scholarly journals Mechanical and Electrical Noise in Sense Channel of MEMS Vibratory Gyroscopes

Sensors ◽  
2017 ◽  
Vol 17 (10) ◽  
pp. 2306 ◽  
Author(s):  
Xukai Ding ◽  
Jia Jia ◽  
Yang Gao ◽  
Hongsheng Li
Keyword(s):  
Electrical Noise ◽  
Vibratory Gyroscopes ◽  
Mems Vibratory Gyroscopes

scholarly journals Environmentally Robust MEMS Vibratory Gyroscopes for Automotive Applications

2009 ◽  
Vol 9 (12) ◽  
pp. 1895-1906 ◽  
Author(s):  
Cenk Acar ◽  
Adam R. Schofield ◽  
Alexander A. Trusov ◽  
Lynn E. Costlow ◽  
Andrei M. Shkel
Keyword(s):  
Automotive Applications ◽  
Vibratory Gyroscopes ◽  
Mems Vibratory Gyroscopes

scholarly journals An Interface ASIC for MEMS Vibratory Gyroscopes with Nonlinear Driving Control

Micromachines ◽  
2019 ◽  
Vol 10 (4) ◽  
pp. 270 ◽  
Author(s):  
Risheng Lv ◽  
Qiang Fu ◽  
Liang Yin ◽  
Yuan Gao ◽  
Wei Bai ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Resonance Oscillation ◽  
Temperature Drift ◽  
Sigma Delta ◽  
Vibratory Gyroscopes ◽  
Digital Circuitry ◽  
Mems Vibratory Gyroscopes

This paper proposes an interface application-specific-integrated-circuit (ASIC) for micro-electromechanical systems (MEMS) vibratory gyroscopes. A closed self-excited drive loop is employed for automatic amplitude stabilization based on peak detection and proportion-integration (PI) controller. A nonlinear multiplier terminating the drive loop is designed for rapid resonance oscillation and linearity improvement. Capacitance variation induced by mechanical motion is detected by a differential charge amplifier in sense mode. After phase demodulation and low-pass filtering an analog signal indicating the input angular velocity is obtained. Non-idealities are further suppressed by on-chip temperature drift calibration. In order for better compatibility with digital circuitry systems, a low passband incremental zoom sigma-delta (ΣΔ) analog-to-digital converter (ADC) is implemented for digital output. Manufactured in a standard 0.35 μm complementary metal-oxide-semiconductor (CMOS) technology, the whole interface occupies an active area of 3.2 mm2. Experimental results show a bias instability of 2.2 °/h and a nonlinearity of 0.016% over the full-scale range.

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