scholarly journals High-Performance Mg3Sb2-xBix Thermoelectrics: Progress and Perspective

Research ◽  
2020 ◽  
Vol 2020 ◽  
pp. 1-22 ◽  
Author(s):  
Airan Li ◽  
Chenguang Fu ◽  
Xinbing Zhao ◽  
Tiejun Zhu
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Low Cost ◽  
Successful Implementation ◽  
Low Grade ◽  
Structure Property ◽  
Promising Alternative ◽  
Band Engineering ◽  
Device Applications ◽  
Boundary Modification

Since the first successful implementation of n-type doping, low-cost Mg3Sb2-xBix alloys have been rapidly developed as excellent thermoelectric materials in recent years. An average figure of merit zT above unity over the temperature range 300–700 K makes this new system become a promising alternative to the commercially used n-type Bi2Te3-xSex alloys for either refrigeration or low-grade heat power generation near room temperature. In this review, with the structure-property-application relationship as the mainline, we first discuss how the crystallographic, electronic, and phononic structures lay the foundation of the high thermoelectric performance. Then, optimization strategies, including the physical aspects of band engineering with Sb/Bi alloying and carrier scattering mechanism with grain boundary modification and the chemical aspects of Mg defects and aliovalent doping, are extensively reviewed. Mainstream directions targeting the improvement of zT near room temperature are outlined. Finally, device applications and related engineering issues are discussed. We hope this review could help to promote the understanding and future developments of low-cost Mg3Sb2-xBix alloys for practical thermoelectric applications.

scholarly journals Room-Temperature Solution-Processed 0D/1D Bilayer Electrodes for Translucent CsPbBr3 Perovskite Photovoltaics

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1489
Author(s):  
Bhaskar Parida ◽  
Saemon Yoon ◽  
Dong-Won Kang
Keyword(s):  
Solar Cells ◽  
Indium Tin Oxide ◽  
High Performance ◽  
Room Temperature ◽  
Low Cost ◽  
Perovskite Solar Cells ◽  
Ambient Air ◽  
Plasma Damage ◽  
Temperature Solution ◽  
Ito Nanoparticles

Materials and processing of transparent electrodes (TEs) are key factors to creating high-performance translucent perovskite solar cells. To date, sputtered indium tin oxide (ITO) has been a general option for a rear TE of translucent solar cells. However, it requires a rather high cost due to vacuum process and also typically causes plasma damage to the underlying layer. Therefore, we introduced TE based on ITO nanoparticles (ITO-NPs) by solution processing in ambient air without any heat treatment. As it reveals insufficient conductivity, Ag nanowires (Ag-NWs) are additionally coated. The ITO-NPs/Ag-NW (0D/1D) bilayer TE exhibits a better figure of merit than sputtered ITO. After constructing CsPbBr3 perovskite solar cells, the device with 0D/1D TE offers similar average visible transmission with the cells with sputtered ITO. More interestingly, the power conversion efficiency of 0D/1D TE device was 5.64%, which outperforms the cell (4.14%) made with sputtered-ITO. These impressive findings could open up a new pathway for the development of low-cost, translucent solar cells with quick processing under ambient air at room temperature.

Graphene-Ta2O5 Heterostructure Enabled High Performance, Deep-Ultraviolet to Mid-Infrared Photodetection

Nanoscale ◽  
2021 ◽  
Author(s):  
Vinh Ho ◽  
Yifei Wang ◽  
Michael Cooney ◽  
Nguyen Q Vinh
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Low Cost ◽  
Infrared Region ◽  
Temperature Sensitive ◽  
Mid Infrared ◽  
Significant Challenge ◽  
Deep Ultraviolet ◽  
Infrared Photodetection

Ultrafast, high sensitive, low cost photodetectors operating at room temperature sensitive from the deep-ultraviolet to mid-infrared region remain a significant challenge in optoelectronics. Achievements in traditional semiconductors using cryogenic operation...

scholarly journals III–V Nanowires: Synthesis, Property Manipulations, and Device Applications

2014 ◽  
Vol 2014 ◽  
pp. 1-14 ◽  
Author(s):  
Ming Fang ◽  
Ning Han ◽  
Fengyun Wang ◽  
Zai-xing Yang ◽  
SenPo Yip ◽  
...  
Keyword(s):  
High Performance ◽  
Low Cost ◽  
Volume Ratio ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Research Field ◽  
Synthesis Methods ◽  
Comprehensive Overview ◽  
Device Applications ◽  
Property Control

III–V semiconductor nanowire (NW) materials possess a combination of fascinating properties, including their tunable direct bandgap, high carrier mobility, excellent mechanical flexibility, and extraordinarily large surface-to-volume ratio, making them superior candidates for next generation electronics, photonics, and sensors, even possibly on flexible substrates. Understanding the synthesis, property manipulation, and device integration of these III–V NW materials is therefore crucial for their practical implementations. In this review, we present a comprehensive overview of the recent development in III–V NWs with the focus on their cost-effective synthesis, corresponding property control, and the relevant low-operating-power device applications. We will first introduce the synthesis methods and growth mechanisms of III–V NWs, emphasizing the low-cost solid-source chemical vapor deposition (SSCVD) technique, and then discuss the physical properties of III–V NWs with special attention on their dependences on several typical factors including the choice of catalysts, NW diameters, surface roughness, and surface decorations. After that, we present several different examples in the area of high-performance photovoltaics and low-power electronic circuit prototypes to further demonstrate the potential applications of these NW materials. Towards the end, we also make some remarks on the progress made and challenges remaining in the III–V NW research field.

Low-cost fabrication of WO3 films using a room temperature and low-vacuum air-spray based deposition system for inorganic electrochromic device applications

2015 ◽  
Vol 589 ◽  
pp. 412-418 ◽  
Author(s):  
Sung-Ik Park ◽  
Sooyeun Kim ◽  
Jung-Oh Choi ◽  
Ji-Hyeon Song ◽  
Minoru Taya ◽  
...  
Keyword(s):  
Room Temperature ◽  
Low Cost ◽  
Electrochromic Device ◽  
Device Applications

The Optimization of Extraction of Cordycepin from Fruiting Body of Cordyceps militaris (L.) Link

2011 ◽  
Vol 393-395 ◽  
pp. 1024-1028 ◽  
Author(s):  
Hong Zhang ◽  
Jun Wei Wang ◽  
Sheng Zhong Dong ◽  
Fang Xu Xu ◽  
Sheng Hou Wang
Keyword(s):  
Fruiting Body ◽  
High Performance ◽  
Room Temperature ◽  
Low Cost ◽  
Cordyceps Militaris ◽  
Ultrasonic Extraction ◽  
Water Extraction ◽  
Synergistic Extraction ◽  
Control Group ◽  
Low Loss

The optimization of extraction of cordycepin from fruiting body of Cordyceps militaris YCC-01 by water extraction, ethanol extraction, ultrasonic extraction, and synergistic extraction is studied in this paper. The optimal conditions, water extraction at 85°C for 2.5h plus ultrasonic extraction at 600W for 35min, were determined through high performance liquid chromatography (HPLC). The dried fruiting body of cordycepin content was 9.559 mg/g by this synergistic extraction method. The yield was 66.2% higher than the control group 85°C water extraction 2.5h and 11.3% higher than the room temperature ultrasonic extraction 35min. This method has a short extraction time, low cost, low loss of active ingredients and other characteristics with good prospects.

A novel low cost roll-to-roll manufacturing compatible ultra-thin chip integration and direct metal interconnection process for flexible hybrid electronics

2019 ◽  
Vol 2019 (NOR) ◽  
pp. 000006-000011
Author(s):  
N Palavesam ◽  
W Hell ◽  
A Drost ◽  
C Landesberger ◽  
C Kutter ◽  
...  
Keyword(s):  
Low Power ◽  
Organic Electronics ◽  
High Performance ◽  
Low Cost ◽  
Physical Object ◽  
Successful Implementation ◽  
Electrical Measurements ◽  
Sensors And Actuators ◽  
Human Machine Interaction ◽  
Roll To Roll

Abstract The emerging Internet-of-Everything (IoE) framework aims to revolutionise human-machine interaction where billions of sensors and actuators placed on almost every physical object will be tasked to communicate with each other. A substantial fraction of these devices will be placed on locations that would undergo repeated bending deformation (such as sensors for prosthetics, human body and robots) or on curved surfaces (like interior as well as exterior of automobiles, buildings and industrial equipment). Therefore, flexible sensors and actuators delivering high performance at low power requirements and manufactured at low cost will be the key for successful implementation of IoE. Though massive developments achieved in printed and organic electronics have enabled them to fulfil the required flexibility and low cost demands of IoE applications, printed and organic electronics often fall short of the high performance and low power requirements demonstrated by silicon ICs. Flexible chip foil packages fabricated by integrating ultra-thin bare silicon ICs fulfil the aforementioned demands posed by IoE applications and therefore, they are often considered as potential enablers of IoE. Here, we present an innovative roll-to-roll manufacturing compatible low cost approach for direct metal interconnection and integration of ultra-thin silicon ICs. The thickness of the fabricated flexible packages with the integrated and interconnected ultra-thin ICs were as thin as 100 μm. Electrical measurements conducted on the 60 fabricated samples with interconnected flexible ultra-thin ICs revealed a very promising yield of 94%.

Modulation Doped Si/SiGe Heterostructures

1991 ◽  
Vol 220 ◽  
Author(s):  
F. Schäffler ◽  
Daimler-Benz AG
Keyword(s):  
Room Temperature ◽  
Field Effect Transistor ◽  
High Electron ◽  
Dopant Distribution ◽  
Band Engineering ◽  
Main Emphasis ◽  
Device Applications ◽  
Effect Transistor ◽  
P Type ◽  
Thermal Stability Of

ABSTRACTAn overview of SiGe-based, modulation doped heterostructures is given. Strained layer handling, a prerequisite for realizing both n- and p-type devices, Is treated in terms of band engineering. The main emphasis is put on recent results obtained with high-electron mobility n-type Si/SiGe structures. Hall, Shubnikov-deHaas, and cyclotron resonance measurements are presented. The thermal stability of the heterostructures and the dopant distribution are treated with respect to device applications. Room temperature and 77K dc-measurements on very recent modulation doped field effect transistor (MODFET) implementations using implanted source/drain contacts are discussed. Device concepts with n- and p-type MODFETs combined in a superior complementary layout (CMODFET) are proposed.

scholarly journals GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 347 ◽  
Author(s):  
Ying Wang ◽  
Xinyuan Zhou ◽  
Zaixing Yang ◽  
Fengyun Wang ◽  
Ning Han ◽  
...  
Keyword(s):  
Light Absorption ◽  
High Performance ◽  
Large Scale ◽  
Low Cost ◽  
Absorption Efficiency ◽  
Device Fabrication ◽  
Structure Property ◽  
Structure Property Relationships ◽  
Solar Energy Harvesting ◽  
Gaas Nanowire

Photovoltaics (PVs) based on nanostructured III/V semiconductors can potentially reduce the material usage and increase the light-to-electricity conversion efficiency, which are anticipated to make a significant impact on the next-generation solar cells. In particular, GaAs nanowire (NW) is one of the most promising III/V nanomaterials for PVs due to its ideal bandgap and excellent light absorption efficiency. In order to achieve large-scale practical PV applications, further controllability in the NW growth and device fabrication is still needed for the efficiency improvement. This article reviews the recent development in GaAs NW-based PVs with an emphasis on cost-effectively synthesis of GaAs NWs, device design and corresponding performance measurement. We first discuss the available manipulated growth methods of GaAs NWs, such as the catalytic vapor-liquid-solid (VLS) and vapor-solid-solid (VSS) epitaxial growth, followed by the catalyst-controlled engineering process, and typical crystal structure and orientation of resulted NWs. The structure-property relationships are also discussed for achieving the optimal PV performance. At the same time, important device issues are as well summarized, including the light absorption, tunnel junctions and contact configuration. Towards the end, we survey the reported performance data and make some remarks on the challenges for current nanostructured PVs. These results not only lay the ground to considerably achieve the higher efficiencies in GaAs NW-based PVs but also open up great opportunities for the future low-cost smart solar energy harvesting devices.

scholarly journals Applications of Machine Learning and High-Performance Computing in the Era of COVID-19

2021 ◽  
Vol 4 (3) ◽  
pp. 40
Author(s):  
Abdul Majeed
Keyword(s):  
Machine Learning ◽  
High Performance Computing ◽  
High Performance ◽  
Low Cost ◽  
General Purpose ◽  
Prototype System ◽  
Successful Implementation ◽  
Privacy And Security ◽  
Applications Of Machine Learning ◽  
Performance Computing

During the ongoing pandemic of the novel coronavirus disease 2019 (COVID-19), latest technologies such as artificial intelligence (AI), blockchain, learning paradigms (machine, deep, smart, few short, extreme learning, etc.), high-performance computing (HPC), Internet of Medical Things (IoMT), and Industry 4.0 have played a vital role. These technologies helped to contain the disease’s spread by predicting contaminated people/places, as well as forecasting future trends. In this article, we provide insights into the applications of machine learning (ML) and high-performance computing (HPC) in the era of COVID-19. We discuss the person-specific data that are being collected to lower the COVID-19 spread and highlight the remarkable opportunities it provides for knowledge extraction leveraging low-cost ML and HPC techniques. We demonstrate the role of ML and HPC in the context of the COVID-19 era with the successful implementation or proposition in three contexts: (i) ML and HPC use in the data life cycle, (ii) ML and HPC use in analytics on COVID-19 data, and (iii) the general-purpose applications of both techniques in COVID-19’s arena. In addition, we discuss the privacy and security issues and architecture of the prototype system to demonstrate the proposed research. Finally, we discuss the challenges of the available data and highlight the issues that hinder the applicability of ML and HPC solutions on it.

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