Sensitive Planar Microwave Diode on the Base of Ternary AlxGa1-xAs Semiconductor Compound

Maksimas Anbinderis; Steponas Ašmontas; Aurimas Čerškus; Jonas Gradauskas; Andžej Lučun; Aldis Šilėnas; Algirdas Sužiedėlis

doi:10.3390/s21134487

Sensitive Planar Microwave Diode on the Base of Ternary AlxGa1-xAs Semiconductor Compound

Sensors ◽

10.3390/s21134487 ◽

2021 ◽

Vol 21 (13) ◽

pp. 4487

Author(s):

Maksimas Anbinderis ◽

Steponas Ašmontas ◽

Aurimas Čerškus ◽

Jonas Gradauskas ◽

Andžej Lučun ◽

...

Keyword(s):

High Frequency ◽

Room Temperature ◽

Strong Dependence ◽

Experimental Studies ◽

Microwave Frequency ◽

Electrical Characteristics ◽

Millimeter Wavelength ◽

External Bias ◽

Semiconductor Compound ◽

Voltage Responsivity

The article presents the results of experimental studies of the dc and high-frequency electrical characteristics of planar microwave diodes that are fabricated on the base of the n-AlxGa1-xAs layer (x = 0, 0.15 or 0.3), epitaxially grown on a semi-insulating GaAs substrate. The diodes can serve as reliable and inexpensive sensors of microwave radiation in the millimeter wavelength range; they sense electromagnetic radiation directly, without any external bias voltage at room temperature. The investigation revealed a strong dependence of the detection properties of the microwave diodes on AlAs mole fraction x: in the Ka microwave frequency range, the median value of voltage responsivity is several volts per watt in the case of GaAs-based diodes (x = 0), and it substantially increases, reaching hundreds of volts per watt at higher x values. Also, a model enabling us to forecast the responsivity of the sensor in other frequency ranges is proposed.

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Mechanical Properties and Dislocation Structure of Single Crystal Cdte Deformed in Compression at 300°C

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010009292x ◽

1976 ◽

Vol 34 ◽

pp. 592-593

Author(s):

Ernest L. Hall ◽

J. B. Vander Sande

Keyword(s):

Mechanical Properties ◽

Single Crystal ◽

Dislocation Structure ◽

Room Temperature ◽

Elevated Temperatures ◽

Strain Curve ◽

Optical Devices ◽

Semiconductor Compound ◽

Wide Range ◽

Sample Orientation

The present paper describes research on the mechanical properties and related dislocation structure of CdTe, a II-VI semiconductor compound with a wide range of uses in electrical and optical devices. At room temperature CdTe exhibits little plasticity and at the same time relatively low strength and hardness. The mechanical behavior of CdTe was examined at elevated temperatures with the goal of understanding plastic flow in this material and eventually improving the room temperature properties. Several samples of single crystal CdTe of identical size and crystallographic orientation were deformed in compression at 300°C to various levels of total strain. A resolved shear stress vs. compressive glide strain curve (Figure la) was derived from the results of the tests and the knowledge of the sample orientation.

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Calculation-and-experimental estimation of the role of the frequency ratio in changing the endurance at two-frequency deformation modes

Industrial laboratory Diagnostics of materials ◽

10.26896/1028-6861-2019-85-1-i-64-71 ◽

2019 ◽

Vol 85 (1(I)) ◽

pp. 64-71 ◽

Cited By ~ 1

Author(s):

M. M. Gadenin

Keyword(s):

High Frequency ◽

Experimental Studies ◽

Low Frequency ◽

Reduction Factor ◽

Single Frequency ◽

Cyclic Loads ◽

Small Ratio ◽

Harmonic Components ◽

Deformation Modes

The cycle configuration at two-frequency loading regimes depends on the number of parameters including the absolute values of the frequencies and amplitudes of the low-frequency and high-frequency loads added during this mode, the ratio of their frequencies and amplitudes, as well as the phase shift between these harmonic components, the latter having a significant effect only with a small ratio of frequencies. Presence of such two-frequency regimes or service loading conditions for parts of machines and structures schematized by them can significantly reduce their endurance. Using the results of experimental studies of changes in the endurance of a two-frequency loading of specimens of cyclically stable, cyclically softened and cyclically hardened steels under rigid conditions we have shown that decrease in the endurance under the aforementioned conditions depends on the ratio of frequencies and amplitudes of operation low-frequency low-cycle and high-frequency vibration stresses, and, moreover, the higher the level of the ratios of amplitudes and frequencies of those stacked harmonic processes of loading the greater the effect. It is shown that estimation of such a decrease in the endurance compared to a single frequency loading equal in the total stress (strains) amplitudes can be carried out using an exponential expression coupling those endurances through a parameter (reduction factor) containing the ratio of frequencies and amplitudes of operation cyclic loads and characteristic of the material. The reduction is illustrated by a set of calculation-experimental curves on the corresponding diagrams for each of the considered types of materials and compared with the experimental data.

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