scholarly journals A Low-Noise CMOS THz Imager Based on Source Modulation and an In-Pixel High-Q Passive Switched-Capacitor N-Path Filter

Sensors ◽  
2016 ◽  
Vol 16 (3) ◽  
pp. 325 ◽  
Author(s):  
Assim Boukhayma ◽  
Antoine Dupret ◽  
Jean-Pierre Rostaing ◽  
Christian Enz
Keyword(s):  
1989 ◽  
Vol 72 (11) ◽  
pp. 1-9
Author(s):  
Masataka Nakamura ◽  
Mitsuo Okine ◽  
Takanori Shigehiro ◽  
Tatsuya Ishizaki
Keyword(s):  

Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1071
Author(s):  
Bo Jiang ◽  
Yan Su ◽  
Guowen Liu ◽  
Lemin Zhang ◽  
Fumin Liu

Disc gyroscope manufactured through microelectromechanical systems (MEMS) fabrication processes becomes one of the most critical solutions for achieving high performance. Some reported novel disc constructions acquire good performance in bias instability, scale factor nonlinearity, etc. However, antivibration characteristics are also important for the devices, especially in engineering applications. For multi-ring structures with central anchors, the out-of-plane motions are in the first few modes, easily excited within the vibration environment. The paper presents a multi-ring gyro with good dynamic characteristics, operating at the first resonant mode. The design helps obtain better static performance and antivibration characteristics with anchor points outside of the multi-ring resonator. According to harmonic experiments, the nearest interference mode is located at 30,311 Hz, whose frequency difference is 72.8% far away from working modes. The structures were fabricated with silicon on insulator (SOI) processes and wafer-level vacuum packaging, where the asymmetry is 780 ppm as the frequency splits. The gyro also obtains a high Q-factor. The measured value at 0.15 Pa was 162 k, which makes the structure have sizeable mechanical sensitivity and low noise.


2004 ◽  
Vol 1 (13) ◽  
pp. 363-367 ◽  
Author(s):  
Ahmed El Oualkadi ◽  
Jean-Marie Paillot ◽  
Hervé Guegnaud ◽  
Rachid Allam ◽  
Lucien Dascalescu

2002 ◽  
Vol 15 (2) ◽  
pp. 295-305
Author(s):  
Nikolay Radev ◽  
Kantcho Ivanov

Two high-performance switched-capacitor (SC) integrators which use different approaches for the compensation of the operational amplifier finite dc gain and offset voltage are considered. Analytical expressions for the gain, phase and offset voltage errors of the Baschirotto-90 integrator are derived and compared with the corresponding errors of the Shafeeu-91 integrator. Both the integrators are used as building blocks of a high-Q band pass SC biquad. The resultant filters are compared in terms of the percent deviations from the ideal case of the central frequency and the quality factor. Subsequently, the slight shift in the frequency response of the biquad with Shafeeu-91 integrator is eliminated by modifying the values of two capacitors .


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