Insight into criteria for design optimisation of bistable field effect transistor (BISFET)

1994 ◽  
Vol 30 (10) ◽  
pp. 822-823
Author(s):  
J.J. Ojha ◽  
J.G. Simmons ◽  
A.J. SpringThorpe ◽  
R.S. Mand
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Design Optimisation ◽  
Effect Transistor ◽  
Insight Into

scholarly journals Control of Organic Superconducting Field-Effect Transistor by Cooling Rate

Crystals ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 605
Author(s):  
Genta Kawaguchi ◽  
Hiroshi Yamamoto
Keyword(s):  
Glass Transition ◽  
Transition Temperature ◽  
Cooling Rate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Mott Transition ◽  
Strongly Correlated ◽  
Effect Transistor ◽  
Ethylene Group ◽  
Insight Into

A new superconducting field-effect transistor (FET) in the vicinity of bandwidth-controlled Mott transition was developed using molecular strongly correlated system κ-(BEDT-TTF)2Cu[N(CN)2]Br [BEDT-TTF = bis(ethylenedithio)tetrathiafulvalene] laminated on CaF2 substrate. This device exhibited significant cooling-rate dependence of resistance below about 80 K, associated with glass transition of terminal ethylene group of BEDT-TTF molecule, where more rapid cooling through glass transition temperature leads to the decrease in bandwidth. We demonstrated that the FET properties such as ON/OFF ratio and polarity can be controlled by utilizing cooling rate. Our result may give a novel insight into the design of molecule-based functional devices.

Analysis of Polymer Field Effect Transistor

2001 ◽  
Vol 665 ◽  
Author(s):  
Y. Roichman ◽  
N. Tessler
Keyword(s):  
Numerical Model ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Contact Structure ◽  
Two Dimensional ◽  
Time Resolved ◽  
Effect Transistor ◽  
Top Contact ◽  
The Difference ◽  
Insight Into

ABSTRACTWe compare two basic organic FET structures both experimentally and theoretically. By using time resolved analysis we gain insight into the mechanisms affecting the performance of these structures. Using a two dimensional numerical model we focus on the top contact structure and demonstrate the difference between the two structures.

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Biosensor Based on Ion-Sensitive Field-Effect Transistor Using Minimum Contact to Float-ing Gate

2019 ◽  
Vol 24 (4) ◽  
pp. 407-414
Author(s):  
Oksana V. Gubanova ◽  
◽  
Evgeniy V. Kuznetsov ◽  
Elena N. Rybachek ◽  
Alexander N. Saurov ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor
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