Method for determination of the coefficient of mean linear thermal expansion of glass

1989 ◽  
1993 ◽  
Vol 8 (1) ◽  
pp. 36-38 ◽  
Author(s):  
Liu Fengchao

This paper further confirms that the direct measurement of diffraction angles at different temperatures by using the X-ray diffractometer is better than measurement of the lattice parameters for the rapid and accurate determination of the linear thermal expansion of silicon. High purity silicon has the linear expansion coefficient, α= (2.45±0.05) × 10−6/°C at room temperature. This value does not change for doped P-type and N-type silicon.


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