scholarly journals Metastable Dark Current in BRITE Nano-Satellite Image Sensors

2020 ◽  
Vol 12 (21) ◽  
pp. 3633
Author(s):  
Adam Popowicz ◽  
Alejandro Farah
Keyword(s):  
Dark Current ◽  
Impulsive Noise ◽  
Satellite Image ◽  
Gaussian Mixture ◽  
Image Sensor ◽  
Metastable States ◽  
Large Temperature ◽  
Fabrication Defects ◽  
Current Characteristics ◽  
The One

Dark current in charge-coupled devices (CCDs) is one of the most important sources of impulsive noise present in scientific images. While the dark current originating in the fabrication defects (mainly impurities) is stable and dependent only on temperature, the one present in the proton-irradiated sensors shows a range of metastable states which makes calibration of images almost impossible. In this paper, we show an extended analysis of such metastabilities present in Kodak KAI 11000M CCD sensors employed in the BRITE (BRIghtest Target Explorer) astrophysical mission over 7 years of in-orbit work. Our collection of dark current characteristics has an unprecedented time span, large temperature range and high number of investigated pixels. A special methodology based on the Gaussian mixture model was proposed for identification and characterization of the metastable states in the dark current. We identified several interesting properties of the metastability and found an experimental rule for the dark current in tristable defects. The results shed a new light on the dark current problems, its modeling and the mitigation in an image sensor working in space.

scholarly journals Reduction of Fluorine Diffusion and Improvement of Dark Current Using Carbon Implantation in CMOS Image Sensor

Crystals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1106
Author(s):  
Su-Young Chai ◽  
Sung-Hoon Choa
Keyword(s):  
Dark Current ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
State Density ◽  
Oxide Semiconductor ◽  
Fluorine Concentration ◽  
Current Characteristics ◽  
Minority Carriers

Recently, the demand of a high resolution complementary metal-oxide semiconductor (CMOS) image sensor is dramatically increasing. As the pixel size reduces to submicron, however, the quality of the sensor image decreases. In particular, the dark current can act as a large noise source resulting in reduction of the quality of the sensor image. Fluorine ion implantation was commonly used to improve the dark current by reducing the trap state density. However, the implanted fluorine diffused to the outside of the silicon surface and disappeared after annealing process. In this paper, we analyzed the effects of carbon implantation on the fluorine diffusion and the dark current characteristics of the CMOS image sensor. As the carbon was implanted with dose of 5.0 × 1014 and 1 × 1015 ions/cm2 in N+ area of FD region, the retained dose of fluorine was improved by more than 131% and 242%, respectively than no carbon implantation indicating that the higher concentration of the carbon implantation, the higher the retained dose of fluorine after annealing. As the retained fluorine concentration increased, the minority carriers of electrons or holes decreased by more Si-F bond formation, resulting in increasing the sheet resistance. When carbon was implanted with 1.0 × 1015 ions/cm2, the defective pixel, dark current, transient noise, and flicker were much improved by 25%, 9.4%, 1%, and 28%, respectively compared to no carbon implantation. Therefore, the diffusion of fluorine after annealing could be improved by the carbon implantation leading to improvement of the dark current characteristics.

Research status of dark current in CMOS image sensor

2021 ◽  
Author(s):  
Lei Yan ◽  
feng shi ◽  
hongchang cheng ◽  
ye yang ◽  
bin ren ◽  
...  
Keyword(s):  
Dark Current ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Research Status

Giant optical absorption and low dark current characteristics in wrinkled single layer graphene/bismuth nanorods heterostructures

Carbon ◽  
2018 ◽  
Vol 127 ◽  
pp. 596-601 ◽  
Author(s):  
Lichuan Jin ◽  
Yong Xiao ◽  
Dainan Zhang ◽  
Huaiwu Zhang ◽  
Xiaoli Tang ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Dark Current ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Current Characteristics

scholarly journals Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Sensors ◽  
2019 ◽  
Vol 19 (9) ◽  
pp. 2073 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Satoshi Shigematsu ◽  
Ryo Hirose ◽  
Ryosuke Okuyama ◽  
...  
Keyword(s):  
Dark Current ◽  
Image Sensor ◽  
Image Sensors ◽  
Silicon Wafers ◽  
Device Fabrication ◽  
Oxide Semiconductor ◽  
Device Performance ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Ion Implanted

We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon–molecular–ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of oxygen of the Czochralski silicon (CZ) substrate bulk during Complementary metal-oxide-semiconductor (CMOS) device fabrication processes. We evaluated the electrical device performance of CMOS image sensor fabricated on this type of wafer by using dark current spectroscopy. We found fewer white spot defects compared with those of intrinsic gettering (IG) silicon wafers. We believe that these hydrocarbon–molecular–ion–implanted silicon epitaxial wafers will improve the device performance of CMOS image sensors.

scholarly journals Phosphorus Versus Arsenic: Role of the Photodiode Doping Element in CMOS Image Sensor Radiation-Induced Dark Current and Random Telegraph Signal

2020 ◽  
Vol 67 (7) ◽  
pp. 1241-1250
Author(s):  
Alexandre Le Roch ◽  
Cedric Virmontois ◽  
Philippe Paillet ◽  
Jean-Marc Belloir ◽  
Serena Rizzolo ◽  
...  
Keyword(s):  
Dark Current ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Random Telegraph Signal ◽  
Doping Element ◽  
Radiation Induced

A Very Low Dark Current Temperature-Resistant, Wide Dynamic Range, Complementary Metal Oxide Semiconductor Image Sensor

2008 ◽  
Vol 47 (7) ◽  
pp. 5390-5395 ◽  
Author(s):  
Koichi Mizobuchi ◽  
Satoru Adachi ◽  
Jose Tejada ◽  
Hiromichi Oshikubo ◽  
Nana Akahane ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Dark Current ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Image Sensor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Wide Dynamic Range

Dark current characteristics of quantum wire infrared photodetectors

2007 ◽  
Vol 1 (3) ◽  
pp. 140 ◽  
Author(s):  
A. Nasr ◽  
A. Aboshosha ◽  
S.M. Al-Adl
Keyword(s):  
Dark Current ◽  
Quantum Wire ◽  
Infrared Photodetectors ◽  
Current Characteristics
Sign in / Sign up

Export Citation Format

Share Document