scholarly journals A GaN-Based Wireless Monitoring System for High-Temperature Applications

Sensors ◽  
2019 ◽  
Vol 19 (8) ◽  
pp. 1785 ◽  
Author(s):  
Ahmad Hassan ◽  
Mohamed Ali ◽  
Aref Trigui ◽  
Yvon Savaria ◽  
Mohamad Sawan
Keyword(s):  
High Temperature ◽  
High Electron Mobility Transistor ◽  
Building Blocks ◽  
High Amplitude ◽  
High Electron ◽  
Analog To Digital ◽  
Fully Integrated ◽  
Amplitude Data ◽  
Shift Keying ◽  
High Voltage Supply

A fully-integrated data transmission system based on gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices is proposed. This system targets high-temperature (HT) applications, especially those involving pressure and temperature sensors for aerospace in which the environmental temperature exceeds 350 °C. The presented system includes a front-end amplifying the sensed signal (gain of 50 V/V), followed by a novel analog-to-digital converter driving a modulator exploiting the load-shift keying technique. An oscillation frequency of 1.5 MHz is used to ensure a robust wireless transmission through metallic-based barriers. To retrieve the data, a new demodulator architecture based on digital circuits is proposed. A 1 V amplitude difference can be detected between a high-amplitude (data-on) and a low-amplitude (data-off) of the received modulated signal. Two high-voltage supply levels (+14 V and −14 V) are required to operate the circuits. The layout of the proposed system was completed in a chip occupying 10.8 mm2. The HT characterization and modeling of integrated GaN devices and passive components are performed to ensure the reliability of simulation results. The performance of the various proposed building blocks, as well as the whole system, have been validated by simulation over the projected wide operating temperature range (25–350 °C).

InGaN-channel high-electron-mobility transistor with enhanced linearity and high-temperature performance

2018 ◽  
Vol 11 (9) ◽  
pp. 094101 ◽  
Author(s):  
Yachao Zhang ◽  
Tao Zhang ◽  
Hong Zhou ◽  
Yao Li ◽  
Shengrui Xu ◽  
...  
Keyword(s):  
High Temperature ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Temperature Performance

A Resistive GaN-HEMT Mixer for a Cable Modem Operable up to 250°C for Downhole Communications

2017 ◽  
Vol 14 (1) ◽  
pp. 17-25 ◽  
Author(s):  
Jebreel M. Salem ◽  
Dong Sam Ha
Keyword(s):  
High Temperature ◽  
Oil And Gas ◽  
High Electron Mobility Transistor ◽  
Oil And Gas Industry ◽  
Intermediate Frequency ◽  
Local Oscillator ◽  
Heat Extraction ◽  
High Electron ◽  
Reliable Operation ◽  
Ambient Temperatures

It is necessary for the oil and gas industry to drill deeper due to decrease of easily accessible natural reserves. Temperatures of deep wells can exceed 210°C, and conventional cooling and heat extraction techniques are impractical in such a harsh environment. Reliable electronic designs that can sustain high temperature become necessary. This article presents a high-temperature passive radio frequency (RF) mixer for downhole communications. The proposed mixer is designed to upconvert or downconvert the incoming signal with low conversion loss (CL), high linearity, and reliable operation at the ambient temperature up to 250°C. GaN is a wide-bandgap technology that can provide a reliable operation at high ambient temperatures, and the proposed mixer adopts a commercial GaN high-electron-mobility transistor. Measurement results indicate that the proposed mixer achieves a CL of 7.1 dB at local oscillator (LO) power of 2.5 dBm for the downconversion from 230–253 to 97.5 MHz at 250°C and the input P1dB compression point lies at 5 dBm. The designed mixer also achieves 24.5 dB RF-to-intermediate frequency (IF) isolation and 28 dB LO-to-IF isolation at 250°C. The power dissipation of the mixer is virtually zero.

High-Temperature Breakdown Characteristics of δ-Doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs High Electron Mobility Transistor

2000 ◽  
Vol 39 (Part 2, No. 10B) ◽  
pp. L1029-L1031 ◽  
Author(s):  
Ching-Sung Lee ◽  
Wei-Chou Hsu ◽  
Yen-Wei Chen ◽  
Yung-Cha Chen ◽  
Hir-Ming Shieh
Keyword(s):  
High Temperature ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

scholarly journals AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency

2021 ◽  
Author(s):  
Paula Palacios ◽  
Muh‐Dey Wei ◽  
Thorsten Zweipfennig ◽  
Ahmed Hamed ◽  
Carsten Beckmann ◽  
...  
Keyword(s):  
High Temperature ◽  
Electron Mobility ◽  
High Frequency ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Transistor Oscillator

scholarly journals Monolithic Si-Based AlGaN/GaN MIS-HEMTs Comparator and Its High Temperature Characteristics

2021 ◽  
Vol 11 (24) ◽  
pp. 12057
Author(s):  
Fan Li ◽  
Ang Li ◽  
Yuhao Zhu ◽  
Chengmurong Ding ◽  
Yubo Wang ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Wide Band ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Static Characteristics ◽  
Wide Band Gap ◽  
Mixed Signal Circuits ◽  
Promising Application ◽  
Recessed Gate

Monolithic GaN High Electron Mobility Transistor (HEMT)-integrated circuits are a promising application of wide band-gap materials. To date, most GaN-based devices behave as NMOS-like transistors. As only NMOS GaN HEMT is currently commercially available, its control circuit requires special design if monolithic integration is desired. This article analyzes the schematics of a GaN-based comparator, and three comparator structures are compared through ADS simulation. The optimal structure with the bootstrapped technique is fabricated based on AlGaN/GaN Metal–Insulator–Semiconductor (MIS) HEMT with the recessed gate method. The comparator has excellent static characteristics when the reference voltage increases from 3 V to 8 V. Dynamic waveforms from 10 kHz to 1 MHz are also obtained. High-temperature tests from 25 °C to 250 °C are applied upon both DC and AC characteristics. The mechanisms of instability issues are explained under dynamic working condition. The results prove that the comparator can be used in the state-of-art mixed-signal circuits, demonstrating the potential for the monolithic all-GaN integrated circuits.

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