scholarly journals Peculiarities in optical response of hybrid-barrier GaSb/InAs/AlSb resonant tunneling diode structure

2021 ◽  
Vol 51 (2) ◽  
Author(s):  
M. Dyksik ◽  
M. Motyka ◽  
M. Rygała ◽  
A. Pfenning ◽  
F. Hartmann ◽  
...  
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Quantum Wells ◽  
Resonant Tunneling ◽  
Type Ii ◽  
Optical Transitions ◽  
Comprehensive Investigation ◽  
Tunneling Diode ◽  
Band Structure Calculations ◽  
Structure Calculations

We present comprehensive investigation of the optical properties of hybrid-barrier GaSb-based resonant tunneling structures, containing a bulk-like GaInAsSb absorption layer and two asymmetric type II GaSb/InAs/AlSb quantum wells. Methods of optical spectroscopy by means of Fourier-transformed photoluminescence and photoreflectance are employed to probe optical transitions in this complex multilayer system. Based on the comparison between the absorption-like and emission-like spectra (also in function of temperature) confronted with band structure calculations four main transitions could be resolved and identified. For one of them, there has been observed unusually strong linear polarization dependence never reported in structures of that kind. It has been interpreted as related to a transition at the GaSb/GaInAsSb interface, for which various scenarios causing the polarization selectivity are discussed.

Stacking Faults and 3C Quantum Wells in Hexagonal SiC Polytypes

2006 ◽  
Vol 527-529 ◽  
pp. 351-354 ◽  
Author(s):  
M.S. Miao ◽  
Walter R.L. Lambrecht
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
First Principles ◽  
Driving Force ◽  
Stacking Faults ◽  
Band Gaps ◽  
Partial Dislocations ◽  
Band Structure Calculations ◽  
Thermodynamic Driving Force ◽  
Structure Calculations

The electronic driving force for growth of stacking faults (SF) in n-type 4H SiC under annealing and in operating devices is discussed. This involves two separate aspects: an overall thermodynamic driving force due to the capture of electrons in interface states and the barriers that need to be overcome to create dislocation kinks which advance the motion of partial dislocations and hence expansion of SF. The second problem studied in this paper is whether 3C SiC quantum wells in 4H SiC can have band gaps lower than 3C SiC. First-principles band structure calculations show that this is not the case due to the intrinsic screening of the spontaneous polarization fields.

Investigation on crystal structures, optical properties, and band structure calculations of In2-xMxTeO6 (M = Ga, Bi, La)

2017 ◽  
Vol 702 ◽  
pp. 601-610
Author(s):  
Arreerat Jiamprasertboon ◽  
Thanundon Kongnok ◽  
Sirichok Jungthawan ◽  
Pinit Kidkhunthod ◽  
Narong Chanlek ◽  
...  
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Crystal Structures ◽  
Band Structure Calculations ◽  
Structure Calculations

Energy spectrum and structure of thin pseudomorphic InAs quantum wells in an AlAs matrix: Photoluminescence spectra and band-structure calculations

2007 ◽  
Vol 76 (15) ◽  
Author(s):  
Timur S. Shamirzaev ◽  
Alexanser M. Gilinsky ◽  
Alexanser K. Kalagin ◽  
Alexey V. Nenashev ◽  
Konstantin S. Zhuravlev
Keyword(s):  
Energy Spectrum ◽  
Band Structure ◽  
Quantum Wells ◽  
Photoluminescence Spectra ◽  
Band Structure Calculations ◽  
Structure Calculations

PHYSICAL PROPERTIES OF AuAl2, AuGa2, AuIn2, AND PtGa2

1994 ◽  
Vol 08 (21n22) ◽  
pp. 1297-1318 ◽  
Author(s):  
LI-SHING HSU
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Band Structure ◽  
Physical Properties ◽  
Fermi Level ◽  
Density Of States ◽  
Band Structure Calculations ◽  
Structure Calculations ◽  
Film Form

The structural, electronic, magnetic, and optical properties of AuAl 2, AuGa 2, AuIn 2, and PtGa2 are reviewed. These experimental results are compared with the values of the density of states at the Fermi level derived from band-structure calculations. The so-called “ AuGa 2 dilemma” and the controversial positions of the Au 5d bands in AuAl 2, AuGa 2, and AuIn 2 are discussed. The physical properties of PtGa 2 are summarized and compared with those of the Au intermetallic compounds. Recent researches on the growth and characterization of these compounds in thin-film form are also presented.

Optical Properties of C60 and M6C60 (M=K, Rb, Cs) films

1992 ◽  
Vol 247 ◽  
Author(s):  
S. L. Ren ◽  
Ying Wang ◽  
M. Holden ◽  
A. M. Rao ◽  
F. Ni ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Structure ◽  
Photoelectron Spectroscopy ◽  
Normal Incidence ◽  
X Ray ◽  
Band Structure Calculations ◽  
Electron Energy Loss ◽  
Homo Lumo ◽  
Structure Calculations

ABSTRACTWe report the optical properties of C60 determined from the variable angle ellipsometry and near normal incidence reflection / transmission (R.T) experiments, and of M6C60 from the R, T experiments. The measurements were performed on thin films (d∼1000 Å) of C60 and M6C60 deposited on both Si(100) and suprasil substrates. The onset for strong absorption across the HOMO-LUMO gap in CgQ is measured to be -2.3 eV, slightly larger than the gap values obtained from the x-ray photoelectron spectroscopy (XPS) and electron-energy-loss spectroscopy (EELS) experiments. The observed peak positions in ε2(ω) for M6C60 and C60 compares well with the recent band structure calculations and suggests that the M6C60 compounds exhibit only a weak hybridization between the C60 and M states.

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