Free- and reference-layer magnetization modes versus in-plane magnetic field in a magnetic tunnel junction with perpendicular magnetic easy axis

2016 ◽  
Vol 94 (10) ◽  
Author(s):  
Hamid Mazraati ◽  
Tuan Q. Le ◽  
Ahmad A. Awad ◽  
Sunjae Chung ◽  
Eriko Hirayama ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Tunnel Junction ◽  
Easy Axis ◽  
Magnetic Tunnel Junction ◽  
Magnetic Easy Axis ◽  
Reference Layer ◽  
Layer Magnetization

scholarly journals Tunnel Magnetoresistance of Fe3O4/MgO/Fe Nanostructures

2011 ◽  
Vol 2011 ◽  
pp. 1-3
Author(s):  
S. G. Chigarev ◽  
E. M. Epshtein ◽  
I. V. Malikov ◽  
G. M. Mikhailov ◽  
P. E. Zilberman
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Magnetic Fields ◽  
Tunnel Junction ◽  
Magnetic Energy ◽  
Magnetic Tunnel Junction ◽  
Tunnel Magnetoresistance ◽  
Unidirectional Anisotropy ◽  
Layer Orientation ◽  
Layer Magnetization

A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation is considered. The junction magnetic energy is analyzed as a function of the angle between the layer magnetization vectors under various magnetic fields. The tunnel magnetoresistance is calculated as a function of the external magnetic field. In contrast with junctions with unidirectional anisotropy, a substantially lower magnetic field is required for the junction switching.

Process-induced damage and its recovery for a CoFeB–MgO magnetic tunnel junction with perpendicular magnetic easy axis

2014 ◽  
Vol 53 (10) ◽  
pp. 103001 ◽  
Author(s):  
Keizo Kinoshita ◽  
Hiroaki Honjo ◽  
Shunsuke Fukami ◽  
Hideo Sato ◽  
Kotaro Mizunuma ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Easy Axis ◽  
Magnetic Tunnel Junction ◽  
Magnetic Easy Axis

In-plane anisotropy of a nano-scaled magnetic tunnel junction with perpendicular magnetic easy axis

2015 ◽  
Vol 54 (4S) ◽  
pp. 04DM03 ◽  
Author(s):  
Eriko Hirayama ◽  
Shun Kanai ◽  
Koji Sato ◽  
Michihiko Yamanouchi ◽  
Hideo Sato ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Easy Axis ◽  
Magnetic Tunnel Junction ◽  
Plane Anisotropy ◽  
Magnetic Easy Axis

In-plane Anisotropy of a CoFeB-MgO Magnetic Tunnel Junction with Perpendicular Magnetic Easy Axis

2014 ◽  
Author(s):  
E. Hirayama ◽  
S. Kanai ◽  
K. Sato ◽  
M. Yamanouchi ◽  
H. Sato ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Easy Axis ◽  
Magnetic Tunnel Junction ◽  
Plane Anisotropy ◽  
Magnetic Easy Axis

L10-MnGa based magnetic tunnel junction for high magnetic field sensor

2017 ◽  
Vol 50 (28) ◽  
pp. 285002 ◽  
Author(s):  
X P Zhao ◽  
J Lu ◽  
S W Mao ◽  
Z F Yu ◽  
H L Wang ◽  
...  
Keyword(s):  
Magnetic Field ◽  
High Magnetic Field ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Magnetic Field Sensor ◽  
Field Sensor

scholarly journals Switching of perpendicularly polarized nanomagnets with spin orbit torque without an external magnetic field by engineering a tilted anisotropy

2015 ◽  
Vol 112 (33) ◽  
pp. 10310-10315 ◽  
Author(s):  
Long You ◽  
OukJae Lee ◽  
Debanjan Bhowmik ◽  
Dominic Labanowski ◽  
Jeongmin Hong ◽  
...  
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Data Storage ◽  
Easy Axis ◽  
Film Plane ◽  
The Other ◽  
Spin Orbit ◽  
Applied Current ◽  
Density Data ◽  
Magnetic Easy Axis

Spin orbit torque (SOT) provides an efficient way to significantly reduce the current required for switching nanomagnets. However, SOT generated by an in-plane current cannot deterministically switch a perpendicularly polarized magnet due to symmetry reasons. On the other hand, perpendicularly polarized magnets are preferred over in-plane magnets for high-density data storage applications due to their significantly larger thermal stability in ultrascaled dimensions. Here, we show that it is possible to switch a perpendicularly polarized magnet by SOT without needing an external magnetic field. This is accomplished by engineering an anisotropy in the magnets such that the magnetic easy axis slightly tilts away from the direction, normal to the film plane. Such a tilted anisotropy breaks the symmetry of the problem and makes it possible to switch the magnet deterministically. Using a simple Ta/CoFeB/MgO/Ta heterostructure, we demonstrate reversible switching of the magnetization by reversing the polarity of the applied current. This demonstration presents a previously unidentified approach for controlling nanomagnets with SOT.

A complementary magnetic field sensor using magnetic tunnel junction

2015 ◽  
Author(s):  
Ding-Yeong Wang ◽  
Keng-Ming Kuo ◽  
Cheng-Wei Chien ◽  
Shan-Yi Yang ◽  
Sheng-Huang Huang ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Magnetic Field Sensor ◽  
Field Sensor
Sign in / Sign up

Export Citation Format

Share Document