scholarly journals Detection of Cu2+ Ions with GGH Peptide Realized with Si-Nanoribbon ISFET

Sensors ◽  
2019 ◽  
Vol 19 (18) ◽  
pp. 4022 ◽  
Author(s):  
Olena Synhaivska ◽  
Yves Mermoud ◽  
Masoud Baghernejad ◽  
Israel Alshanski ◽  
Mattan Hurevich ◽  
...  
Keyword(s):  
Field Effect Transistor ◽  
Copper Ions ◽  
Specific Binding ◽  
Cost Effective ◽  
Detection Methods ◽  
Ligand Interaction ◽  
Amine Groups ◽  
Effect Transistor ◽  
Pre Treatment ◽  
Insight Into

The presence of heavy metal ions such as copper in the human body at certain concentrations and specific conditions can lead to the development of different diseases. The currently available analytical detection methods remain expensive, time-consuming, and often require sample pre-treatment. The development of specific and quantitative, easy-in-operation, and cost-effective devices, capable of monitoring the level of Cu2+ ions in environmental and physiological media, is necessary. We use silicon nanoribbon (SiNR) ion-sensitive field effect transistor (ISFET) devices modified with a Gly–Gly–His peptide for the detection of copper ions in a large concentration range. The specific binding of copper ions causes a conformational change of the ligand, and a deprotonation of secondary amine groups. By performing differential measurements, we gain a deeper insight into the details of the ion–ligand interaction. We highlight in particular the importance of considering non-specific interactions to explain the sensors’ response.

scholarly journals Printed, cost-effective and stable poly(3-hexylthiophene) electrolyte-gated field-effect transistors

2020 ◽  
Vol 8 (43) ◽  
pp. 15312-15321
Author(s):  
Davide Blasi ◽  
Fabrizio Viola ◽  
Francesco Modena ◽  
Axel Luukkonen ◽  
Eleonora Macchia ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Cost Effective ◽  
Continuous Operation ◽  
Large Area ◽  
Ink Jet ◽  
Effect Transistor

A large-area processable ink-jet-printed poly(3-hexylthiophene) electrolyte-gated field-effect transistor, designed for bioelectronic applications, is proven to be stable for one week of continuous operation.

scholarly journals Planar to Trench: Short Circuit Capability Analysis of 1.2 kV SiC MOSFETs

2018 ◽  
Vol 924 ◽  
pp. 782-785 ◽  
Author(s):  
Bhagyalakshmi Kakarla ◽  
Thomas Ziemann ◽  
Selamnesh Nida ◽  
Elias Doenni ◽  
Ulrike Grossner
Keyword(s):  
Room Temperature ◽  
Field Effect Transistor ◽  
State Of The Art ◽  
Short Circuit ◽  
Metal Oxide Semiconductor ◽  
Operating Conditions ◽  
Oxide Semiconductor ◽  
Capability Analysis ◽  
Effect Transistor ◽  
Insight Into

This paper presents an insight into the short circuit (SC) capability of Rohm’s discrete 1.2 kV, 80 mΩ state-of-the-art silicon carbide (SiC) double trench metal-oxide-semiconductor field effect transistor (MOSFET). SC measurements are performed to compare the behavior of Wolfspeed’s similarly rated 1.2 kV, 80 mΩ planar MOSFET with the Rohm trench devices. Short circuit withstand time (SCWT) of both designs under nominal operating conditions at room temperature is measured by performing destructive SC tests.

Double Control Gate Field-Effect Transistor for Area Efficient and Cost Effective Applications

2014 ◽  
Vol 35 (11) ◽  
pp. 1073-1075 ◽  
Author(s):  
Fabio Alessio Marino ◽  
Antonio Stocco ◽  
Marco Barbato ◽  
Enrico Zanoni ◽  
Gaudenzio Meneghesso
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Cost Effective ◽  
Effect Transistor ◽  
Area Efficient

Detection of Lectins using Glyco-Functionalized Nanosensors

2012 ◽  
Vol 1451 ◽  
pp. 191-196 ◽  
Author(s):  
Yanan Chen ◽  
Harindra Vedala ◽  
Gregg P. Kotchey ◽  
Aymeric Audfray ◽  
Samy Cecioni ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Specific Binding ◽  
Nir Spectroscopy ◽  
Initial Study ◽  
Carbon Nanostructure ◽  
Force Microscopy ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Bacterial Lectins

ABSTRACTWe have used single-walled carbon nanotube field-effect transistor (SWNT-FET) and chemically converted graphene field-effect transistor (CCG-FET) devices to probe the interactions between carbohydrates and their recognition lectins. Porphyrin- and pyrene-based glycoconjugates were used as receptor molecules and the target lectins were two bacterial lectins that present different carbohydrate preference, namely PA-IL, PA-IIL from Pseudomonas aeruginosa and a plant lectin Concanavalin A. The specific binding between lectin and carbohydrate can be transduced to the change in FET device conductance. An initial study with SWNT-FET noncovalently functionalized with porphyrin-based glycoconjugates showed both good selectivity and sensitivity. To compare SWNT and CCG performance, pyrene- and porphyrin-based glycoconjugates were functionalized noncovalently on the surface of CCG-FET and SWNT-FET devices, which were then treated with non-specific and specific lectins. The responses were compared and rationalized using computer-aided models of carbon nanostructure/glycoconjugate interactions. Fluorescence microscopy, atomic force microscopy, UV-vis-NIR spectroscopy and Isothermal titration microcalorimetry (ITC) measurements were used to confirm the electrical results.

scholarly journals ZnO Nanowire Field Effect Transistor for Biosensing: A Review

2019 ◽  
Vol 60 ◽  
pp. 94-112 ◽  
Author(s):  
Nonofo M.J. Ditshego
Keyword(s):  
Mass Production ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Specific Binding ◽  
Zno Nanowire ◽  
Long Time ◽  
Effect Transistor ◽  
Doped Zno ◽  
P Type ◽  
Intense Research

The last 19 years have seen intense research made on zinc oxide (ZnO) material mainly due to the ability of converting the natural n-type material into p-type. For a long time, the p-type state was impossible to attain and maintain. The review focuses on ways of improving the doped ZnO material which acts as a channel for nanowire field effect transistor (NWFET) and biosensor. The biosensor has specific binding which is called functionalisation achieved by attaching a variety of compounds on the designated sensing area. Reference electrodes and buffers are used as controllers. Top-down fabrication processes are preferred over bottom-up because they pave way for mass production. Different growth techniques are reviewed and discussed. Strengths and weaknesses of the FET and sensor are also reviewed.

Potentiometric Detection of DNA Molecules Hybridization Using Gene Field Effect Transistor and Intercalator

2003 ◽  
Vol 782 ◽  
Author(s):  
Toshiya Sakata ◽  
Hidenori Otsuka ◽  
Yuji Miyahara
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Specific Binding ◽  
Gate Insulator ◽  
Snp Analysis ◽  
Hybridization Temperature ◽  
Double Stranded Dna ◽  
Oligonucleotide Hybridization ◽  
Allele Specific ◽  
Effect Transistor

ABSTRACTWe propose a new concept of a gene field effect transistor (FET) for detection of allele specific oligonucleotide hybridization, which is in principle based on charge density change at the gate insulator. The electrical characteristics of the gene FET were found to shift after specific binding of biomolecules at the surface of the gate insulator. Allele specific oligonucleotide hybridization and reaction between double-stranded DNA and intercalator were successfully detected with gene FETs because they have intrinsic charges in an aqueous solution. Ability to discriminate single nucleotide polymorphism (SNP) was also examined using the gene FET. Our results show that control of hybridization temperature and utilization of intercalator lead to more precise SNP analysis using the gene FET.

Insight into criteria for design optimisation of bistable field effect transistor (BISFET)

1994 ◽  
Vol 30 (10) ◽  
pp. 822-823
Author(s):  
J.J. Ojha ◽  
J.G. Simmons ◽  
A.J. SpringThorpe ◽  
R.S. Mand
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Design Optimisation ◽  
Effect Transistor ◽  
Insight Into
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