scholarly journals All-Electronic Emitter-Detector Pairs for 250 GHz in Silicon

Sensors ◽  
2021 ◽  
Vol 21 (17) ◽  
pp. 5795
Author(s):  
Kęstutis Ikamas ◽  
Dmytro B. But ◽  
Albert Cesiul ◽  
Cezary Kołaciński ◽  
Tautvydas Lisauskas ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
Direct Detection ◽  
Signal To Noise Ratio ◽  
Complementary Metal Oxide Semiconductor ◽  
Electronic System ◽  
Oxide Semiconductor ◽  
Voltage Controlled Oscillator ◽  
Medical Markets ◽  
Harmonic Voltage ◽  
System Operating

The spread of practical terahertz (THz) systems dedicated to the telecommunication, pharmacy, civil security, or medical markets requires the use of mainstream semiconductor technologies, such as complementary metal-oxide-semiconductor (CMOS) lines. In this paper, we discuss the operation of a CMOS-based free space all-electronic system operating near 250 GHz, exhibiting signal-to-noise ratio (SNR) with 62 dB in the direct detection regime for one Hz equivalent noise bandwidth. It combines the state-of-the-art detector based on CMOS field-effect-transistors (FET) and a harmonic voltage-controlled oscillator (VCO). Three generations of the oscillator circuit are presented, and the performance characterization techniques and their improvement are explained in detail. The manuscript presents different emitter–detector pair operation modalities, including spectroscopy and imaging.

The Effect of Strain on the Formation of Dislocations at the SiGe/Si Interface

MRS Bulletin ◽  
1996 ◽  
Vol 21 (4) ◽  
pp. 38-44 ◽  
Author(s):  
F.K. LeGoues
Keyword(s):  
Metal Oxide ◽  
High Speed ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Design Rule ◽  
Strained Si

Recently much interest has been devoted to Si-based heteroepitaxy, and in particular, to the SiGe/Si system. This is mostly for economical reasons: Si-based technology is much more advanced, is widely available, and is cheaper than GaAs-based technology. SiGe opens the door to the exciting (and lucrative) area of Si-based high-performance devices, although optical applications are still limited to GaAs-based technology. Strained SiGe layers form the base of heterojunction bipolar transistors (HBTs), which are currently used in commercial high-speed analogue applications. They promise to be low-cost compared to their GaAs counterparts and give comparable performance in the 2-20-GHz regime. More recently we have started to investigate the use of relaxed SiGe layers, which opens the door to a wider range of application and to the use of SiGe in complementary metal oxide semiconductor (CMOS) devices, which comprise strained Si and SiGe layers. Some recent successes include record-breaking low-temperature electron mobility in modulation-doped layers where the mobility was found to be up to 50 times better than standard Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Even more recently, SiGe-basedp-type MOSFETS were built with oscillation frequency of up to 50 GHz, which is a new record, in anyp-type material for the same design rule.

scholarly journals Up-Conversion Sensing of 2D Spatially-Modulated Infrared Information-Carrying Beams with Si-Based Cameras

Sensors ◽  
2020 ◽  
Vol 20 (12) ◽  
pp. 3610
Author(s):  
Adrián J. Torregrosa ◽  
Emir Karamehmedović ◽  
Haroldo Maestre ◽  
María Luisa Rico ◽  
Juan Capmany
Keyword(s):  
Optical Communications ◽  
Near Infrared ◽  
Nonlinear Crystal ◽  
Signal To Noise Ratio ◽  
Low Cost ◽  
Infrared Image ◽  
Complementary Metal Oxide Semiconductor ◽  
Local Oscillator ◽  
Oxide Semiconductor ◽  
Free Space Optical

Up-conversion sensing based on optical heterodyning of an IR (infrared) image with a local oscillator laser wave in a nonlinear optical sum-frequency mixing (SFM) process is a practical solution to circumvent some limitations of IR image sensors in terms of signal-to-noise ratio, speed, resolution, or cooling needs in some demanding applications. In this way, the spectral content of an IR image can become spectrally shifted to the visible/near infrared (VIS/NWIR) and then detected with silicon focal plane arrayed sensors (Si-FPA), such as CCD/CMOS (charge-coupled and complementary metal-oxide-semiconductor devices). This work is an extension of a previous study where we recently introduced this technique in the context of optical communications, in particular in FSOC (free-space optical communications). Herein, we present an image up-conversion system based on a 1064 nm Nd3+: YVO4 solid-state laser with a KTP (potassium titanyl phosphate) nonlinear crystal located intra-cavity where a laser beam at 1550 nm 2D spatially-modulated with a binary Quick Response (QR) code is mixed, giving an up-converted code image at 631 nm that is detected with an Si-based camera. The underlying technology allows for the extension of other IR spectral allocations, construction of compact receivers at low cost, and provides a natural way for increased protection against eavesdropping.

scholarly journals A Programmable Impedance Tuner with a High Resolution Using a 0.18-um CMOS SOI Process for Improved Linearity

Electronics ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 7
Author(s):  
Younghwan Bae ◽  
Heesauk Jhon ◽  
Junghyun Kim
Keyword(s):  
Field Effect Transistors ◽  
Complementary Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Impedance Variation ◽  
Measurement Results ◽  
Power Handling Capability ◽  
Impedance Tuners ◽  
Step Over ◽  
Load Pull

In this paper, a novel coupler/reflection-type programmable electronic impedance tuner combined with switches that were fabricated by a 0.18-um complementary metal–oxide–semiconductor (CMOS) silicon-on-insulator (SOI) process is proposed for replacement of the conventional mechanical tuner in power amplifier (PA) load-pull test. By employing the multi-stacked field-effect transistors (FETs) as a single-branch switch, the proposed tuner has the advantage of precise impedance variation with systematic and magnitude and phase adjustment. Additionally, it led to high standing wave ratio (SWR) coverage and a good impedance resolution with a high power handling capability. Furthermore, the double-branch based on multi-stacked FET was applied to switches for additional enhancement of the intermodulation distortion (IMD) performance through the mitigated drain-source voltage of the single-FET. Drawing upon the measurement results, we demonstrated that SWR changed from 2 to 6 sequentially with a 12–15° phase angle step over a mid/high-band range of a 1.5–2.1 GHz band for 3G/4G handset application. In addition, the PA load-pull measurement results obtained using the proposed tuners verified their practicality and competitive performance with mechanical tuners. Finally, the measured linearity using the double-branch switch demonstrated the good IMD3 performance of −78 dBc, and this result is noteworthy when compared with conventional electronic impedance tuners.

scholarly journals Magnetic Micro Sensors with Two Magnetic Field Effect Transistors Fabricated Using the Commercial Complementary Metal Oxide Semiconductor Process

Sensors ◽  
2020 ◽  
Vol 20 (17) ◽  
pp. 4731
Author(s):  
Wei-Ren Chen ◽  
Yao-Chuan Tsai ◽  
Po-Jen Shih ◽  
Cheng-Chih Hsu ◽  
Ching-Liang Dai
Keyword(s):  
Magnetic Field ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Magnetic Field Effect ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Micro Sensor

The fabrication and characterization of a magnetic micro sensor (MMS) with two magnetic field effect transistors (MAGFETs) based on the commercial complementary metal oxide semiconductor (CMOS) process are investigated. The magnetic micro sensor is a three-axis sensing type. The structure of the magnetic microsensor is composed of an x/y-MAGFET and a z-MAGFET. The x/y-MAGFET is employed to sense the magnetic field (MF) in the x- and y-axis, and the z-MAGFET is used to detect the MF in the z-axis. To increase the sensitivity of the magnetic microsensor, gates are introduced into the two MAGFETs. The sensing current of the MAGFET enhances when a bias voltage is applied to the gates. The finite element method software Sentaurus TCAD was used to analyze the MMS’s performance. Experiments show that the MMS has a sensitivity of 182 mV/T in the x-axis MF and a sensitivity of 180 mV/T in the y-axis MF. The sensitivity of the MMS is 27.8 mV/T in the z-axis MF.

scholarly journals Photoacoustic Imaging with Capacitive Micromachined Ultrasound Transducers: Principles and Developments

Sensors ◽  
2019 ◽  
Vol 19 (16) ◽  
pp. 3617 ◽  
Author(s):  
Jasmine Chan ◽  
Zhou Zheng ◽  
Kevan Bell ◽  
Martin Le ◽  
Parsin Haji Reza ◽  
...  
Keyword(s):  
Photoacoustic Imaging ◽  
Signal To Noise Ratio ◽  
Complementary Metal Oxide Semiconductor ◽  
Photoacoustic Signal ◽  
Motion Artifacts ◽  
Oxide Semiconductor ◽  
Ring Resonators ◽  
Ultrasound Transducers ◽  
Fabrication Technique ◽  
Acoustic Techniques

Photoacoustic imaging (PAI) is an emerging imaging technique that bridges the gap between pure optical and acoustic techniques to provide images with optical contrast at the acoustic penetration depth. The two key components that have allowed PAI to attain high-resolution images at deeper penetration depths are the photoacoustic signal generator, which is typically implemented as a pulsed laser and the detector to receive the generated acoustic signals. Many types of acoustic sensors have been explored as a detector for the PAI including Fabry–Perot interferometers (FPIs), micro ring resonators (MRRs), piezoelectric transducers, and capacitive micromachined ultrasound transducers (CMUTs). The fabrication technique of CMUTs has given it an edge over the other detectors. First, CMUTs can be easily fabricated into given shapes and sizes to fit the design specifications. Moreover, they can be made into an array to increase the imaging speed and reduce motion artifacts. With a fabrication technique that is similar to complementary metal-oxide-semiconductor (CMOS), CMUTs can be integrated with electronics to reduce the parasitic capacitance and improve the signal to noise ratio. The numerous benefits of CMUTs have enticed researchers to develop it for various PAI purposes such as photoacoustic computed tomography (PACT) and photoacoustic endoscopy applications. For PACT applications, the main areas of research are in designing two-dimensional array, transparent, and multi-frequency CMUTs. Moving from the table top approach to endoscopes, some of the different configurations that are being investigated are phased and ring arrays. In this paper, an overview of the development of CMUTs for PAI is presented.

scholarly journals Active Thermoelectric Vacuum Sensor Based on Frequency Modulation

Micromachines ◽  
2019 ◽  
Vol 11 (1) ◽  
pp. 15 ◽  
Author(s):  
Shu-Jung Chen ◽  
Yung-Chuan Wu
Keyword(s):  
Frequency Modulation ◽  
Signal To Noise Ratio ◽  
Complementary Metal Oxide Semiconductor ◽  
Harmonic Signal ◽  
Phase Lock Loop ◽  
Oxide Semiconductor ◽  
Alternative Approach ◽  
Vacuum Sensor ◽  
Cmos Mems ◽  
Mems Process

This paper introduces a thermoelectric-type sensor with a built-in heater as an alternative approach to the measurement of vacuum pressure based on frequency modulation. The proposed sensor is fabricated using the TSMC (Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan) 0.35 μm complementary metal-oxide-semiconductor-microelectro-mechanical systems (CMOS–MEMS) process with thermocouples positioned central-symmetrically. The proposed frequency modulation technique involves locking the sensor output signal at a given frequency using a phase-lock-loop (PLL) amplifier to increase the signal-to-noise ratio (SNR) and thereby enhance the sensitivity of vacuum measurements. An improved first harmonic signal detection based on asymmetrical applied heating gives a precise measurement. Following calibration, the output voltage is in good agreement with the calibration values, resulting in an error of 0.25% under pressures between 0.1–10 Torr.

Logic Gates Design and Simulation Using Spatial Wavefunction Switched (SWS) FETs

2015 ◽  
Vol 24 (03n04) ◽  
pp. 1550008 ◽  
Author(s):  
Bander Saman ◽  
P. Mirdha ◽  
M. Lingalugari ◽  
P. Gogna ◽  
F. C. Jain ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Field Effect Transistors ◽  
Complementary Metal Oxide Semiconductor ◽  
Logic Gates ◽  
Behavioral Model ◽  
Charge Carrier Concentration ◽  
Oxide Semiconductor ◽  
Short Channel ◽  
Proposed Model ◽  
High Band

This paper presents the design and modeling of logic gates using two channel spatial wavefunction switched field-effect transistors (SWSFETs) it is also known as a twin-drain MOSFET. In SWSFETs, the channel between source and drain has two or more quantum wells (QWs) layers separated by a high band gap material between them. The gate voltage controls the charge carrier concentration in the two quantum wells layers and it causes the switching of charge carriers from one channel to other channel of the device. The first part of this paper shows the characteristics of n-channel SWSFET model, the second part provides the circuit topology for the SWSFET inverter and universal gates- NAND, AND, NOR,OR, XOR and XOR. The proposed model is based on integration between Berkeley Short-channel IGFET Model (BSIM) and Analog Behavioral Model (ABM), the model is suitable to investigate the gates configuration and transient analysis at circuit level. The results show that all basic two-input logic gates can be implanted by using n-channel SWSFET only, It covers less area compared with CMOS (Complementary metal–oxide–semiconductor) gates. The NAND-NOR can be performed by three SWSFET, moreover the exclusive-NOR “XNOR” can be done by four SWSFET transistors also AND, OR, XOR gates require two additional SWSFET for inverting.

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