scholarly journals Sensitivity Improvement to Active Piezoresistive AFM Probes Using Focused Ion Beam Processing

Sensors ◽  
2019 ◽  
Vol 19 (20) ◽  
pp. 4429 ◽  
Author(s):  
Kunicki ◽  
Angelov ◽  
Ivanov ◽  
Gotszalk ◽  
Rangelow

This paper presents a comprehensive modeling and experimental verification of active piezoresistive atomic force microscopy (AFM) cantilevers, which are the technology enabling high-resolution and high-speed surface measurements. The mechanical structure of the cantilevers integrating Wheatstone piezoresistive was modified with the use of focused ion beam (FIB) technology in order to increase the deflection sensitivity with minimal influence on structure stiffness and its resonance frequency. The FIB procedure was conducted based on the finite element modeling (FEM) methods. In order to monitor the increase in deflection sensitivity, the active piezoresistive cantilever was deflected using an actuator integrated within, which ensures reliable and precise assessment of the sensor properties. The proposed procedure led to a 2.5 increase in the deflection sensitivity, which was compared with the results of the calibration routine and analytical calculations.

2012 ◽  
Vol 1421 ◽  
Author(s):  
Russell J. Bailey ◽  
Remco Geurts ◽  
Debbie J. Stokes ◽  
Frank de Jong ◽  
Asa H. Barber

ABSTRACTThe mechanical behavior of nanocomposites is critically dependent on their structural composition. In this paper we use Focused Ion Beam (FIB) microscopy to prepare surfaces from a layered polymer nanocomposite for investigation using phase contrast atomic force microscopy (AFM). Phase contrast AFM provides mechanical information on the surface examined and, by combining with the sequential cross-sectioning of FIB, can extend the phase contract AFM into three dimensions.


2009 ◽  
Vol 1228 ◽  
Author(s):  
Hao Wang ◽  
Greg C. Hartman ◽  
Joshua Williams ◽  
Jennifer L. Gray

AbstractThere are many factors that have the potential to limit significant advances in device technology. These include the ability to arrange materials at shrinking dimensions and the ability to successfully integrate new materials with better properties or new functionalities. To overcome these limitations, the development of advanced processing methods that can organize various combinations of materials at nano-scale dimensions with the necessary quality and reliability is required. We have explored using a gallium focused ion beam (FIB) as a method of integrating highly mismatched materials with silicon by creating template patterns directly on Si with nanoscale resolution. These templates are potentially useful as a means of locally controlling topography at nanoscale dimensions or as a means of locally implanting Ga at specific surface sites. We have annealed these templates in vacuum to study the effects of ion dosage on local Ga concentration and topography. We have also investigated the feasibility of creating Ga nanodots using this method that could eventually be converted to GaN through a nitridation process. Atomic force microscopy and electron microscopy characterization of the resulting structures are shown for a variety of patterning and processing conditions.


1999 ◽  
Vol 562 ◽  
Author(s):  
Stephan Grunow ◽  
Deda Diatezua ◽  
Soon-Cheon Seo ◽  
Timothy Stoner ◽  
Alain E. KaloyerosI

ABSTRACTAs computer chip technologies evolve from aluminum-based metallization schemes to their copper-based counterparts, Electrochemical Deposition (ECD) is emerging as a viable deposition technique for copper (Cu) interconnects. This paper presents the results of a first-pass study to examine the underlying mechanisms that control ECD Cu nucleation, growth kinetics, and post-deposition microstructure evolution (self-annealing), leading to the development and optimization of an ECD Cu process recipe for sub-quarter-micron device generations. The influence of bath composition, current waveform, type and texture of Cu seed layer, and device feature size (scaling effect) on the evolution of film texture, morphology, electrical properties, and fill characteristics was investigated using a manufacturing-worthy ReynoldsTech 8″ wafer plating tool. Resulting films were analyzed by X-ray Diffraction (XRD), four-point resistivity probe, Focused-Ion-Beam Scanning Electron Microscopy (FIB-SEM), and Atomic Force Microscopy (AFM). These investigations identified an optimized process window for the complete fill of aggressive device structures with pure Cu with resistivity ∼ 2.0 μΩ-cm and smooth surface morphology.


Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1493 ◽  
Author(s):  
Tan Sui ◽  
Jiří Dluhoš ◽  
Tao Li ◽  
Kaiyang Zeng ◽  
Adrian Cernescu ◽  
...  

Peritubular dentine (PTD) and intertubular dentine (ITD) were investigated by 3D correlative Focused Ion Beam (FIB)-Scanning Electron Microscopy (SEM)-Energy Dispersive Spectroscopy (EDS) tomography, tapping mode Atomic Force Microscopy (AFM) and scattering-type Scanning Near-Field Optical Microscopy (s-SNOM) mapping. The brighter appearance of PTD in 3D SEM-Backscattered-Electron (BSE) imaging mode and the corresponding higher grey value indicate a greater mineral concentration in PTD (~160) compared to ITD (~152). However, the 3D FIB-SEM-EDS reconstruction and high resolution, quantitative 2D map of the Ca/P ratio (~1.8) fail to distinguish between PTD and ITD. This has been further confirmed using nanoscale 2D AFM map, which clearly visualised biopolymers and hydroxyapatite (HAp) crystallites with larger mean crystallite size in ITD (32 ± 8 nm) than that in PTD (22 ± 3 nm). Correlative microscopy reveals that the principal difference between PTD and ITD arises primarily from the nanoscale packing density of the crystallites bonded together by thin biopolymer, with moderate contribution from the chemical composition difference. The structural difference results in the mechanical properties variation that is described by the parabolic stiffness-volume fraction correlation function introduced here. The obtained results benefit a microstructure-based mechano-chemical model to simulate the chemical etching process that can occur in human dental caries and some of its treatments.


2003 ◽  
Vol 792 ◽  
Author(s):  
B. Krejca ◽  
S.R. Vangala ◽  
K. Krishnaswami ◽  
R. Kolluru ◽  
M. C. Ospina ◽  
...  

ABSTRACTAntimonide-based compound semiconductors have emerged as the materials of choice for fabricating high-speed low-power electronics and electro-optics for applications requiring miniaturization and portability. In this work Br-IBAE is shown to be an anisotropic antimonide etching technique that is capable of generating novel structures as well as performing standard etching tasks. When etching less than optimally chemical-mechanical polished (111) InSb wafers, sharp-tipped cone structures with tip radii of the order of less than 60 nm are produced. These structures may be ideally suited for the development of field-emission devices, where small tip radii are required for useful emission currents. The anisotropic nature of the IBAE technique allows one to etch channels in the surface at angles up to 70° from perpendicular, making the fabrication of microbeams feasible. Using an angled sample holder, the first etch undercuts the masked beams from one side. The sample is then removed and realigned so as to undercut the beams from the other side. The triangular shaped microbeams are left suspended from either one or both ends. Using a combination of atomic force microscopy and mechanical engineering beam analysis techniques, the elastic parameters of the material can be measured. The microbeams can be aligned along various directions on the surface to investigate anisotropic characteristics. This is particularly important for determining the mechanical characteristics of materials that can only be grown in thin epitaxial layers, such as quaternary antimonide-based compound semiconductors.


2005 ◽  
Vol 38 (6) ◽  
pp. 2368-2375 ◽  
Author(s):  
Nick Virgilio ◽  
Basil D. Favis ◽  
Marie-France Pépin ◽  
Patrick Desjardins ◽  
Gilles L'Espérance

2004 ◽  
Vol 811 ◽  
Author(s):  
Yingge Du ◽  
Surajit Atha ◽  
Robert Hull ◽  
James F. Groves ◽  
Igor Lyubinetsky ◽  
...  

ABSTRACTA method has been developed for specifying the growth location of Cu2O nanodotson SrTiO3 (100) substrates. Growth location has been specified by using a focused ion beam (FIB) to modify microscopic and nanoscopic regions of the SrTiO3substrate prior to Cu2O deposition. Deposition onto the modified regions under carefully selected process conditions has generated nanodot growth at the edge of microscopic FIB-induced features and on top of nanoscopic FIB-induced features. For this work, an array of evenly spaced FIB implants was first patterned into several regions of each substrate. Within each sub-division of the array, the FIB implants were identical in Ga+ energy and dosage and implant diameter and spacing. After FIB surface modification and subsequent in-situ substrate cleaning, Cu2O nanodots were synthesized on the patterned SrTiO3 substrates using oxygen plasma assisted molecular beam epitaxy. The substrates and nanodots were characterized using atomic force microscopy at various stages of the process; in-situ X-ray photoelectron spectroscopy and Auger electron spectroscopy analysis demonstrated that the final stoichiometry of the nanodots was Cu2O. The photocatalytic decomposition of water on Cu2O under visible light irradiation has been reported. If the Cu2O can be located in the form ofislands on a carefully selected substrate, then it could be possible to greatly enhance the efficiency of the photochemical process.


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