scholarly journals Research on a CMOS-MEMS Infrared Sensor with Reduced Graphene Oxide

Sensors ◽  
2020 ◽  
Vol 20 (14) ◽  
pp. 4007 ◽  
Author(s):  
Shu-Jung Chen ◽  
Bin Chen
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Ir Absorption ◽  
Long Distance ◽  
Ir Sensor ◽  
Reduced Graphene ◽  
Cmos Mems

In this research, a new application of reduced graphene oxide (rGO) for a complementary metal-oxide-semiconductor (CMOS)-MEMS infrared (IR) sensor and emitter is proposed. Thorough investigations of IR properties including absorption and emission were proceeded with careful calibration and measurement with a CMOS thermoelectric sensor. The thermocouples of the sensor consist of aluminum and n-polysilicon layers which are fabricated with the TSMC 0.35 μm CMOS process and MEMS post-process. In order to improve the adhesion of rGO, a sensing area at the center of the membrane is formed with an array of holes, which is easy for the drop-coating of rGO material upon the sensing region. To evaluate the performance of the IR sensor with rGO, different conditions of the IR thermal radiation experiments were arranged. The results show that the responsivity of our proposed CMOS-MEMS IR sensor with rGO increases by about 77% compared with the sensor without rGO. For different IR absorption incident angles, the measurement of field of view shows that the CMOS-MEMS IR sensor with rGO has a smaller view angle, which can be applied for the application of long-distance measuring. In addition, characteristics of the proposed thermopile are estimated and analyzed with comparisons to the available commercial sensors by the experiments.

scholarly journals Low-Concentration Ammonia Gas Sensors Manufactured Using the CMOS–MEMS Technique

Micromachines ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 92 ◽  
Author(s):  
Wei-Chun Shen ◽  
Po-Jen Shih ◽  
Yao-Chuan Tsai ◽  
Cheng-Chih Hsu ◽  
Ching-Liang Dai
Keyword(s):  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
X Ray Diffraction ◽  
Ammonia Gas ◽  
Oxidation Reduction ◽  
Sensing Material ◽  
Voltage Signal ◽  
Cmos Mems ◽  
Good Repeatability

This study describes the fabrication of an ammonia gas sensor (AGS) using a complementary metal oxide semiconductor (CMOS)–microelectromechanical system (MEMS) technique. The structure of the AGS features interdigitated electrodes (IDEs) and a sensing material on a silicon substrate. The IDEs are the stacked aluminum layers that are made using the CMOS process. The sensing material; polypyrrole/reduced graphene oxide (PPy/RGO), is synthesized using the oxidation–reduction method; and the material is characterized using an electron spectroscope for chemical analysis (ESCA), a scanning electron microscope (SEM), and high-resolution X-ray diffraction (XRD). After the CMOS process; the AGS needs post-processing to etch an oxide layer and to deposit the sensing material. The resistance of the AGS changes when it is exposed to ammonia. A non-inverting amplifier circuit converts the resistance of the AGS into a voltage signal. The AGS operates at room temperature. Experiments show that the AGS response is 4.5% at a concentration of 1 ppm NH3; and it exhibits good repeatability. The lowest concentration that the AGS can detect is 0.1 ppm NH3

scholarly journals A 0.35-μm CMOS-MEMS Oscillator for High-Resolution Distributed Mass Detection

Micromachines ◽  
2018 ◽  
Vol 9 (10) ◽  
pp. 484 ◽  
Author(s):  
Rafel Perelló-Roig ◽  
Jaume Verd ◽  
Joan Barceló ◽  
Sebastià Bota ◽  
Jaume Segura
Keyword(s):  
Low Cost ◽  
Electrical Characterization ◽  
Complementary Metal Oxide Semiconductor ◽  
Turnaround Time ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Mass Detection ◽  
Electrostatically Actuated ◽  
Resonator Structure ◽  
Cmos Mems

This paper presents the design, fabrication, and electrical characterization of an electrostatically actuated and capacitive sensed 2-MHz plate resonator structure that exhibits a predicted mass sensitivity of ~250 pg·cm−2·Hz−1. The resonator is embedded in a fully on-chip Pierce oscillator scheme, thus obtaining a quasi-digital output sensor with a short-term frequency stability of 1.2 Hz (0.63 ppm) in air conditions, corresponding to an equivalent mass noise floor as low as 300 pg·cm−2. The monolithic CMOS-MEMS sensor device is fabricated using a commercial 0.35-μm 2-poly-4-metal complementary metal-oxide-semiconductor (CMOS) process, thus featuring low cost, batch production, fast turnaround time, and an easy platform for prototyping distributed mass sensors with unprecedented mass resolution for this kind of devices.

High Toughness Inorganic Solid Electrolytes via the Use of Reduced Graphene-Oxide

2020 ◽  
Author(s):  
Christos E. Athanasiou ◽  
Mok Yun Jin ◽  
Cristina Ramirez ◽  
Nitin P. Padture ◽  
Brian W. Sheldon
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Solid Electrolytes ◽  
High Toughness ◽  
Reduced Graphene

Direct growth of thermally reduced graphene oxide on carbon fiber for enhanced mechanical strength

2020 ◽  
Vol 193 ◽  
pp. 108010
Author(s):  
Beom-Gon Cho ◽  
Shalik Ram Joshi ◽  
Jaekyo Lee ◽  
Young-Bin Park ◽  
Gun-Ho Kim
Keyword(s):  
Graphene Oxide ◽  
Carbon Fiber ◽  
Mechanical Strength ◽  
Reduced Graphene Oxide ◽  
Reduced Graphene ◽  
Direct Growth
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