increase with the increase of sputtering power or deposition time and the nickel films growth is a three-dimensional island growth mode. The unceasingly variational angular distribution can get rid of the physical shadowing effect of the sputtering and promote a rather smooth film growth. Due to the all-around effect, the final distribution of grains shows a rather smooth morphology with low roughness.

Deposition mechanism of nanostructured thin films from tetrafluoroethylene glow discharges

2005 ◽  
Vol 77 (2) ◽  
pp. 399-414 ◽  
Author(s):  
A. Milella ◽  
F. Palumbo ◽  
P. Favia ◽  
G. Cicala ◽  
R. d’Agostino
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Water Repellency ◽  
High Water ◽  
Experimental Conditions ◽  
Deposition Mechanism ◽  
Force Microscopy ◽  
Glow Discharges ◽  
Atomic Force ◽  
Surface Migration

Nanostructured polytetrafluoroethylene (PTFE)-like thin films can be deposited, in certain experimental conditions, by modulated discharges fed with tetrafluoroethylene (TFE). These coatings are characterized by a unique morphology consisting of highly twisted micron-long ribbons, which leads to an extremely high water repellency of the surface. In the present work, the diagnostics of the plasma phase is presented, coupled with that of the coating, in order to understand the film growth mechanism in different discharge regimes. When the duty cycle (DC) is increased in modulated C2F4 plasmas, the monomer depletion increases, too, and many recombination reactions take place at progressively higher rates, resulting in the formation of CF4, C2F6, C3F6, C3F8, and C4F10; the formation of powders in the homogeneous phase, however, was never evidenced. The modulation of C2F4 plasmas strongly affects the morphology of the resulting coating, as revealed by atomic force microscopy (AFM), ranging from bumpy to ribbon-like structures. The latter, moreover, are found to be more PTFE-like with respect to the remaining part of the film. In the last part of the paper, a deposition mechanism is proposed, where low radical densities in the plasma and surface migration of the precursors are the keys for the growth of ribbon-like structures.

The Effects of Kcn Etching on Cu-Rich Epitaxial CuInSe2 Thin Films

1996 ◽  
Vol 426 ◽  
Author(s):  
P. Fons ◽  
S. Nikl ◽  
A. Yamada ◽  
M. Nishitanp ◽  
T. Wada ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Region ◽  
Etching Time ◽  
Cation Sublattice ◽  
Epitaxial Thin Films ◽  
Near Surface ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After ◽  
Integrated Intensity

AbstractA series of Cu-rich CuInSe2 epitaxial thin films were grown by molecular beam epitaxy on GaAs(001) substrates from elemental sources at a growth temperature of 450 °C. All samples were grown with an excess of Cu. Electron microprobe analysis (EPMA) indicated a Cu/ In ratio of about 2.1–2.6 in the as-grown films. Additionally, the Se/ (In+Cu) ratio was observed to be ∼0.95 indicating that the films were slightly Se poor. These Cu-rich samples were etched in a KCN solution for periods ranging from 30 seconds to 3 minutes. EPMA measurements indicated that the bulk Cu/ In ratio was reduced to ∼0.92 in all films regardless of etching time. Atomic force microscopy (AFM) was used to characterize the topology of each sample before and after etching. These measurements indicated that the precipitates present on the as-grown films were removed and large nearly isotropic holes were etched into the sample to a depth of over 1000 Å even for etching times as short as 30 seconds. The samples were also evaluated both before and after etching using a Phillips MRD diffractometer with parallel beam optics and a 18,000 watt Cu rotating anode X-ray source in the chalcopyrite [001], [101], and [112] directions. A peak was observed at ∼15 degrees in the [001] scan after etching consistant with the presence of the ordered vacancy compound, CuIn3Se5. Additionally the integrated intensity ratios of the chalcopyrite (202) reflection to the chalcopyrite (101) reflection ∝(fCu-fIn)2 along the [101] direction indicated the presence of a near-surface region containing cation sublattice disorder that was subsequently removed by the etching process.

scholarly journals Understanding the effect of thickness on the thermoelectric properties of Ca3Co4O9 thin films

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yinong Yin ◽  
Ashutosh Tiwari
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Power Factor ◽  
Functional Dependence ◽  
Island Growth ◽  
Force Microscopy ◽  
Atomic Force ◽  
Power Measurements ◽  
Single Crystal Sapphire

AbstractWe are reporting the effect of thickness on the Seebeck coefficient, electrical conductivity and power factor of Ca3Co4O9 thin films grown on single-crystal Sapphire (0001) substrate. Pulsed laser deposition (PLD) technique was employed to deposit Ca3Co4O9 films with precisely controlled thickness values ranging from 15 to 75 nm. Structural characterization performed by scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed that the growth of Ca3Co4O9 on Sapphire (0001) follows the island growth-mode. It was observed that in-plane grain sizes decrease from 126 to 31 nm as the thickness of the films decreases from 75 to 15 nm. The thermoelectric power measurements showed an overall increase in the value of the Seebeck coefficient as the films’ thickness decreased. The above increase in the Seebeck coefficient was accompanied with a simultaneous decrease in the electrical conductivity of the thinner films due to enhanced scattering of the charge carriers at the grain boundaries. Because of the competing mechanisms of the thickness dependence of Seebeck coefficient and electrical conductivity, the power factor of the films showed a non-monotonous functional dependence on thickness. The films with the intermediate thickness (60 nm) showed the highest power factor (~ 0.27 mW/m-K2 at 720 K).

On the Properties of Yttria-Stabilized Zirconia Thin Films Prepared by Sol-Gel Method

1970 ◽  
Vol 17 (2) ◽  
pp. 191-196
Author(s):  
Artūras ŽALGA ◽  
Brigita ABAKEVIČIENĖ ◽  
Aleksej ŽARKOV ◽  
Aldona BEGANSKIENĖ ◽  
Aivaras KAREIVA ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Angle Measurements ◽  
Atomic Force ◽  
Contact Angle Measurements ◽  
Dip Coating Technique

The synthesis of nanostructured films of 20 mol% Y2O3 stabilized ZrO2 on corundum (Al2O3) substrates was performed from different sols using dip-coating technique. All obtained samples were repeatedly annealed at 800 °C temperature after each dipping procedure and fully characterized by X-ray diffraction (XRD) analysis. XRD data exhibited that at 800 °C temperature nano-sized Y0.2Zr0.8O2 thin films with cubic (Fm-3m) crystal structure have been formed. The morphological features of obtained coatings were investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The surface tension and hydrophility of the synthesized films were determined by contact angle measurements (CAM).http://dx.doi.org/10.5755/j01.ms.17.2.491

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