scholarly journals Laterally Movable Triple Electrodes Actuator toward Low Voltage and Fast Response RF-MEMS Switches

Sensors ◽  
2019 ◽  
Vol 19 (4) ◽  
pp. 864 ◽  
Author(s):  
Yasuyuki Naito ◽  
Kunihiko Nakamura ◽  
Keisuke Uenishi
Keyword(s):  
Rf Mems ◽  
Low Voltage ◽  
Low Cost ◽  
Actuation Voltage ◽  
Fast Response ◽  
Point Of View ◽  
Micro Electro Mechanical Systems ◽  
Mems Switches ◽  
Rf Mems Switches ◽  
Series Switch

A novel actuator toward a low voltage actuation and fast response in RF-MEMS (radio frequency micro-electro-mechanical systems) switches is reported in this paper. The switch is comprised of laterally movable triple electrodes, which are bistable by electrostatic forces applied for not only the on-state, but also the off-state. The bistable triple electrodes enable the implementation of capacitive series and shunt type switches on a single switch, which leads to high isolation in spite of the small gap between the electrodes on the series switch. These features of the actuator are effective for a low voltage and fast response actuation in both the on- and off-state. The structure was designed in RF from a mechanical point of view. The laterally movable electrodes were achieved using a simple, low-cost two-mask process with 2.0 µm thick sputtered aluminum. The characteristics of switching response time and actuation voltage were 5.0 µs and 9.0 V, respectively.

Scope of RF MEMS Technology for Microwave Circuits and Systems

2021 ◽  
pp. 1-22
Author(s):  
Kanthamani Sundharajan
Keyword(s):  
Rf Mems ◽  
Low Cost ◽  
Microwave Circuits ◽  
Micro Electro Mechanical Systems ◽  
Mems Switches ◽  
Phased Array Antennas ◽  
Array Antennas ◽  
Rf Mems Switches ◽  
Mems Technology ◽  
Key Issues

Micro-electro mechanical systems (MEMS) technology has facilitated the need for innovative approaches in the design and development of miniaturized, effective, low-cost radio frequency (RF) microwave circuits and systems. This technology is expected to have significant role in today's 5G applications for the development of reconfigurable architectures. This chapter presents an overview of the evolution of MEMS-based subsystems and devices, especially switches and phased array antennas. This chapter also discusses the key issues in design and analysis of RF MEMS-based devices, particularly with primary emphasis on RF MEMS switches and antennas.

Application of RF MEMS Switch for Reconfiguring Micromachined Antennas

2014 ◽  
Vol 704 ◽  
pp. 293-298
Author(s):  
Jija Rajmohan ◽  
M.R. Baiju
Keyword(s):  
Rf Mems ◽  
Low Voltage ◽  
Actuation Voltage ◽  
Rf Mems Switch ◽  
Capacitive Switch ◽  
Mems Switches ◽  
Wireless Applications ◽  
Mems Switch ◽  
Rf Components ◽  
Rf Mems Switches

For mobile and wireless applications where the size of the system has to be minimized, antenna and RF components are to be integrated on to the same substrate. The contradicting requirements of the substrate with respect to the antenna and the RF circuit can be resolved by using micromachined antennas. If the principle of reconfigurability is applied to the micromachined antenna, it increases the versatality of the system. This paper proposes reconfigurability of micromachined antennas using RF MEMS switches. In the case of micromachined antennas, which involve low voltage signals, RF MEMS switches with low actuation voltage are required for achieving reconfigurability. In this paper an RF MEMS capacitive switch operating at a low actuation voltage of 1 Volt is presented

The Influence of Ambient Pressure on the Dynamic Response of RF MEMS Switches

2010 ◽  
Author(s):  
Avihay Ohana ◽  
Oren Aharon ◽  
Ronen Maimon ◽  
Boris Nepomnyashchy ◽  
Lior Kogut
Keyword(s):  
Rf Mems ◽  
Ambient Pressure ◽  
Actuation Voltage ◽  
Operating Conditions ◽  
Experimental Results ◽  
Release Time ◽  
Q Factor ◽  
Optimal Operating ◽  
Mems Switches ◽  
Rf Mems Switches

A study of the dynamic behavior of an RF MEMS switch is presented at different operating conditions. Experimental results for the actuation and release time and Q-factor as a function of the ambient pressure and actuation voltage are compared to theoretical predictions based on existing model. Optimal operating conditions (ambient pressure and actuation voltage) are determined based on two criterions: minimal actuation and release time and minimal oscillations upon switch release. In light of the experimental results optimal operating conditions determined to be 1.4Vpi at a pressure of a few torrs where actuation and release time are equal and short enough with no release oscillations. Three pressure regimes are identified with characteristic behavior of the Q-factor and actuation and release time in each regime. These behaviors have significant implications in many MEMS devices, especially RF MEMS switches.

Design of H-shaped low actuation-voltage RF-MEMS switches

2006 ◽  
Author(s):  
Anatoliy Batmanov ◽  
Ehab K. I. Hamad ◽  
Edmund P. Burte ◽  
Abbas S. Omar
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Mems Switches ◽  
Rf Mems Switches

Influence of temperature on the actuation voltage of RF-MEMS switches

2013 ◽  
Vol 53 (5) ◽  
pp. 706-711 ◽  
Author(s):  
V. Mulloni ◽  
F. Solazzi ◽  
F. Ficorella ◽  
A. Collini ◽  
B. Margesin
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Influence Of Temperature ◽  
Mems Switches ◽  
Rf Mems Switches ◽  
Influence Of Temperature On

Micro/Nanotribology of RF MEMS Switches

2004 ◽  
Author(s):  
Steven T. Patton ◽  
Kalathil C. Eapen ◽  
Jeffrey S. Zabinski
Keyword(s):  
Electric Current ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Low Cost ◽  
Operating Conditions ◽  
Great Promise ◽  
Rf Switches ◽  
Mems Switches ◽  
Adhesion Contact ◽  
Rf Mems Switches

Microelectromechanical systems (MEMS) radio frequency (RF) switches hold great promise in a myriad of commercial, aerospace, and military applications. MEMS switches offer important advantages over current electromechanical and solid state technologies including high linearity, low insertion loss, low power consumption, good isolation, and low cost [1–21]. However, there is little fundamental understanding of the factors determining the performance and reliability of these devices. Our previous work investigated fundamentals of hot-switched direct current (DC) gold (Au) contacts using a modified microadhesion apparatus as a switch simulator [1]. Those experiments were conducted under precisely controlled operating conditions in air at MEMS-scale forces with an emphasis on the role of surface forces and electric current on switch performance, reliability, and durability [1]. Electric current had a profound effect on deformation mechanisms, adhesion, contact resistance (R), and reliability/durability. At low current (1–10 μA), asperity creep and switching induced adhesion were the most important observations, whereas, at high current (1–10 mA), lack of adhesion and switch shorting by nanowire formation were prominent [1].

Power Handling Capability Improvement of Metal-Contact RF MEMS Switches by Optimized Array Configuration Design of Contact Dimples

2014 ◽  
Vol 609-610 ◽  
pp. 1417-1421
Author(s):  
Chen Xu Zhao ◽  
Xin Guo ◽  
Tao Deng ◽  
Ling Li ◽  
Ze Wen Liu
Keyword(s):  
Rf Mems ◽  
Contact Point ◽  
Metal Contact ◽  
Micro Electro Mechanical Systems ◽  
Mems Switches ◽  
Array Configuration ◽  
Power Handling ◽  
Novel Approach ◽  
Rf Mems Switches ◽  
Power Handling Capability

This paper presents a novel approach to enhancing power-handling capability of metal-contact radio-frequency micro-electro-mechanical systems (RF MEMS) switches based on an Optimized Array Configured (OAC) contact dimples design. The simulation results reveal that this strategy can distribute the RF current more uniformly through each contact of the switch than traditional multiple parallel-configured contacts design, thus leading to a more effective reduction of current through each contact. Therefore, probability of micromelding and adhesion at metal contact point owing to localized high current induced Joule heating, which limits the power handling capability of the metal-contact RF MEMS switch, can be effectively reduced by the proposed approach. Comparing with previously fabricated switch, power-handling capability of the switch with OAC contact dimples can be dramatically improved over 390%.

Quantification of Uncertainty in Creep Failure in RF-MEMS Switches

2012 ◽  
Author(s):  
Peter A. Kolis ◽  
Marisol Koslowski ◽  
Anil K. Bajaj
Keyword(s):  
Rf Mems ◽  
Beam Model ◽  
Creep Failure ◽  
Micro Electro Mechanical Systems ◽  
Modal Expansion ◽  
Mems Switches ◽  
Electrostatically Actuated ◽  
Mems Switch ◽  
Rf Mems Switches

We present simulations of the dynamic response of radio frequency micro-electro-mechanical-systems (RF-MEMS) switches undergoing creep deformation. The model includes a microscale-informed Coble creep formulation incorporated in a beam model of an electrostatically actuated RF-MEMS switch, and it is solved using a Ritz-Galerkin based modal expansion. The resulting effects on the long-term device behavior as well as the implications of uncertainty in the device geometry and material parameters are studied. We find that the addition of creep to the beam model results in an undesired degradation of the device performance, as evidenced by decreases in the closing and release voltages.

Sign in / Sign up

Export Citation Format

Share Document