scholarly journals Directed deposition of silicon nanowires using neopentasilane as precursor and gold as catalyst

2012 ◽  
Vol 3 ◽  
pp. 535-545 ◽  
Author(s):  
Britta Kämpken ◽  
Verena Wulf ◽  
Norbert Auner ◽  
Marcel Winhold ◽  
Michael Huth ◽  
...  
Keyword(s):  
Thin Film ◽  
Gold Nanoparticles ◽  
Uv Irradiation ◽  
Silicon Nanowires ◽  
Gold Films ◽  
Si Nanowires ◽  
Silicon Alloy ◽  
Liquid Gold ◽  
Different Sources

In this work the applicability of neopentasilane (Si(SiH3)4) as a precursor for the formation of silicon nanowires by using gold nanoparticles as a catalyst has been explored. The growth proceeds via the formation of liquid gold/silicon alloy droplets, which excrete the silicon nanowires upon continued decomposition of the precursor. This mechanism determines the diameter of the Si nanowires. Different sources for the gold nanoparticles have been tested: the spontaneous dewetting of gold films, thermally annealed gold films, deposition of preformed gold nanoparticles, and the use of “liquid bright gold”, a material historically used for the gilding of porcelain and glass. The latter does not only form gold nanoparticles when deposited as a thin film and thermally annealed, but can also be patterned by using UV irradiation, providing access to laterally structured layers of silicon nanowires.

Morphological evolution of gold nanoparticles on silicon nanowires and their plasmonics

RSC Advances ◽  
2015 ◽  
Vol 5 (61) ◽  
pp. 49708-49718 ◽  
Author(s):  
Yuan Li ◽  
Wenwu Shi ◽  
Aditya Gupta ◽  
Nitin Chopra
Keyword(s):  
Gold Nanoparticles ◽  
Raman Spectroscopy ◽  
Silicon Nanowires ◽  
Au Nanoparticles ◽  
Morphological Evolution ◽  
Surface Enhanced Raman Spectroscopy ◽  
Si Nanowires ◽  
One Dimensional ◽  
Surface Enhanced ◽  
Surface Enhanced Raman

One-dimensional heterostructures composed of silicon (Si) nanowires and uniformly decorated with gold (Au) nanoparticles were fabricated and used as a substrate for organic detection based on the surface-enhanced Raman spectroscopy.

Surface plasmon enhanced photoluminescence from porous silicon nanowires decorated with gold nanoparticles

RSC Advances ◽  
2016 ◽  
Vol 6 (64) ◽  
pp. 59395-59399 ◽  
Author(s):  
Haiping Tang ◽  
Chao Liu ◽  
Haiping He
Keyword(s):  
Gold Nanoparticles ◽  
Porous Silicon ◽  
Surface Plasmon ◽  
Silicon Nanowires ◽  
Au Nanoparticles ◽  
Porous Si ◽  
Si Nanowires ◽  
Enhanced Photoluminescence ◽  
Porous Silicon Nanowires ◽  
Photoluminescence Enhancement

About 8-fold photoluminescence enhancement is realized in porous Si nanowires via coupling with the surface plasmon of Au nanoparticles.

On the role of tin underlays for the prevention of thermal grooving in thin gold films

1986 ◽  
Vol 44 ◽  
pp. 732-733
Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff
Keyword(s):  
Thin Film ◽  
Free Surface ◽  
Grain Boundary ◽  
Beneficial Effect ◽  
Failure Mechanism ◽  
Failure Mechanisms ◽  
Distinct Advantage ◽  
Gold Films ◽  
Gold Thin Film

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.

scholarly journals Deep-Ultraviolet Transparent Conductive MWCNT/SiO2 Composite Thin Film Fabricated by UV Irradiation at Ambient Temperature onto Spin-Coated Molecular Precursor Film

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1348
Author(s):  
Hiroki Nagai ◽  
Naoki Ogawa ◽  
Mitsunobu Sato
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Heat Treatment ◽  
Uv Irradiation ◽  
Composite Thin Film ◽  
Precursor Film ◽  
Mixed Solution ◽  
Pencil Hardness ◽  
Strong Base ◽  
Deep Ultraviolet

Deep-ultraviolet (DUV) light-transparent conductive composite thin films, consisting of dispersed multiwalled carbon nanotubes (MWCNTs) and SiO2 matrix composites, were fabricated on a quartz glass substrate. Transparent and well-adhered amorphous thin films, with a thickness of 220 nm, were obtained by weak ultraviolet (UV) irradiation (4 mW cm−2 at 254 nm) for more than 6 h at 20−40 °C onto the precursor films, which were obtained by spin coating with a mixed solution of MWCNT in water and Si(IV) complex in ethanol. The electrical resistivity of MWCNT/SiO2 composite thin film is 0.7 Ω·cm, and transmittance in the wavelength region from DUV to visible light is higher than 80%. The MWCNT/SiO2 composite thin film showed scratch resistance at pencil hardness of 8H. Importantly, the resistivity of the MWCNT/SiO2 composite thin film was maintained at the original level even after heat treatment at 500 °C for 1 h. It was observed that the heat treatment of the composite thin film improved durability against both aqueous solutions involving a strong acid (HCl) and a strong base (NaOH).

scholarly journals Data from crosslinked PS honeycomb thin film by deep UV irradiation

Data in Brief ◽  
2015 ◽  
Vol 5 ◽  
pp. 990-994 ◽  
Author(s):  
Van-Tien Bui ◽  
Hwa Su Lee ◽  
Jae-Hak Choi ◽  
Ho-Suk Choi
Keyword(s):  
Thin Film ◽  
Uv Irradiation ◽  
Deep Uv

Size-Dependent Elasticity of Silicon Nanowires

2009 ◽  
Vol 60-61 ◽  
pp. 315-319 ◽  
Author(s):  
W.W. Zhang ◽  
Qing An Huang ◽  
H. Yu ◽  
L.B. Lu
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Silicon Nanowires ◽  
First Principles ◽  
Si Nanowires ◽  
Size Dependent ◽  
Reconstructed Surfaces ◽  
Strain Relationship ◽  
Dynamics Simulations ◽  
Good Agreement

Molecular dynamics simulations are carried out to characterize the mechanical properties of [001] and [110] oriented silicon nanowires, with the thickness ranging from 1.05nm to 3.24 nm. The nanowires are taken to have ideal surfaces and (2×1) reconstructed surfaces, respectively. A series of simulations for square cross-section Si nanowires have been performed and Young’s modulus is calculated from energy–strain relationship. The results show that the elasticity of Si nanowires is strongly depended on size and surface reconstruction. Furthermore, the physical origin of above results is analyzed, consistent with the bond loss and saturation concept. The results obtained from the molecular dynamics simulations are in good agreement with the values of first-principles. The molecular dynamics simulations combine the accuracy and efficiency.

Bottom-up nanoscale patterning and selective deposition on silicon nanowires

2021 ◽  
Author(s):  
Amar Mohabir ◽  
Daniel Aziz ◽  
Amy Brummer ◽  
Kathleen Taylor ◽  
Eric Vogel ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Electronic Devices ◽  
Spatial Relationship ◽  
Atomic Layer ◽  
Semiconductor Nanowires ◽  
Si Nanowires ◽  
Bottom Up ◽  
Nanoscale Patterning ◽  
Layer Deposition ◽  
Dopant Profile

Abstract We demonstrate a bottom-up process for programming the deposition of coaxial thin films aligned to the underlying dopant profile of semiconductor nanowires. Our process synergistically combines three distinct methods – vapor-liquid-solid (VLS) nanowire growth, selective coaxial lithography via etching of surfaces (SCALES), and area-selective atomic layer deposition (AS-ALD) – into a cohesive whole. Here, we study ZrO2 on Si nanowires as a model system. Si nanowires are first grown with an axially modulated n-Si/i-Si dopant profile. SCALES then yields coaxial poly(methyl methacrylate) (PMMA) masks on the n-Si regions. Subsequent AS-ALD of ZrO2 occurs on the exposed i-Si regions and not on those masked by PMMA. We show the spatial relationship between nanowire dopant profile, PMMA masks, and ZrO2 films, confirming the programmability of the process. The nanoscale resolution of our process coupled with the plethora of available AS-ALD chemistries promises a range of future opportunities to generate structurally complex nanoscale materials and electronic devices using entirely bottom-up methods.

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