scholarly journals Development and Research of a Theoretical Model of the Magnetic Tunnel Junction

Sensors ◽  
2021 ◽  
Vol 21 (6) ◽  
pp. 2118
Author(s):  
Oleg Polyakov ◽  
Vladimir Amelichev ◽  
Dmitry Zhukov ◽  
Dmitry Vasilyev ◽  
Sergey Kasatkin ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Theoretical Model ◽  
Tunnel Junction ◽  
Coupling Coefficient ◽  
Magnetic Tunnel Junction ◽  
Inhomogeneous Magnetic Field ◽  
Spintronic Devices ◽  
Ferromagnetic Layers ◽  
Magnetostatic Coupling

Spin-dependent tunneling structures are widely used in many spintronic devices and sensors. This paper describes the magnetic tunnel junction (MTJ) characteristics caused by the inhomogeneous magnetic field of ferromagnetic layers. The extremely oblate magnetic ellipsoids have been used to mimic these layers. The strong effect of an inhomogeneous magnetic field on the magnetoresistive layers’ interaction was demonstrated. The magnetostatic coupling coefficient is also calculated.

L10-MnGa based magnetic tunnel junction for high magnetic field sensor

2017 ◽  
Vol 50 (28) ◽  
pp. 285002 ◽  
Author(s):  
X P Zhao ◽  
J Lu ◽  
S W Mao ◽  
Z F Yu ◽  
H L Wang ◽  
...  
Keyword(s):  
Magnetic Field ◽  
High Magnetic Field ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Magnetic Field Sensor ◽  
Field Sensor

Spin Polarized Transport through Structures Consist of the Ferromagnetic Semiconductor in Presence of a Inhomogeneous Magnetic Field

2011 ◽  
Vol 194-196 ◽  
pp. 679-682
Author(s):  
Zahra Bamshad
Keyword(s):  
Magnetic Field ◽  
Spin Polarization ◽  
Fermi Energy ◽  
Magnetic Tunnel Junction ◽  
Inhomogeneous Magnetic Field ◽  
Spin Polarized ◽  
Polarized Transport ◽  
Dimensional Electron Gas ◽  
Spin Electronic ◽  
Spin Polarized Transport

The spin-polarized transport is investigated in a magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer placed in distance above the two dimensional electron gas (2DEG) in presence of an inhomogeneous external modulated magnetic field and a perpendicular wave vector dependent effective potential. Based on the transfer matrix method and the nearly-free-electron approximation the dependence of the conductance and spin polarization on the Fermi energy of the electrons are studied theoretically the. strong oscillations with large amplitude investigated in spin polarization in terms of the Fermi energy due to the inhomogeneous magnetic field. The conductance in terms of the Fermi energy shows no oscillation in low energy but has a strong pick in middle region. this results may be useful for the development of spin electronic devices based on coherent transport, or may be used as a tunable spin-filter.

scholarly journals Lattice Softening in Metastable bcc CoxMn100−x (001) Ferromagnetic Layers for a Strain-Free Magnetic Tunnel Junction

2021 ◽  
Vol 16 (5) ◽  
Author(s):  
Kevin Elphick ◽  
Kenta Yoshida ◽  
Tufan Roy ◽  
Tomohiro Ichinose ◽  
Kazuma Kunimatsu ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Ferromagnetic Layers ◽  
Lattice Softening

scholarly journals Tunnel Magnetoresistance of Fe3O4/MgO/Fe Nanostructures

2011 ◽  
Vol 2011 ◽  
pp. 1-3
Author(s):  
S. G. Chigarev ◽  
E. M. Epshtein ◽  
I. V. Malikov ◽  
G. M. Mikhailov ◽  
P. E. Zilberman
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Magnetic Fields ◽  
Tunnel Junction ◽  
Magnetic Energy ◽  
Magnetic Tunnel Junction ◽  
Tunnel Magnetoresistance ◽  
Unidirectional Anisotropy ◽  
Layer Orientation ◽  
Layer Magnetization

A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation is considered. The junction magnetic energy is analyzed as a function of the angle between the layer magnetization vectors under various magnetic fields. The tunnel magnetoresistance is calculated as a function of the external magnetic field. In contrast with junctions with unidirectional anisotropy, a substantially lower magnetic field is required for the junction switching.

scholarly journals Full voltage manipulation of the resistance of a magnetic tunnel junction

2019 ◽  
Vol 5 (12) ◽  
pp. eaay5141 ◽  
Author(s):  
Aitian Chen ◽  
Yuelei Zhao ◽  
Yan Wen ◽  
Long Pan ◽  
Peisen Li ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Energy Efficient ◽  
Room Temperature ◽  
Efficient Solution ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Magnetic Tunnel Junction ◽  
Free Layer ◽  
Spintronic Devices ◽  
Electrical Control

One of the motivations for multiferroics research is to find an energy-efficient solution to spintronic applications, such as the solely electrical control of magnetic tunnel junctions. Here, we integrate spintronics and multiferroics by depositing MgO-based magnetic tunnel junctions on ferroelectric substrate. We fabricate two pairs of electrodes on the ferroelectric substrate to generate localized strain by applying voltage. This voltage-generated localized strain has the ability to modify the magnetic anisotropy of the free layer effectively. By sequentially applying voltages to these two pairs of electrodes, we successively and unidirectionally rotate the magnetization of the free layer in the magnetic tunnel junctions to complete reversible 180° magnetization switching. Thus, we accomplish a giant nonvolatile solely electrical switchable high/low resistance in magnetic tunnel junctions at room temperature without the aid of a magnetic field. Our results are important for exploring voltage control of magnetism and low-power spintronic devices.

A complementary magnetic field sensor using magnetic tunnel junction

2015 ◽  
Author(s):  
Ding-Yeong Wang ◽  
Keng-Ming Kuo ◽  
Cheng-Wei Chien ◽  
Shan-Yi Yang ◽  
Sheng-Huang Huang ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Magnetic Field Sensor ◽  
Field Sensor
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