Pump Laser Automatic Signal Control for Erbium-Doped Fiber Amplifier Gain, Noise Figure, and Output Spectral Power

2019 ◽  
Vol 0 (0) ◽  
Author(s):  
I. S. Amiri ◽  
Ahmed Nabih Zaki Rashed ◽  
P. Yupapin
Keyword(s):  
Noise Figure ◽  
Spectral Power ◽  
Power Level ◽  
Fiber Amplifier ◽  
Pump Laser ◽  
Output Power Level ◽  
Signal Control ◽  
Erbium Doped Fiber Amplifier ◽  
Erbium Doped ◽  
Amplifier Gain

AbstractThis paper has simulated the pump laser automatic signal control for erbium-doped fiber amplifier gain, noise figure, and output spectral power. Signal gain and noise figure are deeply studied in relation to laser pump power variations at operating pumping wavelengths of 980 nm and 1,480 nm for previous and proposed models. Similar to the study of the light signal to noise ratio, output power level and maximum Q factor are also simulated versus EDFA amplifier length at pumping power of 500 mW and different pumping wavelength by using the proposed model. The obtained results are better by using a pumping wavelength of 1,480 nm than a pumping wavelength of 980 nm. The optimum EDFA amplifier is 5 m, which gives better performance than other amplifier lengths.

scholarly journals A 350-GHz Coupled Stack Oscillator with −0.8 dBm Output Power in 65-nm Bulk CMOS Process

Electronics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 1214
Author(s):  
Thanh Dat Nguyen ◽  
Jong-Phil Hong
Keyword(s):  
Output Power ◽  
Supply Voltage ◽  
Second Harmonic ◽  
Power Level ◽  
Cmos Technology ◽  
Negative Resistance ◽  
Output Power Level ◽  
Cmos Process ◽  
Frequency Selective ◽  
Oscillation Frequencies

This paper presents a push-push coupled stack oscillator that achieves a high output power level at terahertz (THz) wave frequency. The proposed stack oscillator core adopts a frequency selective negative resistance topology to improve negative transconductance at the fundamental frequency and a transformer connected between gate and drain terminals of cross pair transistors to minimize the power loss at the second harmonic frequency. Next, the phases and the oscillation frequencies between the oscillator cores are locked by employing an inductor of frequency selective negative resistance topology. The proposed topology was implemented in a 65-nm bulk CMOS technology. The highest measured output power is −0.8 dBm at 353.2 GHz while dissipating 205 mW from a 2.8 V supply voltage.

A Highly-Integrated, Switchless and Baluns-Embedded Transceiver with a Differential Structure for C-Band Radar Application

2019 ◽  
Vol 29 (10) ◽  
pp. 2050160
Author(s):  
Guoxiao Cheng ◽  
Zhiqun Li ◽  
Zhennan Li ◽  
Zengqi Wang ◽  
Meng Zhang
Keyword(s):  
Output Power ◽  
Noise Figure ◽  
Low Noise ◽  
Cmos Process ◽  
Image Rejection ◽  
Rf Switch ◽  
Differential Structure ◽  
Noise Amplifier ◽  
Image Rejection Ratio ◽  
Better Than

This paper presents a highly-integrated transceiver with a differential structure for C-band (5–6[Formula: see text]GHz) radar application using a switchless and baluns-embedded configuration. To reduce the noise figure (NF) in receiver (Rx) mode and enhance the output power in transmitter (Tx) mode, the balun at RF port is embedded into the low-noise amplifier (LNA) and the power amplifier (PA), respectively. Besides, the RF switch is removed by designing the matching networks that both LNA and PA can share. The same topology is also adopted at the IF port. To achieve a high image rejection ratio (IRR), a Hartley architecture using polyphase filters (PPFs) is adopted. The proposed transceiver has been implemented in 1P6M 0.18-[Formula: see text]m CMOS process. The receiver achieves 6.9-dB NF, [Formula: see text]7.5-dBm IIP3 and 26.3-dB gain with three-step digital gain controllability. Also the measured IRR is better than 41[Formula: see text]dBc. The transmitter achieves 9.6-dBm output power and 19.2-dB gain. The chip consumes 106[Formula: see text]mA in the Rx mode and 141[Formula: see text]mA in the Tx mode from the 3.3-V power supply.

scholarly journals Hybrid Raman-Erbium Random Fiber Laser with a Half Open Cavity Assisted by Artificially Controlled Backscattering Fiber Reflectors

2021 ◽  
Author(s):  
R. A. Perez-Herrera ◽  
P. Roldan-Varona ◽  
M. Galarza ◽  
S. Sañudo-Lasagabaster ◽  
L. Rodriguez-Cobo ◽  
...  
Keyword(s):  
Fiber Laser ◽  
Output Power ◽  
Signal To Noise Ratio ◽  
Power Level ◽  
Laser Cavity ◽  
Gain Medium ◽  
Optical Signal ◽  
Open Cavity ◽  
Output Power Level ◽  
Erbium Doped

Abstract A hybrid Raman-erbium random fiber laser (RFL) with a half-open cavity assisted by chirped artificially controlled backscattering fiber reflectors (ACBFRs) is presented. A combination of 2.4 km of dispersion compensating fiber (DCF) with two highly erbium-doped fiber (EDF) pieces of 5 m length was used as gain medium. A single random laser emission line centered at 1553.8 nm with an output power level of -6.5 dBm and an optical signal to noise ratio (OSNR) of 47 dB was obtained when pumped at 37.5 dBm. A full width at half maximum (FHWM) of 1 nm and a 100% confidence level (CL) output power instability as low as 0.08 dB were measured. The utilization of the new laser cavity as a temperature and strain sensor is also experimentally studied.

scholarly journals GaN-based single-chip frontend for next-generation X-band AESA systems

2018 ◽  
Vol 10 (5-6) ◽  
pp. 660-665 ◽  
Author(s):  
Patrick Schuh ◽  
Hardy Sledzik ◽  
Rolf Reber
Keyword(s):  
Generation X ◽  
Noise Figure ◽  
Power Level ◽  
Input Power ◽  
Low Noise ◽  
Next Generation ◽  
Frequency Range ◽  
Single Chip ◽  
Large Signal ◽  
Integration Density

AbstractA next generation of active electronically scanned array (AESA) antennas will be challenged with the need for lower size, weight, power, and cost. This leads to enhanced demands especially with regard to the integration density of the radio frequency-part inside aT/Rmodule. The semiconductor material GaN has proven its capacity for high-power amplifiers (HPA), robust receive components as well as switch components for separation of transmit and receive mode. This paper will describe the design and measurement results of a GaN-based single-chipT/Rmodule frontend (HPA, low noise anplifier, and single-pole double-throw (SPDT)) using UMS GH25 technology and covering the frequency range from 8 GHz to 12 GHz. The key performance parameters of the frontend are 13 W minimum transmit (TX) output power over the whole frequency range with peak power up to 17 W. The frontend in receive (RX) mode has a noise figure below 3.2 dB over the whole frequency range, and can survive more than 5 W input power. The large signal insertion loss of the used SPDT is below 0.9 dB at 43 dBm input power level.

scholarly journals GaN low-noise X-band MMIC amplifier.

2021 ◽  
Vol 2021 (2) ◽  
Author(s):  
E. Kudabay ◽  
◽  
A. Salikh ◽  
V.A. Moseichuk ◽  
A. Krivtsun ◽  
...  
Keyword(s):  
Output Power ◽  
Integrated Circuit ◽  
Noise Figure ◽  
Supply Voltage ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Common Source ◽  
High Electron ◽  
Monolithic Integrated Circuit ◽  
X Band

The purpose of this paper is to design a microwave monolithic integrated circuit (MMIC) for low noise amplifier (LNA) X-band (7-12 GHz) based on technology of gallium nitride (GaN) high electron mobility transistor (HEMT) with a T-gate, which has 100 nm width, on a silicon (Si) semi-insulating substrate of the OMMIC company. The amplifier is based on common-source transistors with series feedback, which was formed by high-impedance transmission line, and with parallel feedback to match noise figure and power gain. The key characteristics of an LNA are noise figure and gain. However, in this paper, it was decided to design the LNA, which should have a good margin in terms of input and output power. As a result, GaN technology was chosen, which has a higher noise figure compared to other technologies, but eliminates the need for an input power limiter, which in turn significantly increases the overall noise figure. As a result LNA MMIC was developed with the following characteristics: noise figure less than 1.6 dB, small-signal gain more than 20 dB, return loss better than -13 dB and output power more than 19 dBm with 1 dB compression in the range from 7 to 12 GHz in dimensions 2x1.5 mm², which has a supply voltage of 8 V and a current consumption of less than 70 mA. However, it should be said that LNA was only modeled in the AWR DE.

scholarly journals Optimal Design and Comparison of High-Frequency Resonant and Non-Resonant Rotary Transformers

Energies ◽  
2020 ◽  
Vol 13 (4) ◽  
pp. 929 ◽  
Author(s):  
Koen Bastiaens ◽  
Dave C. J. Krop ◽  
Sultan Jumayev ◽  
Elena A. Lomonova
Keyword(s):  
Comparative Analysis ◽  
Optimal Design ◽  
Output Power ◽  
High Frequency ◽  
Power Level ◽  
Physical Design ◽  
Design Approach ◽  
Output Power Level ◽  
The Core ◽  
Series Resonant

This paper concerns the optimal design and comparative analysis of resonant and non-resonant high-frequency GaN-based rotating transformers. A multi-physical design approach is employed, in which magnetic, electrical, and thermal models are coupled. The results are verified by experiments. Two different optimization objectives are considered; firstly, the efficiency of two standard core geometries is maximized for a required output power level. Secondly, a geometrical optimization is performed, such that the core inertia is minimized for the desired output power level. The results of both design optimizations have shown large improvements in terms of output power and core inertia as a result of applying series–series resonant compensation.

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