scholarly journals A Highly Robust Silicon Ultraviolet Selective Radiation Sensor Using Differential Spectral Response Method

Sensors ◽  
2019 ◽  
Vol 19 (12) ◽  
pp. 2755 ◽  
Author(s):  
Yhang Ricardo Sipauba Carvalho da Silva ◽  
Rihito Kuroda ◽  
Shigetoshi Sugawa
Keyword(s):  
Quantum Efficiency ◽  
Near Infrared ◽  
Background Radiation ◽  
Uv Light ◽  
Internal Quantum Efficiency ◽  
Spectral Response ◽  
Optical Filters ◽  
Nir Light ◽  
Radiation Sensor ◽  
Response Method

This paper presents a silicon ultraviolet radiation sensor with over 90% UV internal quantum efficiency (QE) and high selectivity to the UV waveband without using optical filters. The sensor was developed for applications that require UV measurement under strong background visible and near-infrared (NIR) lights, such as solar UV measurement, UV-C monitoring in greenhouses or automated factories, and so on. The developed sensor is composed of monolithically formed silicon photodiodes with different spectral sensitivities: a highly UV responsive photodiode with internal quantum efficiency (QE) of nearly 100% for UV light, and a lowly UV responsive photodiode with UV internal QE lower than 10%. The photodiodes were optimized to match their visible and NIR light responsivity, and the UV signal is extracted from the background radiation by using the differential spectral response method. With this approach, an internal QE of over 90% for UV light was obtained, with a residual internal QE to non-UV light lower than 20% for 400 nm, 5% for 500 nm, 2% for 600 nm and 0.6% to NIR light. The developed sensor showed no responsivity degradation after exposure towards strong UV light. It was confirmed by the simulation results that the residual responsivity is further suppressed by employing an on-chip band-rejection optical layer consisting of several layers of silicon oxide and silicon nitride films.

Red/Near‐Infrared Thermally Activated Delayed Fluorescence OLEDs with Near 100 % Internal Quantum Efficiency

2019 ◽  
Vol 131 (41) ◽  
pp. 14802-14807 ◽  
Author(s):  
Jia‐Xiong Chen ◽  
Wen‐Wen Tao ◽  
Wen‐Cheng Chen ◽  
Ya‐Fang Xiao ◽  
Kai Wang ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Near Infrared ◽  
Internal Quantum Efficiency ◽  
Delayed Fluorescence ◽  
Thermally Activated Delayed Fluorescence ◽  
Thermally Activated

scholarly journals Spectral Irradiance Influence on Solar Cells Efficiency

Energies ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 5017
Author(s):  
David Leitão ◽  
João Paulo N. Torres ◽  
João F. P. Fernandes
Keyword(s):  
Near Infrared ◽  
Spectral Response ◽  
Experimental Tests ◽  
Optical Filters ◽  
Spectral Irradiance ◽  
Copper Indium ◽  
Input Variables ◽  
Relative Errors ◽  
The Impact ◽  
High Pass

This paper investigates the influence of the spectral irradiance variation and the spectral response (SR) on the production of energy by photovoltaic cells. To determine the impact of SR and spectral irradiance on m-Si and perovskite cells, experimental tests were conducted outdoors, used optical filters to select different zones of the spectrum. For the computational simulations of the different photovoltaic modules, when subjected to a certain spectral irradiance, a model with spectral factor (SF) was implemented. The SF model accurately simulated the experiments performed for the high-pass filters. The highest relative errors for certain irradiation bands occurred due to the input variables used in the model, which did not fully describe the reality of the experiments performed. The effect of the SR and the spectral irradiance for each of them were observed through the simulations for the m-Si, a-Si, CdTe, and copper indium selenide (CIS) modules. The CIS technology presented a better overall result in the near infrared zone, producing about half of the energy produced by the CdTe technology in the visible zone. The SF, spectral incompatibility factor (MM), and spectral effective responsivity (SEF) parameters were verified to be important for studying the photovoltaic energy production.

Broadband Near‐Infrared Garnet Phosphors with Near‐Unity Internal Quantum Efficiency

2020 ◽  
Vol 8 (12) ◽  
pp. 2000296 ◽  
Author(s):  
Endale T. Basore ◽  
Wenge Xiao ◽  
Xiaofeng Liu ◽  
Jianhong Wu ◽  
Jianrong Qiu
Keyword(s):  
Quantum Efficiency ◽  
Near Infrared ◽  
Internal Quantum Efficiency

Design and modeling of an SJ infrared solar cell approaching upper limit of theoretical efficiency

2018 ◽  
Vol 32 (02) ◽  
pp. 1850014 ◽  
Author(s):  
G. S. Sahoo ◽  
G. P. Mishra
Keyword(s):  
Solar Cell ◽  
Quantum Efficiency ◽  
Conversion Efficiency ◽  
Internal Quantum Efficiency ◽  
Spectral Response ◽  
Short Circuit ◽  
Cost Effective ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit

Recent trends of photovoltaics account for the conversion efficiency limit making them more cost effective. To achieve this we have to leave the golden era of silicon cell and make a path towards III–V compound semiconductor groups to take advantages like bandgap engineering by alloying these compounds. In this work we have used a low bandgap GaSb material and designed a single junction (SJ) cell with a conversion efficiency of 32.98%. SILVACO ATLAS TCAD simulator has been used to simulate the proposed model using both Ray Tracing and Transfer Matrix Method (under 1 sun and 1000 sun of AM1.5G spectrum). A detailed analyses of photogeneration rate, spectral response, potential developed, external quantum efficiency (EQE), internal quantum efficiency (IQE), short-circuit current density (J[Formula: see text]), open-circuit voltage (V[Formula: see text]), fill factor (FF) and conversion efficiency ([Formula: see text]) are discussed. The obtained results are compared with previously reported SJ solar cell reports.

Red/Near‐Infrared Thermally Activated Delayed Fluorescence OLEDs with Near 100 % Internal Quantum Efficiency

2019 ◽  
Vol 58 (41) ◽  
pp. 14660-14665 ◽  
Author(s):  
Jia‐Xiong Chen ◽  
Wen‐Wen Tao ◽  
Wen‐Cheng Chen ◽  
Ya‐Fang Xiao ◽  
Kai Wang ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Near Infrared ◽  
Internal Quantum Efficiency ◽  
Delayed Fluorescence ◽  
Thermally Activated Delayed Fluorescence ◽  
Thermally Activated

scholarly journals Fabrication of Upconverting Hybrid Nanoparticles for Near-Infrared Light Triggered Drug Release

2014 ◽  
Vol 2014 ◽  
pp. 1-9 ◽  
Author(s):  
Ranran Zhang ◽  
Risheng Yao ◽  
Binbin Ding ◽  
Yuxin Shen ◽  
Shengwen Shui ◽  
...  
Keyword(s):  
Drug Release ◽  
Near Infrared ◽  
Uv Light ◽  
Nile Red ◽  
Controlled Drug Release ◽  
Hybrid Nanoparticles ◽  
Infrared Light ◽  
Nir Light ◽  
Triggered Drug Release ◽  
Model Drug

Low tissue penetration and harmful effects of (ultraviolet) UV or visible light on normal tissue limit exploiting nanocarriers for the application of light-controlled drug release. Two strategies may solve the problem: one is to improve the sensitivity of the nanocarriers to light to decrease the radiation time; the other one is using more friendly light as the trigger. In this work, we fabricated a core-shell hybrid nanoparticle with an upconverting nanoparticle (UCNP) as the core and thermo- and light-responsive block copolymers as the shell to combine the two strategies together. The results indicated that the sensitivity of the block copolymer to light could be enhanced by decreasing the photolabile moieties in the polymer, and the UCNP could transfer near-infrared (NIR) light, which is more friendly to tissue and cell, to UV light to trigger the phase conversion of the block polymersin situ. Using Nile Red (NR) as the model drug, the hybrid nanoparticles were further proved to be able to act as carriers with the character of NIR triggered drug release.

Quantum Confinement Modeling and Simulation for Quantum Well Solar Cells

2012 ◽  
pp. 48-58
Author(s):  
Laurentiu Fara ◽  
Mihai Razvan Mitroi
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Quantum Efficiency ◽  
Quantum Confinement ◽  
Near Infrared ◽  
Internal Quantum Efficiency ◽  
Infrared Range ◽  
Cell Efficiency ◽  
New Energy ◽  
Valence Bands

In this chapter, the authors present the modelling and simulation of the multi-layered quantum well solar cells as well as the simulated results of this model. The quantum confinement of a semiconductor induces new energy levels, located in the band gap, as well as resonant levels located in the conduction and valence bands. These levels allow supplementary absorption in the visible and near infrared range. The quantum efficiency of the supplementary absorption is calculated within the infinite rectangular quantum well approximation. As the absorption excites carriers in the gap of each layer, even a small absorption significantly increases the photocurrent (by photoassisted tunneling) and, therefore, the cell efficiency. The results of the simulation are presented for the internal quantum efficiency of the transitions between the resonant levels of GaAs, as well as the internal quantum efficiency of the transitions between the confinement levels for GaAs and AlxGa1-xAs. New directions for the research of quantum well solar cells are indicated.

Highly sensitive polymer photodetectors with a broad spectral response range from UV light to the near infrared region

2015 ◽  
Vol 3 (28) ◽  
pp. 7386-7393 ◽  
Author(s):  
Wenbin Wang ◽  
Fujun Zhang ◽  
Lingliang Li ◽  
Miao Zhang ◽  
Qiaoshi An ◽  
...  
Keyword(s):  
Active Layer ◽  
Near Infrared ◽  
Uv Light ◽  
Spectral Response ◽  
Infrared Region ◽  
Response Range ◽  
Highly Sensitive ◽  
Near Infrared Region

Highly sensitive polymer photodetectors with a broad spectral response range from UV light to the near infrared region based on P3HT : PTB7-Th : PC71BM as the active layer are reported.

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