Graphic technology. Application of reflection densitometry and colorimetry to process control or evaluation of prints and proofs

2015 ◽  
2016 ◽  
Vol 2016 (1) ◽  
pp. 146-152
Author(s):  
Александр Сафонов ◽  
Aleksandr Safonov

A current approach to quality management at an industrial enterprise implies a complex automation of all its businessprocesses. The most significant element of the quality management system is a process of discrepancy control. That is why as a top-priority step in the creation of an integrated quality management system is an automation of a discrepancy process control. A basic role in this process is carried out by a service of quality management which reveals discrepancies and a department of technologists defining their reasons and specifying a complex of correcting measures. A classical approach to the activities of a quality control department (QCD) used quite often until now consists in the fixation of discrepancies as a report of the QCD and their archiving till an urgent moment (outer claims coming, occurrences of discrepancies in further manufacturing). Within the bounds of the integrated quality management system there is developed an automated system “DC” (Discrepancy Control) the basic purposes of which consist in the following: a record of manufacturing discrepancies, a record of correcting measures to reveal discrepancies, a control of correcting measures performed, a record of discrepancy reasons, an analysis of discrepancy occurrences, an estimate of function quality of enterprise services. This automated system is introduced in the Joint-Stock Company - Karachevsky Plant “Electrodetail”


Author(s):  
T. C. Tisone ◽  
S. Lau

In a study of the properties of a Ta-Au metallization system for thin film technology application, the interdiffusion between Ta(bcc)-Au, βTa-Au and Ta2M-Au films was studied. Considered here is a discussion of the use of the transmission electron microscope(TEM) in the identification of phases formed and characterization of the film microstructures before and after annealing.The films were deposited by sputtering onto silicon wafers with 5000 Å of thermally grown oxide. The film thicknesses were 2000 Å of Ta and 2000 Å of Au. Samples for TEM observation were prepared by ultrasonically cutting 3mm disks from the wafers. The disks were first chemically etched from the silicon side using a HNO3 :HF(19:5) solution followed by ion milling to perforation of the Au side.


1956 ◽  
Vol 48 (2) ◽  
pp. 81-84
Author(s):  
William Priestley ◽  
B. Dudenbostel, Jr.

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