scholarly journals Gamma Radiation-Induced Effects over an Optical Fiber Laser: Towards New Sensing Applications

Sensors ◽  
2020 ◽  
Vol 20 (11) ◽  
pp. 3017
Author(s):  
Rosa Ana Perez-Herrera ◽  
Andrei Stancalie ◽  
Pablo Cabezudo ◽  
Dan Sporea ◽  
Daniel Neguţ ◽  
...  
Keyword(s):  
Gamma Radiation ◽  
Output Power ◽  
Gamma Ray ◽  
Power Level ◽  
Ring Cavity ◽  
Output Power Level ◽  
Level Measurement ◽  
Sensing Applications ◽  
Radiation Induced ◽  
Different Doses

In the present work, the effect of gamma radiation on the performance of different types of erbium-doped fibers (EDFs) when they are used in a fiber ring cavity (FRC) configuration is studied. Several pieces of commercial EDF are gamma-ray irradiated with different doses to evaluate the output power variations over time. The influence of different doses, from 150 Gy to 1000 Gy, over the output power level measurement and their amplified spontaneous emission (ASE) are experimentally evaluated both in the C and L bands. By using an FRC configuration we can detect the presence of gamma radiation. We can also estimate the irradiation doses applied to EDFs by measuring the slope of the short-term emission power.

scholarly journals A 350-GHz Coupled Stack Oscillator with −0.8 dBm Output Power in 65-nm Bulk CMOS Process

Electronics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 1214
Author(s):  
Thanh Dat Nguyen ◽  
Jong-Phil Hong
Keyword(s):  
Output Power ◽  
Supply Voltage ◽  
Second Harmonic ◽  
Power Level ◽  
Cmos Technology ◽  
Negative Resistance ◽  
Output Power Level ◽  
Cmos Process ◽  
Frequency Selective ◽  
Oscillation Frequencies

This paper presents a push-push coupled stack oscillator that achieves a high output power level at terahertz (THz) wave frequency. The proposed stack oscillator core adopts a frequency selective negative resistance topology to improve negative transconductance at the fundamental frequency and a transformer connected between gate and drain terminals of cross pair transistors to minimize the power loss at the second harmonic frequency. Next, the phases and the oscillation frequencies between the oscillator cores are locked by employing an inductor of frequency selective negative resistance topology. The proposed topology was implemented in a 65-nm bulk CMOS technology. The highest measured output power is −0.8 dBm at 353.2 GHz while dissipating 205 mW from a 2.8 V supply voltage.

scholarly journals Hybrid Raman-Erbium Random Fiber Laser with a Half Open Cavity Assisted by Artificially Controlled Backscattering Fiber Reflectors

2021 ◽  
Author(s):  
R. A. Perez-Herrera ◽  
P. Roldan-Varona ◽  
M. Galarza ◽  
S. Sañudo-Lasagabaster ◽  
L. Rodriguez-Cobo ◽  
...  
Keyword(s):  
Fiber Laser ◽  
Output Power ◽  
Signal To Noise Ratio ◽  
Power Level ◽  
Laser Cavity ◽  
Gain Medium ◽  
Optical Signal ◽  
Open Cavity ◽  
Output Power Level ◽  
Erbium Doped

Abstract A hybrid Raman-erbium random fiber laser (RFL) with a half-open cavity assisted by chirped artificially controlled backscattering fiber reflectors (ACBFRs) is presented. A combination of 2.4 km of dispersion compensating fiber (DCF) with two highly erbium-doped fiber (EDF) pieces of 5 m length was used as gain medium. A single random laser emission line centered at 1553.8 nm with an output power level of -6.5 dBm and an optical signal to noise ratio (OSNR) of 47 dB was obtained when pumped at 37.5 dBm. A full width at half maximum (FHWM) of 1 nm and a 100% confidence level (CL) output power instability as low as 0.08 dB were measured. The utilization of the new laser cavity as a temperature and strain sensor is also experimentally studied.

scholarly journals Optimal Design and Comparison of High-Frequency Resonant and Non-Resonant Rotary Transformers

Energies ◽  
2020 ◽  
Vol 13 (4) ◽  
pp. 929 ◽  
Author(s):  
Koen Bastiaens ◽  
Dave C. J. Krop ◽  
Sultan Jumayev ◽  
Elena A. Lomonova
Keyword(s):  
Comparative Analysis ◽  
Optimal Design ◽  
Output Power ◽  
High Frequency ◽  
Power Level ◽  
Physical Design ◽  
Design Approach ◽  
Output Power Level ◽  
The Core ◽  
Series Resonant

This paper concerns the optimal design and comparative analysis of resonant and non-resonant high-frequency GaN-based rotating transformers. A multi-physical design approach is employed, in which magnetic, electrical, and thermal models are coupled. The results are verified by experiments. Two different optimization objectives are considered; firstly, the efficiency of two standard core geometries is maximized for a required output power level. Secondly, a geometrical optimization is performed, such that the core inertia is minimized for the desired output power level. The results of both design optimizations have shown large improvements in terms of output power and core inertia as a result of applying series–series resonant compensation.

A high-power solid state amplifier for Galileo satellite system exploiting European GaN technology

2016 ◽  
Vol 8 (4-5) ◽  
pp. 691-702 ◽  
Author(s):  
Rocco Giofré ◽  
Paolo Colantonio ◽  
Elisa Cipriani ◽  
Franco Giannini ◽  
Laura Gonzalez ◽  
...  
Keyword(s):  
Solid State ◽  
Output Power ◽  
High Power ◽  
Continuous Wave ◽  
Power Level ◽  
Operating Mode ◽  
Satellite System ◽  
Output Power Level ◽  
Gain Compression ◽  
Satellite Navigation System

This paper describes the development of an L-Band (f0= 1.575 GHz) high power and efficient solid state power amplifier (SSPA) designed for the European satellite navigation system (i.e. Galileo). The amplifier, developed in the framework of the European Project named SLOGAN, exploits the GH50-10 GaN technology available at United Monolithic Semiconductor foundry. The aim of the project is to offer, using as much as possible European technologies, a valid alternative to replace traveling wave tube amplifiers with more compact and reliable systems. All the SSPA functionalities, i.e. power supply, power conditioning and radio frequency amplification, are integrated in the developed architecture and accommodated in a single box with limited volume and mass. The required output power level is achieved by parallelizing several GaN die power bars of 12 and/or 25.6 mm. In continuous wave operating mode, the overall SSPA delivers an output power higher than 250 W at less than 2 dB of gain compression in the whole E1-band. Moreover, the registered gain and efficiency are higher than 67 dB and 54%, respectively.

scholarly journals Oryzalin and Gamma Radiation Induced Polyploidization in Garden Balsam Plants (Impatiens balsamina L.) In Vitro

2017 ◽  
Vol 5 (1) ◽  
pp. 01-05 ◽  
Author(s):  
Made Defiani ◽  
Ida Astarini ◽  
Eniek Kriswiyanti
Keyword(s):  
Gamma Radiation ◽  
Gamma Ray ◽  
In Vitro Study ◽  
Leaf Section ◽  
Plant Variation ◽  
In Vitro Methods ◽  
Impatiens Balsamina ◽  
Radiation Induced ◽  
New Type

The aim of the research was to create genetic variation on garden balsam using oryzalin and Gamma radiation. Mutagenic agent may improve plant variation. Garden balsam seeds were treated by oryzalin (0%, 0.01%, 0.02%) then the seedlings were planted in the field four times to gain seeds generation M4. Seedlings of M4 (7 days of age) were radiated by gamma ray 60Co (0, 5, 10, 15 Gy) and planted in the field to collect seeds for in vitro study to induce a new type of mutant plant. In vitro methods was conducted to achieved rapid micropropagation of Impatiens balsamina L. mutant plants. Growth percentage of seedlings reached 90% by gibberellin 0.01 ppm. Leaf section used for explant and cultured in MS media enriched by 0.5 ppm NAA and 0.5 ppm BAP aseptically. Shoots were regenerated on 6 weeks after cultured however some shoots become vitrification. Number of chromosome varied (mixoploid) on treated plants (M5). Form of secondary metabolites ( alkaloids and terpenoids ) in the roots extract was not changed by oryzalin and gamma radiation. Mixoploid explants showed variation in morphology and some treatments only had little shoots and a treatment has vigorous roots. Control plants have shoot and callus.

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