scholarly journals A High Q-Factor Outer-Frame-Anchor Gyroscope Operating at First Resonant Mode

Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1071
Author(s):  
Bo Jiang ◽  
Yan Su ◽  
Guowen Liu ◽  
Lemin Zhang ◽  
Fumin Liu
Keyword(s):  
High Performance ◽  
Microelectromechanical Systems ◽  
Resonant Mode ◽  
Low Noise ◽  
Silicon On Insulator ◽  
Q Factor ◽  
Wafer Level ◽  
High Q ◽  
Ring Structures ◽  
Static Performance

Disc gyroscope manufactured through microelectromechanical systems (MEMS) fabrication processes becomes one of the most critical solutions for achieving high performance. Some reported novel disc constructions acquire good performance in bias instability, scale factor nonlinearity, etc. However, antivibration characteristics are also important for the devices, especially in engineering applications. For multi-ring structures with central anchors, the out-of-plane motions are in the first few modes, easily excited within the vibration environment. The paper presents a multi-ring gyro with good dynamic characteristics, operating at the first resonant mode. The design helps obtain better static performance and antivibration characteristics with anchor points outside of the multi-ring resonator. According to harmonic experiments, the nearest interference mode is located at 30,311 Hz, whose frequency difference is 72.8% far away from working modes. The structures were fabricated with silicon on insulator (SOI) processes and wafer-level vacuum packaging, where the asymmetry is 780 ppm as the frequency splits. The gyro also obtains a high Q-factor. The measured value at 0.15 Pa was 162 k, which makes the structure have sizeable mechanical sensitivity and low noise.

High-Q Silicon-on-Insulator Micro-Ring Resonator with Silica Covering

2013 ◽  
Vol 684 ◽  
pp. 443-446
Author(s):  
Chao Liu ◽  
Chen Yang Xue ◽  
Dan Feng Cui ◽  
Jun Bin Zang ◽  
Yong Hua Wang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Transmission Spectrum ◽  
Electron Beam Lithography ◽  
Ring Resonator ◽  
Sio2 Layer ◽  
Silicon On Insulator ◽  
New Method ◽  
Ring Resonators ◽  
Q Factor ◽  
High Q

We designed High-Q micro-ring resonators based on SOI material. A new method of using a top SiO2 layer to cover the waveguide is applied and the tested Q factor is as high as 1.0135×104. Micro-ring resonator has been fabricated using Electron-Beam Lithography and Inductive Coupled Plasma. OptiFDTD was used to simulate the micro-ring resonator and we compared the transmission spectrum of this resonator with the resonator without SiO2 covering.

Application of SU-8 photoresist as a multi-functional structural dielectric layer in FOWLP

2017 ◽  
Vol 2017 (DPC) ◽  
pp. 1-19
Author(s):  
Raquel Pinto ◽  
André Cardoso ◽  
Sara Ribeiro ◽  
Carlos Brandão ◽  
João Gaspar ◽  
...  
Keyword(s):  
Structural Material ◽  
High Performance ◽  
Microelectromechanical Systems ◽  
Low Cost ◽  
Process Conditions ◽  
Processing Temperature ◽  
Wafer Level ◽  
Fast Growing ◽  
Wide Range ◽  
Different Types

Microelectromechanical Systems (MEMS) are a fast growing technology for sensor and actuator miniaturization finding more and more commercial opportunities by having an important role in the field of Internet of Things (IoT). On the same note, Fan-out Wafer Level Packaging (FOWLP), namely WLFO technology of NANIUM, which is based on Infineon/ Intel eWLB technology, is also finding further applications, not only due to its high performance, low cost, high flexibility, but also due to its versatility to allow the integration of different types of components in the same small form-factor package. Despite its great potential it is still off limits to the more sensitive components as micro-mechanical devices and some type of sensors, which are vulnerable to temperature and pressure. In the interest of increasing FOWLP versatility and enabling the integration of MEMS, new methods of assembling and processing are continuously searched for. Dielectrics currently used for redistribution layer construction need to be cured at temperatures above 200°C, making it one of the major boundary for low temperature processing. In addition, in order to accomplish a wide range of dielectric thicknesses in the same package it is often necessary to stack very different types of dielectrics with impact on bill of materials complexity and cost. In this work, done in cooperation with the International Iberian Nanotechnology Laboratory (INL), we describe the implementation of commercially available SU-8 photoresist as a structural material in FOWLP, allowing lower processing temperature and reduced internal package stress, thus enabling the integration of components such as MEMS/MOEMS, magneto-resistive devices and micro-batteries. While SU-8 photoresist was first designed for the microelectronics industry, it is currently highly used in the fabrication of microfluidics as well as microelectromechanical systems (MEMS) and BIO-MEMS due to its high biocompatibility and wide range of available thicknesses in the same product family. Its good thermal and chemical resistance and also mechanical and rheological properties, make it suitable to be used as a structural material, and moreover it cures at 150°C, which is key for the applications targeted. Unprecedentedly, SU-8 photoresist is tested in this work as a structural dielectric for the redistribution layers on 300mm fan-out wafers. Main concerns during the evaluation of the new WLFO dielectric focused on processability quality; adhesion to multi-material substrate and metals (copper, aluminium, gold, ¦); between layers of very different thicknesses; and overall reliability. During preliminary runs, processability on 300 mm fan-out wafers was evaluated by testing different coating and soft bake conditions, exposure settings, post-exposure parameters, up to developing setup. The outputs are not only on process conditions and results but also on WLFO design rules. For the first time, a set of conditions has been defined that allows processing SU-8 on WLFO, with thickness values ranging from 1 um to 150 um. The introduction of SU-8 in WLFO is a breakthrough in this fast-growing advanced packaging technology platform as it opens vast opportunities for sensor integration in WLP technology.

scholarly journals Periodic Tubular Structures and Phononic Crystals towards High-Q Liquid Ultrasonic Inline Sensors for Pipes

Sensors ◽  
2021 ◽  
Vol 21 (17) ◽  
pp. 5982
Author(s):  
Nikolay Mukhin ◽  
Ralf Lucklum
Keyword(s):  
Mode Conversion ◽  
Phononic Crystal ◽  
Resonant Mode ◽  
Phononic Crystals ◽  
Acoustic Energy ◽  
Wave Radiation ◽  
Q Factor ◽  
Tubular Structures ◽  
High Q ◽  
Ultrasound Sensor

The article focuses on a high-resolution ultrasound sensor for real-time monitoring of liquid analytes in cylindrical pipes, tubes, or capillaries. The development of such a sensor faces the challenges of acoustic energy losses, including dissipation at liquid/solid interface and acoustic wave radiation along the pipe. Furthermore, we consider acoustic resonant mode coupling and mode conversion. We show how the concept of phononic crystals can be applied to solve these problems and achieve the maximum theoretically possible Q-factor for resonant ultrasonic sensors. We propose an approach for excitation and measurement of an isolated radial resonant mode with minimal internal losses. The acoustic energy is effectively localized in a narrow probing area due to the introduction of periodically arranged sectioned rings around the tube. We present a sensor design concept, which optimizes the coupling between the tubular resonator and external piezoelectric transducers. We introduce a 2D-phononic crystal in the probing region for this purpose. The Q-factor of the proposed structures show the high prospects for phononic crystal pipe sensors.

scholarly journals A High-Performance Digital Interface Circuit for a High-Q Micro-Electromechanical System Accelerometer

Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 675 ◽  
Author(s):  
Xiangyu Li ◽  
Jianping Hu ◽  
Xiaowei Liu
Keyword(s):  
High Performance ◽  
Low Noise ◽  
Electromechanical System ◽  
Digital Interface ◽  
Interface Circuit ◽  
Mems Accelerometer ◽  
High Q ◽  
Front End ◽  
Micro Electromechanical System ◽  
Micro Accelerometer

Micro-electromechanical system (MEMS) accelerometers are widely used in the inertial navigation and nanosatellites field. A high-performance digital interface circuit for a high-Q MEMS micro-accelerometer is presented in this work. The mechanical noise of the MEMS accelerometer is decreased by the application of a vacuum-packaged sensitive element. The quantization noise in the baseband of the interface circuit is greatly suppressed by a 4th-order loop shaping. The digital output is attained by the interface circuit based on a low-noise front-end charge-amplifier and a 4th-order Sigma-Delta (ΣΔ) modulator. The stability of high-order ΣΔ was studied by the root locus method. The gain of the integrators was reduced by using the proportional scaling technique. The low-noise front-end detection circuit was proposed with the correlated double sampling (CDS) technique to eliminate the 1/f noise and offset. The digital interface circuit was implemented by 0.35 μm complementary metal-oxide-semiconductor (CMOS) technology. The high-performance digital accelerometer system was implemented by double chip integration and the active interface circuit area was about 3.3 mm × 3.5 mm. The high-Q MEMS accelerometer system consumed 10 mW from a single 5 V supply at a sampling frequency of 250 kHz. The micro-accelerometer system could achieve a third harmonic distortion of −98 dB and an average noise floor in low-frequency range of less than −140 dBV; a resolution of 0.48 μg/Hz1/2 (@300 Hz); a bias stability of 18 μg by the Allen variance program in MATLAB.

scholarly journals High-Q Wafer Level Package Based on Modified Tri-Layer Anodic Bonding and High Performance Getter and Its Evaluation for Micro Resonant Pressure Sensor

Sensors ◽  
2017 ◽  
Vol 17 (3) ◽  
pp. 599 ◽  
Author(s):  
Liying Wang ◽  
Xiaohui Du ◽  
Lingyun Wang ◽  
Zhanhao Xu ◽  
Chenying Zhang ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
High Performance ◽  
Anodic Bonding ◽  
Wafer Level ◽  
High Q ◽  
Wafer Level Package

scholarly journals Mechanical Synchronization of MEMS Electrostatically Driven Coupled Beam Filters

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1191
Author(s):  
Richard Syms ◽  
Adam Bouchaala
Keyword(s):  
High Performance ◽  
Element Model ◽  
Finite Element Models ◽  
Q Factor ◽  
Exact Mass ◽  
High Q ◽  
Lumped Element ◽  
Lumped Element Model ◽  
Coupled Beams ◽  
Spurious Modes

Micro-electromechanical systems (MEMS) bandpass filters based on arrays of electrostatically driven coupled beams have been demonstrated at MHz frequencies. High performance follows from the high Q-factor of mechanical resonators, and electrostatic transduction allows tuning, matching and actuation. For high-order filters, there is a conflict between the transduction mechanism and the coupling arrangement needed for dynamic synchronization: it is not possible to achieve synchronization and tuning simultaneously using a single voltage. Here we propose a general solution, based on the addition of mass-loaded beams at the ends of the array. These beams deflect for direct current (DC) voltages, and therefore allow electrostatic tuning, but do not respond to in-band alternating current (AC) voltages and hence do not interfere with synchronization. Spurious modes generated by these beams may be damped, leaving a good approximation to the desired response. The approach is introduced using a lumped element model and verified using stiffness matrix and finite element models for in-plane arrays with parallel plate drives and shown to be tolerant of the exact mass value. The principle may allow compensation of fabrication-induced variations in complex filters.

An Ultra-Low Noise Instrumentation Amplifer Designed for High Temperature Applications

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000082-000086
Author(s):  
Jeff Watson ◽  
Gustavo Castro
Keyword(s):  
High Temperature ◽  
High Performance ◽  
Low Noise ◽  
Silicon On Insulator ◽  
Instrumentation Amplifier ◽  
Leakage Currents ◽  
Comprehensive Reliability ◽  
High Temperature Operation ◽  
Temperature Applications

This paper discusses a very low noise instrumentation amplifier designed specifically for high temperature applications. The device uses a proprietary silicon-on-insulator process that minimizes parasitic leakage currents at elevated temperature. Variance in device parameters are managed to maintain high performance over a wide temperature range. Layout and packaging considerations that would affect long term reliability are addressed. The amplifier is well characterized above 200°C and attains much higher performance than amplifiers not optimized for high temperature operation. Comprehensive reliability testing over temperature has been completed.

scholarly journals Low-Cost, High-Performance Fiber Optic Fabry–Perot Sensor for Ultrasonic Wave Detection

Sensors ◽  
2019 ◽  
Vol 19 (2) ◽  
pp. 406 ◽  
Author(s):  
Haoyong Li ◽  
Delin Li ◽  
Chaoyu Xiong ◽  
Wenrong Si ◽  
Chenzhao Fu ◽  
...  
Keyword(s):  
High Performance ◽  
Microelectromechanical Systems ◽  
Fiber Optic ◽  
Low Cost ◽  
Experimental Tests ◽  
Silicon On Insulator ◽  
Processing Technology ◽  
Fabry Perot ◽  
High Performance Fiber ◽  
The Cost

This study describes a novel fiber optic extrinsic Fabry–Perot interferometric (EFPI) ultrasonic sensor comprising a low-cost and high-performance silicon diaphragm. A vibrating diaphragm, 5 μm thick, was fabricated by using the Microelectromechanical Systems (MEMS) processing technology on a silicon-on-insulator (SOI) wafer. The Fabry–Perot (FP) cavity length was solely determined during the manufacturing process of the diaphragm by defining a specific stepped hole on the handling layer of the SOI wafer, which made the assembly of the sensor easier. In addition, the use of cheap and commercially available components and MEMS processing technology in the development of the sensing system, limited the cost of the sensor. The experimental tests showed that the minimum detectable ultrasonic pressure was 1.5 mPa/sqrt(Hz) –0.625 mPa/sqrt(Hz) between 20 kHz and 40 kHz. As a result, this sensor has the potential to successfully detect weak ultrasonic signals.

scholarly journals Ultra-Low-Loss Silicon Waveguides for Heterogeneously Integrated Silicon/III-V Photonics

2018 ◽  
Author(s):  
Minh Tran ◽  
Duanni Huang ◽  
Tin Komljenovic ◽  
Jonathan Peters ◽  
Aditya Malik ◽  
...  
Keyword(s):  
High Performance ◽  
Photonic Devices ◽  
Low Noise ◽  
Integrated Photonics ◽  
Delay Lines ◽  
Low Loss ◽  
Silicon Waveguides ◽  
High Q ◽  
Silicon Waveguide ◽  
Ultra Low Noise

Integrated ultra-low-loss waveguides are highly desired for integrated photonics to enable applications that require long delay lines, high-Q resonators, narrow filters, etc. Here we present an ultra-low-loss silicon waveguide on 500 nm thick SOI platform. Meter-scale delay lines, million-Q resonators and tens of picometer bandwidth grating filters are experimentally demonstrated. We design a low-loss low-reflection taper to seamlessly integrate the ultra-low-loss waveguide with standard heterogeneous Si/III-V integrated photonics platform to allow realization of high-performance photonic devices such as ultra-low-noise lasers and optical gyroscopes.

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