scholarly journals Surface Wave Enhanced Sensing in the Terahertz Spectral Range: Modalities, Materials, and Perspectives

Sensors ◽  
2019 ◽  
Vol 19 (24) ◽  
pp. 5505 ◽  
Author(s):  
Mathieu Poulin ◽  
Steven Giannacopoulos ◽  
Maksim Skorobogatiy
Keyword(s):  
Surface Wave ◽  
Spectral Range ◽  
High Performance ◽  
Terahertz Frequency ◽  
Wave Localization ◽  
Artificial Materials ◽  
Naturally Occurring ◽  
High K ◽  
Non Destructive ◽  
Plasmon Polaritons

The terahertz spectral range (frequencies of 0.1–10 THz) has recently emerged as the next frontier in non-destructive imaging and sensing. Here, we review amplitude-based and phase-based sensing modalities in the context of the surface wave enhanced sensing in the terahertz frequency band. A variety of surface waves are considered including surface plasmon polaritons on metals, semiconductors, and zero gap materials, surface phonon polaritons on polaritonic materials, Zenneck waves on high-k dielectrics, as well as spoof surface plasmons and spoof Zenneck waves on structured interfaces. Special attention is paid to the trade-off between surface wave localization and sensor sensitivity. Furthermore, a detailed theoretical analysis of the surface wave optical properties as well as the sensitivity of sensors based on such waves is supplemented with many examples related to naturally occurring and artificial materials. We believe our review can be of interest to scientists pursuing research in novel high-performance sensor designs operating at frequencies beyond the visible/IR band.

Sub-20nm Device Voltage-Sensitive SRAM Characterization and Failure Analysis

2018 ◽  
Author(s):  
Seng Nguon Ting ◽  
Hsien-Ching Lo ◽  
Donald Nedeau ◽  
Aaron Sinnott ◽  
Felix Beaudoin
Keyword(s):  
Failure Analysis ◽  
High Performance ◽  
Yield Loss ◽  
Technology Development ◽  
High Density ◽  
High K ◽  
Yield Learning ◽  
Oxide Deposition ◽  
Edge Profile ◽  
High K Dielectric

Abstract With rapid scaling of semiconductor devices, new and more complicated challenges emerge as technology development progresses. In SRAM yield learning vehicles, it is becoming increasingly difficult to differentiate the voltage-sensitive SRAM yield loss from the expected hard bit-cells failures. It can only be accomplished by extensively leveraging yield, layout analysis and fault localization in sub-micron devices. In this paper, we describe the successful debugging of the yield gap observed between the High Density and the High Performance bit-cells. The SRAM yield loss is observed to be strongly modulated by different active sizing between two pull up (PU) bit-cells. Failure analysis focused at the weak point vicinity successfully identified abnormal poly edge profile with systematic High k Dielectric shorts. Tight active space on High Density cells led to limitation of complete trench gap-fill creating void filled with gate material. Thanks to this knowledge, the process was optimized with “Skip Active Atomic Level Oxide Deposition” step improving trench gap-fill margin.

Interfacial polarization-induced high-k polymer dielectric film for high-performance triboelectric devices

Nano Energy ◽  
2021 ◽  
Vol 82 ◽  
pp. 105697
Author(s):  
Minsoo P. Kim ◽  
Chang Won Ahn ◽  
Youngsu Lee ◽  
Kyoungho Kim ◽  
Jonghwa Park ◽  
...  
Keyword(s):  
High Performance ◽  
Dielectric Film ◽  
Interfacial Polarization ◽  
Polymer Dielectric ◽  
High K

32nm gate-first high-k/metal-gate technology for high performance low power applications

2008 ◽  
Author(s):  
C. H. Diaz ◽  
K. Goto ◽  
H.T. Huang ◽  
Yuri Yasuda ◽  
C.P. Tsao ◽  
...  
Keyword(s):  
Low Power ◽  
High Performance ◽  
Metal Gate ◽  
High K

Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

2013 ◽  
Vol 1538 ◽  
pp. 291-302
Author(s):  
Edward Yi Chang ◽  
Hai-Dang Trinh ◽  
Yueh-Chin Lin ◽  
Hiroshi Iwai ◽  
Yen-Ku Lin
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Speed ◽  
High Performance ◽  
Gate Oxide ◽  
Chemical Cleaning ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Cleaning Methods

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

High Performance Metal Gate CMOSFETs with Aggressively Scaled Hf-Based High-k

2019 ◽  
Vol 1 (5) ◽  
pp. 609-623 ◽  
Author(s):  
Seung-Chul Song ◽  
G. L. Zhang ◽  
S. H. Bae ◽  
P. Kirsch ◽  
P. Majhi ◽  
...  
Keyword(s):  
High Performance ◽  
Metal Gate ◽  
High K

scholarly journals High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure

2012 ◽  
Vol 7 (1) ◽  
pp. 431 ◽  
Author(s):  
Szu-Hung Chen ◽  
Wen-Shiang Liao ◽  
Hsin-Chia Yang ◽  
Shea-Jue Wang ◽  
Yue-Gie Liaw ◽  
...  
Keyword(s):  
High Performance ◽  
Gate Dielectric ◽  
High K ◽  
High K Gate Dielectric

scholarly journals High performance liquid analyte sensing based on Bloch surface wave resonances in the spectral domain

2022 ◽  
Vol 145 ◽  
pp. 107492
Author(s):  
P. Hlubina ◽  
M. Gryga ◽  
D. Ciprian ◽  
P. Pokorny ◽  
L. Gembalova ◽  
...  
Keyword(s):  
Surface Wave ◽  
High Performance ◽  
Spectral Domain ◽  
Bloch Surface Wave

Scalable, High-Performance Printed InOx Transistors Enabled by Ultraviolet-Annealed Printed High-k AlOx Gate Dielectrics

2018 ◽  
Vol 10 (43) ◽  
pp. 37277-37286 ◽  
Author(s):  
William J. Scheideler ◽  
Matthew W. McPhail ◽  
Rajan Kumar ◽  
Jeremy Smith ◽  
Vivek Subramanian
Keyword(s):  
High Performance ◽  
Gate Dielectrics ◽  
High K
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