Carbonaceous products for the production of aluminium. Baked anodes and shaped carbon products. Determination of the coefficient of linear thermal expansion

2005 ◽  
Keyword(s):  
Thermal Expansion ◽  
Linear Thermal Expansion

Confirmation of the new technique for measuring the linear thermal expansion of silicon

1993 ◽  
Vol 8 (1) ◽  
pp. 36-38 ◽  
Author(s):  
Liu Fengchao
Keyword(s):  
Thermal Expansion ◽  
Room Temperature ◽  
Accurate Determination ◽  
Linear Thermal Expansion ◽  
Linear Expansion Coefficient ◽  
X Ray ◽  
High Purity Silicon ◽  
Different Temperatures ◽  
Better Than

This paper further confirms that the direct measurement of diffraction angles at different temperatures by using the X-ray diffractometer is better than measurement of the lattice parameters for the rapid and accurate determination of the linear thermal expansion of silicon. High purity silicon has the linear expansion coefficient, α= (2.45±0.05) × 10−6/°C at room temperature. This value does not change for doped P-type and N-type silicon.

Sign in / Sign up

Export Citation Format

Share Document