scholarly journals Microwave Photonic ICs for 25 Gb/s Optical Link Based on SiGe BiCMOS Technology

Symmetry ◽  
2019 ◽  
Vol 11 (12) ◽  
pp. 1453 ◽  
Author(s):  
Andrey A. Kokolov ◽  
Dmitry A. Konkin ◽  
Artyom S. Koryakovtsev ◽  
Feodor I. Sheyerman ◽  
Leonid I. Babak
Keyword(s):  
Extinction Ratio ◽  
Single Chip ◽  
Microwave Photonic ◽  
Half Wave Voltage ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Driver Amplifier ◽  
Integrated Transmitters ◽  
Optical Divider ◽  
Better Than

The design, simulation and experimental results of the integrated optical and electronic components for 25 Gb/s microwave photonic link based on a 0.25 µm SiGe:C BiCMOS technology process are presented. A symmetrical depletion-type Mach-Zehnder modulator (MZM) and driver amplifier are intended for electro-optical (E/O) integrated transmitters. The optical divider and combiner of MZM are designed based on the self-imaging theory and then simulated with EM software. In order to verify the correctness of the theory and material properties used in the simulation, a short test (prototype) MZM of 1.9 mm length is produced and measured. It shows an extinction ratio of 19 dB and half-wave voltage-length product of Vπ ∙ L = ~1.5 V·cm. Based on these results, the construction of the segmented modulator with several driver amplifier units is defined. The designed driver amplifier unit provides a bandwidth of more than 30 GHz, saturated output power of 6 dBm (output voltage of Vpp = 1.26 V), and matching better than −15 dB up to 35 GHz; it dissipates 170 mW of power and occupies an area of 0.4 × 0.38 mm2. The optical-electrical (O/E) receiver consists of a Ge-photodiode, transimpedance amplifier (TIA), and passive optical structures that are integrated on a single chip. The measured O/E 3 dB analog bandwidth of the integrated receiver is 22 GHz, and output matching is better than −15 dB up to 30 GHz, which makes the receiver suitable for 25 Gb/s links with intensity modulation. The receiver operates at 1.55 μm wavelength, uses 2.5 V and 3.3 V power supplies, dissipates 160 mW of power, and occupies an area of 1.46 × 0.85 mm2.

122 GHz single-chip dual-channel SMD radar sensor with on-chip antennas for distance and angle measurements

2015 ◽  
Vol 7 (3-4) ◽  
pp. 407-414 ◽  
Author(s):  
Mekdes G. Girma ◽  
Markus Gonser ◽  
Andreas Frischen ◽  
Jürgen Hasch ◽  
Yaoming Sun ◽  
...  
Keyword(s):  
Building Blocks ◽  
Single Chip ◽  
Fully Integrated ◽  
Dual Channel ◽  
Angle Measurements ◽  
Bicmos Technology ◽  
Measurement Results ◽  
Sige Bicmos ◽  
On Chip ◽  
Digital Processor

This paper describes the design considerations, integration issues, packaging, and experimental performance of recently developed D-Band dual-channel transceiver with on-chip antennas fabricated in a SiGe-BiCMOS technology. The design comprises a fully integrated transceiver circuit with quasi-monostatic architecture that operates between 114 and 124 GHz. All analog building blocks are controllable via a serial peripheral interface to reduce the number of connections and facilitate the communication between digital processor and analog building blocks. The two electromagnetically coupled patch antennas are placed on the top of the die with 8.6 dBi gain and have a simulated efficiency of 60%. The chip consumes 450 mW and is wire-bonded into an open-lid 5 × 5 mm2quad-flat no-leads package. Measurement results for the estimation of range, and azimuth angle in single object situation are presented.

scholarly journals A SiGe 3-stage LNA for automotive radar application from 76 to 81 GHz

2019 ◽  
Vol 30 ◽  
pp. 01004
Author(s):  
Vadim Budnyaev ◽  
Valeriy Vertegel
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Power Consumption ◽  
Automotive Radar ◽  
W Band ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Noise Amplifier ◽  
Layout Area ◽  
Better Than

This paper presents the simulation results of the W-band 3-stage low noise amplifier which is designed in 0.13 μm SiGe BiCMOS technology. The LNA achieves a peak S21 of 24.1 dB and noise figure of 6 dB at 80 GHz with 3 dB bandwidth of 14 GHz from 73 to 87 GHz. S11 is better than 11 dB. The simulated input 1 dB compression point is –23 dBm at 80 GHz with low power consumption of 26 mW from 1.2 V voltage supply. Layout area is 0.36 mm2.

A Single-Chip 5GHz WLAN Transmitter in 0.35μm Si/SiGe BiCMOS Technology

2006 ◽  
Author(s):  
F. Alimenti ◽  
M. Borgarino ◽  
R. Codeluppi ◽  
V. Palazzari ◽  
M. Pifferi ◽  
...  
Keyword(s):  
Single Chip ◽  
Bicmos Technology ◽  
Sige Bicmos

Operation of Current Mirrors in SiGe BiCMOS Technology at Cryogenic Temperatures

2021 ◽  
Vol 68 (4) ◽  
pp. 1439-1445
Author(s):  
Hanbin Ying ◽  
Jeffrey W. Teng ◽  
John D. Cressler
Keyword(s):  
Cryogenic Temperatures ◽  
Current Mirrors ◽  
Bicmos Technology ◽  
Sige Bicmos

Mitigating the Effects of Non-Linear Distortion Using Polarizers in Microwave Photonic Link

2019 ◽  
Vol 0 (0) ◽  
Author(s):  
Sarika Singh ◽  
Sandeep K. Arya ◽  
Shelly Singla
Keyword(s):  
Dynamic Range ◽  
Extinction Ratio ◽  
Polarization Angle ◽  
Third Order ◽  
Microwave Photonic ◽  
Linear Behavior ◽  
Spurious Free Dynamic Range ◽  
Non Linear ◽  
Intermodulation Distortions ◽  
Insertion Losses

AbstractA scheme to suppress nonlinear intermodulation distortion in microwave photonic (MWP) link is proposed by using polarizers to compensate inherent non-linear behavior of dual-electrode Mach-Zehnder modulator (DE-MZM). Insertion losses and extinction ratio have also been considered. Simulation results depict that spurious free dynamic range (SFDR) of proposed link reaches to 130.743 dB.Hz2/3. A suppression of 41 dB in third order intermodulation distortions and an improvement of 15.3 dB is reported when compared with the conventional link. In addition, an electrical spectrum at different polarization angles is extracted and 79^\circ is found to be optimum value of polarization angle.

A Ka-Band Single-Chip SiGe BiCMOS Phased-Array Transmit/Receive Front-End

2016 ◽  
Vol 64 (11) ◽  
pp. 3667-3677 ◽  
Author(s):  
Chao Liu ◽  
Qiang Li ◽  
Yihu Li ◽  
Xiao-Dong Deng ◽  
Hailin Tang ◽  
...  
Keyword(s):  
Phased Array ◽  
Single Chip ◽  
Ka Band ◽  
Front End ◽  
Sige Bicmos
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