scholarly journals Three Destinies of Solution-Processable Polymer Light-Emitting Diodes under Long-Time Operation

Polymers ◽  
2021 ◽  
Vol 13 (11) ◽  
pp. 1853
Author(s):  
Ruslana Udovytska ◽  
Pavel Chulkin ◽  
Aleksandra Wypych-Puszkarz ◽  
Jaroslaw Jung
Keyword(s):  
Charge Transport ◽  
Indium Tin Oxide ◽  
Degradation Mechanism ◽  
Protective Layer ◽  
Transport Layer ◽  
Internal Layers ◽  
Carrier Injection ◽  
Light Emitting ◽  
Time Operation ◽  
Long Time

The article describes three different ways of polymer light-emitting diode (PLED) degradation, caused by damage of the protective layer. The electroluminescence and charge-transport properties of a completely encapsulated diode, the diodes with a leaky protective layer and diodes without encapsulation were compared under long-time exploitation. The studied devices incorporated Super Yellow light-emitting poly-(1,4-phenylenevinylene) PPV copolymer as an electroluminescence component, and (poly-(3,4-ethylenedioxythiophene)–poly-(styrene sulfonate) (PEDOT:PSS) as a charge-transport layer between the indium tin oxide (ITO) anode and aluminum–calcium cathode. To analyze the PLED degradation mechanism regarding charge transport, impedance spectroscopy was used. The values of resistance and capacitance of the internal layers revealed an effect of applied voltage on charge carrier injection and recombination. The factors responsible for the device degradation were analyzed on a macromolecular level by comparing the plots of voltage dependence of resistance and capacitance at different operation times elapsed.

Controlled Injection of Holes into ALQ3 Based Oleds by Means of An Oxidized Transport Layer

2001 ◽  
Vol 708 ◽  
Author(s):  
Mathew K. Mathai ◽  
Keith A. Higginson ◽  
Bing R. Hsieh ◽  
Fotios Papadimitrakopoulos
Keyword(s):  
Indium Tin Oxide ◽  
Oxidative Degradation ◽  
Transport Layer ◽  
Hole Injection ◽  
Carrier Injection ◽  
Salt Loading ◽  
Light Emitting ◽  
Hole Transporting ◽  
Intrinsic Degradation ◽  
Variable Conductivity

ABSTRACTIn this paper we report a method for tuning the extent of hole injection into the active light emitting tris- (8-hydroxyquinoline) aluminum (Alq3) layer in organic light emitting diodes (OLEDs). This is made possible by modifying the indium tin oxide (ITO) anode with an oxidized transport layer (OTL) comprising a hole transporting polycarbonate of N,N'-bis(3-hydroxymethyl)-N,N'-bis(phenyl) benzidine and diethylene glycol (PC-TPB-DEG) doped with varying concentrations of antimonium hexafluoride salt of N,N,N',N'-tetra-p-tolyl-4,4'-biphenyldiamine (TMTPD+ SbF6-). The conductivity of the OTL can be changed over three orders of magnitude depending on salt loading. The analysis of hole and electron current variations in these devices indicates that optimizing the conductivity of the OTL enables the modulation of hole injection into the Alq3 layer. The bipolar charge transport properties for OLEDs in which the interfacial carrier injection barriers have been minimized, are governed by the conductivities of the respective layers and in this case it is shown that the variable conductivity of the OTL does allow for better control of the same. Accordingly, varying the concentration of holes in the device indicates that beyond an optimum concentration of holes, further hole injection results in the formation of light quenching cationic species and the initiation of oxidative degradation processes in the Alq3 layer, thus accelerating the intrinsic degradation of these devices. The variable conductivity of the OTL can hence be used to minimize the occurrence of these processes.

Injecting Inter-Layers and the Built-in Potential of Blue Polymer Light-Emitting Diodes

2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Basic Structure ◽  
Thin Layers ◽  
Carrier Injection ◽  
Semiconducting Polymer ◽  
Light Emitting ◽  
Physical Mechanisms ◽  
Organic Solid ◽  
Polymer Light Emitting Diodes

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.

Fabrication of Micro-OLEDs by Room-temperature Curing Nanocontact-print Lithography Using DLC Molds

2012 ◽  
Vol 1511 ◽  
Author(s):  
Ippei Ishikawa ◽  
Keisuke Sakurai ◽  
Shuji Kiyohara ◽  
Taisuke Okuno ◽  
Hideto Tanoue ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Nanoimprint Lithography ◽  
Room Temperature ◽  
Hole Transport ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Insulating Layer ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Ito Glass

ABSTRACTThe microfabrication technologiesfor organic light-emitting devices (OLEDs) are essential to the fabrication of the next generation of light-emitting devices. The micro-OLEDs fabricated by room-temperature curing nanoimprint lithography (RTC-NIL) using diamond molds have been investigated. However, light emissions from 10 μm-square-dot OLEDs fabricated by the RTC-NIL method have not been uniform. Therefore, we proposed the fabrication of micro-OLEDs by room-temperature curing nanocontact-print lithography (RTC-NCL) using the diamond-like carbon (DLC) mold. The DLC molds used in RTC-NCL were fabricated by an electron cyclotron resonance (ECR) oxygen ion shower with polysiloxane oxide mask in electron beam (EB) lithography technology. The mold patterns are square and rectangle dots which has 10 µm-width, 10 µm-width and50 µm-length, respectively. The height of the patterns is 500 nm. The DLC molds were used to form the insulating layer of polysiloxane in RTC-NCL. We carried out the RTC-NCL process using the DLC mold under the following optimum conditions: 0.1 MPa-pressure for coating DLC mold with polysiloxane film, 2.1 MPa-pressure for transferring polysiloxane from DLC mold pattern to indium tin oxide (ITO) glass substrate. We deposited N, N'-Diphenyl -N, N'-di (m-tolyl)benzidine (TPD) [40 nm-thickness] as hole transport layer / Tris(8-quinolinolato)aluminum (Alq3) [40 nm-thickness] as electron transport layer / Al [200 nm-thickness] as cathode on ITO glass substrateas anode in this order. We succeeded in formation of the insulating layer with square and rectangle dots which has 10 µm-width,10 µm-width and 50 µm-length, and operation of micro-OLEDs by RTC-NIL using DLC molds.

A New Prediction Model on the Luminance of OLEDs Subjected to Different Reverse Biases for Alleviating Degradation in AMOLED Displays

2014 ◽  
Author(s):  
Paul C.-P. Chao ◽  
Yen-Ping Hsu ◽  
Yung-Hua Kao ◽  
Kuei-Yu Lee
Keyword(s):  
Reverse Bias ◽  
High Efficiency ◽  
Life Time ◽  
Density Currents ◽  
High Brightness ◽  
Light Emitting ◽  
Wide Viewing Angle ◽  
Time Operation ◽  
Long Time ◽  
History Of

Organic light-emitting diodes (OLEDs) have drawn much attention in areas of displays and varied illumination devices due to multiple advantages, such as high brightness, high efficiency, wide viewing angle, and simple structure. However, the long-time degradation of OLED emission is a serious drawback. This degradation was investigated by past works, which pointed out that the degradation was induced by high-density currents through OLED component under the long-time operation [1][2]. Proposed by a past work [3], different reverse biases was imposed on OLED components in display frames to alleviate the long-time degradation on OLEDs. Most recently, along with the reverse bias, new pixel circuits [4][5] for AMOLED displays are designed to alleviate OLED degradation, thus successfully extending OLED life time. However, since emission luminances in different frame times during AMOLED displaying differs significantly for displaying varied images, the OLED degradation evolves in a highly unpredictable fashion. In this study, based on valid theories, the voltage across the OLED is first used as indicator for OLED degradation. Then the relation between the level of OLED degradation, in terms of OLED’s cross voltage, and the history of imposing reverse biases are precisely modeled. With the model, the degradation of the OLED under reverse bias to extend lifetime can be successfully predicted. Based on this model, engineers can then optimize the applied reverse bias on OLEDs to maximize the OLED lifetime for varied display requirement.

Theoretical Study on Recombination Efficiency at S-DPVBi/Alq3 Interface in OLED

2012 ◽  
Vol 629 ◽  
pp. 44-48
Author(s):  
Young Wook Hwang ◽  
Kwang Sik Kim ◽  
Tae Young Won
Keyword(s):  
Indium Tin Oxide ◽  
Numerical Study ◽  
Organic Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
The Finite Element Method ◽  
Light Emitting ◽  
Recombination Efficiency ◽  
Interface Barrier ◽  
Recombination Kinetics

In this paper, we report our numerical study on the electrical-optical properties of the organic light emitting diodes (OLEDs) devices with n-doped layer, which is inserted in an effort to reduce the interface barrier between the cathode and the ETL(electron transport layer). In order to anlayze the electrical and optical characteristics such as the transport behavior of carriers, recombination kinetics, and emission property, we undertake the finite element method (FEM) in OLEDs. Our model includes Poisson’s equation, continuity equation to account for behavior of electrons and holes and the exciton continuity/transfer equation to account for recombination of carriers. We employ the multilayer structure that consists of indium tin oxide (ITO); 2, 2’, 7, 7’ –tetrakis (N, N-diphenylamine) - 9, 9’- spirobi-fluorene (S-TAD); 4, 4’- bis (2,2’- diphenylvinyl) - 1,1’- spirobiphenyl (S-DPVBi); tris (8-quinolinolato) aluminium (Alq3); calsium(Ca).

The Study of Hole Injection in OLEDs with Ultra-Thin Sol-Gel TiO2 Layer

2011 ◽  
Vol 189-193 ◽  
pp. 42-46
Author(s):  
You Wang Hu ◽  
Xiao Yan Sun ◽  
Jian Duan
Keyword(s):  
Sol Gel ◽  
Hole Transport ◽  
Organic Light Emitting Diodes ◽  
Transport Layer ◽  
Hole Injection ◽  
Hole Transport Layer ◽  
Carrier Injection ◽  
Light Emitting ◽  
Organic Light ◽  
Pre Treatment

Organic light-emitting diodes (OLEDs) with inserting an ultrathin sol–gel titanium oxide (TiO2) buffer layer between the ITO anode and hole transport layer (HTL) were fabricated. The carrier injection and the device efficiency were affected by surface morphology of TiO2, which was changed by different plasma pre-treatment of ITO. Treated by CF4 plasma, the TiO2 layer is the smoothest, and treated by H2 plasma it is like island. The TiO2 layer like island is favor of carrier injection from the anode, which was attributed to the point discharged.

Simulation and Optimization of C60-Based Organic Light-Emitting Diodes

2021 ◽  
Vol 1026 ◽  
pp. 142-146
Author(s):  
Shuo Wang
Keyword(s):  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Organic Light Emitting Diodes ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Optical Parameters ◽  
Light Emitting ◽  
Simulation And Optimization ◽  
Organic Light

In this work we present a detailed analysis of the current-voltage variance from tris(8-hydroxyquinoline)aluminum (Alq3) based organic light emitting diodes using general-purpose photovoltaic device model (GPVDM) software as a function of: the choice of C60, the thickness of emission layer and hole-transport layer. The electrical and optical parameters of all layers were extracted from the material directory available in GPVDM. The calculations fully consider dispersion in glass substrate, indium tin oxide anode, the organic layers as well as the dispersion in the metal cathode. As expected, applied voltage was strongly dependent on the thickness of the function layer inside the devices. Finally, guidelines for designing devices with optimum turn-on voltage and thickness are presented.

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