scholarly journals Effect of strain on aluminum nitride/gallium nitride Distributed Bragg Reflectors

2009 ◽  
Author(s):  
Christopher Michael Miller
Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1487 ◽  
Author(s):  
Peter Griffin ◽  
Tongtong Zhu ◽  
Rachel Oliver

Utilising dislocation-related vertical etching channels in gallium nitride, we have previously demonstrated a simple electrochemical etching (ECE) process that can create layered porous GaN structures to form distributed Bragg reflectors for visible light at wafer scale. Here, we apply the same ECE process to realise AlGaN-based ultraviolet distributed Bragg reflectors (DBRs). These are of interest because they could provide a pathway to non-absorbing UV reflectors to enhance the performance of UV LEDs, which currently have extremely low efficiency. We have demonstrated porous AlGaN-based UV DBRs with a peak reflectance of 89% at 324 nm. The uniformity of these devices is currently low, as the as-grown material has a high density of V-pits and these alter the etching process. However, our results indicate that if the material growth is optimised, the ECE process will be useful for the fabrication of UV reflectors.


2007 ◽  
Vol 91 (21) ◽  
pp. 211108 ◽  
Author(s):  
Rajat Sharma ◽  
Yong-Seok Choi ◽  
Chiou-Fu Wang ◽  
Aurélien David ◽  
Claude Weisbuch ◽  
...  

APL Photonics ◽  
2021 ◽  
Vol 6 (2) ◽  
pp. 026104
Author(s):  
Mirela Malekovic ◽  
Esteban Bermúdez-Ureña ◽  
Ullrich Steiner ◽  
Bodo D. Wilts

1977 ◽  
Vol 16 (8) ◽  
pp. 1389-1394 ◽  
Author(s):  
Masahiro Okuda ◽  
Kiyoshi Onaka ◽  
Shigeharu Kita

2016 ◽  
Vol 25 (9) ◽  
pp. 097302
Author(s):  
Linlin Tu ◽  
Chi Zhang ◽  
Zhong Huang ◽  
Jason Yau ◽  
Peng Zhan ◽  
...  

2008 ◽  
Vol 93 (22) ◽  
pp. 221905 ◽  
Author(s):  
D. Mangaiyarkarasi ◽  
M. B. H. Breese ◽  
Y. S. Ow

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