Solar wafers. Data sheet and product information for crystalline silicon wafers for solar cell manufacturing

2009 ◽  
Keyword(s):  
Solar Cell ◽  
Product Information ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Data Sheet ◽  
Cell Manufacturing

Surface Contamination of Silicon Wafer after Acidic Texturisation

2012 ◽  
Vol 187 ◽  
pp. 337-340 ◽  
Author(s):  
Antje Oltersdorf ◽  
Anamaria Moldovan ◽  
Michael Bayer ◽  
Martin Zimmer ◽  
Jochen Rentsch
Keyword(s):  
Solar Cell ◽  
Silicon Wafer ◽  
Metal Contamination ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Surface Contamination ◽  
Crystalline Silicon Solar Cell ◽  
Cell Manufacturing ◽  
Cleaning Methods ◽  
Wafer Surfaces

The acidic texture bath that is commonly used in crystalline silicon solar cell manufacturing is a mixture of HF/HNO3/H2O [. While the influences of metal contamination on silicon wafer surfaces as well as several cleaning methods were intensively investigated in the previous 30 years [ the effect of metal contaminations in texturisation baths has not yet been studied intensively. There are two categories of contaminations:

A Simple Texturization Approach for Mono-Crystalline Silicon Solar Cell with Low TMAH Concentration Solution

2011 ◽  
Vol 685 ◽  
pp. 26-30 ◽  
Author(s):  
Wei Ying Ou ◽  
Yao Zhang ◽  
Hai Ling Li ◽  
Lei Zhao ◽  
Chun Lan Zhou ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Cost Effective ◽  
Anisotropic Etching ◽  
Silicon Wafers ◽  
Tetramethylammonium Hydroxide ◽  
Textured Surface ◽  
Crystalline Silicon Solar Cell ◽  
Tmah Solution

Texturing for mono-crystalline silicon solar cell by chemical anisotropic etching is one of the most important techniques in photovoltaic industry. In recent years, tetramethylammonium hydroxide (TMAH) solution or a mixture of TMAH solution with IPA was reported to be used for random pyramids texturization on silicon surface due to its non-volatile, nontoxic, good anisotropic etching characteristics and uncontaminated metal ions. However, most of the studies were reported about the etching processes by using high TMAH concentration solutions. In this study, a simple and cost-effective approach for texturing mono-crystalline silicon wafers in low TMAH concentration solutions was proposed. Etching was performed on (100) silicon wafers using silicon-dissolved tetramethylammonium hydroxide (TMAH) solutions (0.5~1 %) without addition of surfactant. The surface phenomena, surface morphology and surface reflectance have been analyzed. A textured surface with smaller and smooth pyramids can be realized by using 1 % silicon-dissolved TMAH solutions.

Experimental Analysis of Laser Scattering Patterns for the Surface Inspection of Crystalline Wafers in Solar Cell

2013 ◽  
Vol 404 ◽  
pp. 560-565
Author(s):  
Gyung Bum Kim
Keyword(s):  
Solar Cell ◽  
Experimental Analysis ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Manufacturing Processes ◽  
Surface Inspection ◽  
Scattering Mechanism ◽  
Laser Scattering ◽  
Mean Intensity ◽  
The Mean

The surface inspection of crystalline silicon wafers is of importance in manufacturing processes for solar cells. In this paper, The laser scattering mechanism is designed and manufactured through detailed investigations of the light scattering characteristics. Its parameters are to be optimally selected to obtain effective and featured patterns of laser scattering. The optimal parametric ranges of laser scattering are determined using the mean intensity of laser scattering. As a result of the experimental analysis of laser scattering patterns, two pieces of evidence that are effective for the detection of micro defects are extracted. It is confirmed that the two features are regarded as important information for the detection of defects in crystalline silicon wafers. The usefulness of the designed mechanism and of extracted features is verified through experimental results.

Six Sigma-based approach to optimise the diffusion process of crystalline silicon solar cell manufacturing

2013 ◽  
Vol 35 (2) ◽  
pp. 190-204 ◽  
Author(s):  
A. Guru Prasad ◽  
S. Saravanan ◽  
E.V. Gijo ◽  
Sreenivasa Murty Dasari ◽  
Raghu Tatachar ◽  
...  
Keyword(s):  
Solar Cell ◽  
Diffusion Process ◽  
Six Sigma ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Crystalline Silicon Solar Cell ◽  
Cell Manufacturing

scholarly journals The “Micromorph” Cell: a New Way to High-Efficiency-Low-Temperature Crystalline Silicon Thin-Film Cell Manufacturing?

1996 ◽  
Vol 452 ◽  
Author(s):  
H. Keppner ◽  
P. Torres ◽  
J. Meier ◽  
R. Platz ◽  
D. Fischer ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Low Temperature ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
Cell Manufacturing ◽  
Manufacturing Techniques

AbstractIn the past, microcrystalline silicon (μc-Si:H) has been successfully used as active semiconductor in entirely μc-Si:H p-i-n solar cells and a new type of tandem solar cell, called the “micromorph” cell, was introduced [1]. Micromorph cells consist of an amorphous silicon top cell and a microcrystalline bottom cell. In the paper a micromorph cell with a stable efficiency of 10.7 % (confirmed by ISE Freiburg) is reported.Among sofar existing crystalline silicon-based solar cell manufacturing techniques, the application of microcrystalline silicon is a new promising way towards implementing thin-film silicon solar cells with a low temperature deposition. Microcrystalline silicon can, indeed, be deposited at temperatures as low as 220°C; hence, the way is here open to use cheap substrates as, e.g. plastic or glass. In the present paper, the development of single and tandem cells containing microcrystalline silicon is reviewed. As stated in previous publications, microcrystalline silicon technique has at present a severe drawback that has yet to be overcome: Its deposition rate for solar-grade material is about 2Å/s; in a more recent case 4.3 Å/s [2] could be obtained. In the present paper, using suitable mixtures of silane, hydrogen and argon, deposition rates of 9.4 Å/s are presented. Thereby the dominating plasma mechanism and the basic properties of resulting layers are described in detail. A first entirely microcrystalline cell deposited at 8.7 Å/s has an efficiency of 3.15%.

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