Band structure calculations of InP wurtzite/zinc-blende quantum wells

2012 ◽  
Vol 112 (10) ◽  
pp. 103716 ◽  
Author(s):  
P. E. Faria Junior ◽  
G. M. Sipahi
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Zinc Blende ◽  
Band Structure Calculations ◽  
Structure Calculations

Stacking Faults and 3C Quantum Wells in Hexagonal SiC Polytypes

2006 ◽  
Vol 527-529 ◽  
pp. 351-354 ◽  
Author(s):  
M.S. Miao ◽  
Walter R.L. Lambrecht
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
First Principles ◽  
Driving Force ◽  
Stacking Faults ◽  
Band Gaps ◽  
Partial Dislocations ◽  
Band Structure Calculations ◽  
Thermodynamic Driving Force ◽  
Structure Calculations

The electronic driving force for growth of stacking faults (SF) in n-type 4H SiC under annealing and in operating devices is discussed. This involves two separate aspects: an overall thermodynamic driving force due to the capture of electrons in interface states and the barriers that need to be overcome to create dislocation kinks which advance the motion of partial dislocations and hence expansion of SF. The second problem studied in this paper is whether 3C SiC quantum wells in 4H SiC can have band gaps lower than 3C SiC. First-principles band structure calculations show that this is not the case due to the intrinsic screening of the spontaneous polarization fields.

Energy spectrum and structure of thin pseudomorphic InAs quantum wells in an AlAs matrix: Photoluminescence spectra and band-structure calculations

2007 ◽  
Vol 76 (15) ◽  
Author(s):  
Timur S. Shamirzaev ◽  
Alexanser M. Gilinsky ◽  
Alexanser K. Kalagin ◽  
Alexey V. Nenashev ◽  
Konstantin S. Zhuravlev
Keyword(s):  
Energy Spectrum ◽  
Band Structure ◽  
Quantum Wells ◽  
Photoluminescence Spectra ◽  
Band Structure Calculations ◽  
Structure Calculations

scholarly journals Peculiarities in optical response of hybrid-barrier GaSb/InAs/AlSb resonant tunneling diode structure

2021 ◽  
Vol 51 (2) ◽  
Author(s):  
M. Dyksik ◽  
M. Motyka ◽  
M. Rygała ◽  
A. Pfenning ◽  
F. Hartmann ◽  
...  
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Quantum Wells ◽  
Resonant Tunneling ◽  
Type Ii ◽  
Optical Transitions ◽  
Comprehensive Investigation ◽  
Tunneling Diode ◽  
Band Structure Calculations ◽  
Structure Calculations

We present comprehensive investigation of the optical properties of hybrid-barrier GaSb-based resonant tunneling structures, containing a bulk-like GaInAsSb absorption layer and two asymmetric type II GaSb/InAs/AlSb quantum wells. Methods of optical spectroscopy by means of Fourier-transformed photoluminescence and photoreflectance are employed to probe optical transitions in this complex multilayer system. Based on the comparison between the absorption-like and emission-like spectra (also in function of temperature) confronted with band structure calculations four main transitions could be resolved and identified. For one of them, there has been observed unusually strong linear polarization dependence never reported in structures of that kind. It has been interpreted as related to a transition at the GaSb/GaInAsSb interface, for which various scenarios causing the polarization selectivity are discussed.

Band structure calculations for dilute nitride quantum wells under compressive or tensile strain

2004 ◽  
Vol 16 (31) ◽  
pp. S3215-S3227 ◽  
Author(s):  
H Carrère ◽  
X Marie ◽  
J Barrau ◽  
T Amand ◽  
S Ben Bouzid ◽  
...  
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Tensile Strain ◽  
Dilute Nitride ◽  
Band Structure Calculations ◽  
Structure Calculations

scholarly journals Fermi surface of the skutterudite CoSb3 : Quantum oscillations and band-structure calculations

2021 ◽  
Vol 103 (8) ◽  
Author(s):  
M. Naumann ◽  
P. Mokhtari ◽  
Z. Medvecka ◽  
F. Arnold ◽  
M. Pillaca ◽  
...  
Keyword(s):  
Band Structure ◽  
Fermi Surface ◽  
Quantum Oscillations ◽  
Band Structure Calculations ◽  
Structure Calculations
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