scholarly journals Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect Transistors

Polymers ◽  
2020 ◽  
Vol 12 (11) ◽  
pp. 2662
Author(s):  
Julia Fidyk ◽  
Witold Waliszewski ◽  
Piotr Sleczkowski ◽  
Adam Kiersnowski ◽  
Wojciech Pisula ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Transport ◽  
Solution Temperature ◽  
Attractive Alternative ◽  
Large Area ◽  
Light Emitting ◽  
Practical Applications

Organic electronics became an attractive alternative for practical applications in complementary logic circuits due to the unique features of organic semiconductors such as solution processability and ease of large-area manufacturing. Bulk heterojunctions (BHJ), consisting of a blend of two organic semiconductors of different electronic affinities, allow fabrication of a broad range of devices such as light-emitting transistors, light-emitting diodes, photovoltaics, photodetectors, ambipolar transistors and sensors. In this work, the charge carrier transport of BHJ films in field-effect transistors is switched from electron to hole domination upon processing and post-treatment. Low molecular weight n-type N,N′-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI8-CN2) was blended with p-type poly[2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene] (PBTTT-C14) and deposited by spin-coating to form BHJ films. Systematic investigation of the role of rotation speed, solution temperature, and thermal annealing on thin film morphology was performed using atomic force microscopy, scanning electron microscopy, and grazing incidence wide-angle X-ray scattering. It has been determined that upon thermal annealing the BHJ morphology is modified from small interconnected PDI8-CN2 crystals uniformly distributed in the polymer fraction to large planar PDI8-CN2 crystal domains on top of the blend film, leading to the switch from electron to hole transport in field-effect transistors.

scholarly journals Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 901
Author(s):  
Gizem Acar ◽  
Muhammad Javaid Iqbal ◽  
Mujeeb Ullah Chaudhry
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Limiting Factors ◽  
Hole Injection ◽  
Large Area ◽  
Device Structure ◽  
Light Emitting ◽  
Emission Area ◽  
P Type

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm2 V−1 s−1 and EQE of 1.6% at a luminance of 2600 cd m−2. Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.

Light-Emitting Field-Effect Transistors Consisting of Bilayer-Crystal Organic Semiconductors

2011 ◽  
Vol 21 (15) ◽  
pp. 2854-2860 ◽  
Author(s):  
Kentaro Kajiwara ◽  
Kohei Terasaki ◽  
Takeshi Yamao ◽  
Shu Hotta
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Light Emitting

Organic Materials for Large Area Electronics

2008 ◽  
Vol 608 ◽  
pp. 159-179 ◽  
Author(s):  
Richard Friend
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Organic Materials ◽  
Field Effect Transistors ◽  
Semiconductor Devices ◽  
Large Area ◽  
Active Matrix ◽  
Semiconductor Physics ◽  
Light Emitting ◽  
Wide Range

Organic materials have been developed to operate as the active semiconductor in a wide range of semiconductor devices, including light-emitting diodes, LEDs, field-effect transistors, FETs, and photovoltaic diodes, PVs. The ability to process these materials as thin films over large areas makes possible a range of applications, currently in displays, as LEDs and as active matrix FET arrays, and solar cells. This article reviews developments in semiconductor physics of these materials and in their application in semiconductor devices

scholarly journals A Gated Four Probe Technique for Field Effect Measurements on Disordered Organic Semiconductors

2008 ◽  
Vol 63 (9) ◽  
pp. 591-595 ◽  
Author(s):  
Elizabeth von Hauff ◽  
Nicolas Spethmann ◽  
Jürgen Parisi
Keyword(s):  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Transport ◽  
Organic Field Effect Transistors ◽  
Transport Parameters ◽  
Electric Field Dependence ◽  
High Impedance ◽  
Current Voltage

A gated four probe measurement technique to isolate contact resistances in field effect measurementson disordered organic semiconductors was investigated. Organic field effect transistors (OFETs) were prepared with two additional electrodes in the contact geometry protruding into the source-drain channel to monitor the variation in potential across the channel. Two high impedance electrometers were used to determine the potential at the contacts. This technique allows to directly determine the magnitude of the parasitic contact resistances between metal contact and organic semiconductor from the drop in potential at the contact regions. The effects of contact resistances, which can falsify measurements on bulk transport parameters such as the field effect mobility, can be then eliminated during material characterization. Additionally, the temperature and electric field dependence of the contact resistances offers valuable information about the charge injection and extraction processes between metal and organic semiconductor. The effects of the four probe geometry, specifically the effect of the channel electrodes on the current-voltage characteristics, of hole transport in a polythiophene (P3HT) OFET with Au contacts were investigated and found not to influence device performance, except at currents « 1 nA. The IV characteristics were shown to follow the expected FET behaviour. From the variation in potential along the channel it was found that contact resistances at the source contact (charge injecting contact) are minimal while contact resistances at thedrain contact (charge extracting contact) are significant, resulting in a much lower effective sourcedrain voltage than that applied to the device.

Efficient Stacked OLED processed by Organic Vapor Phase Deposition (OVPD)

2015 ◽  
Vol 1788 ◽  
pp. 13-18
Author(s):  
M. Brast ◽  
S. Axmann ◽  
M. Slawinski ◽  
M. Weingarten ◽  
F. Lindla ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Voltage Drop ◽  
Hole Transport ◽  
Hole Injection ◽  
Large Area ◽  
Charge Generation ◽  
Light Emitting ◽  
Precise Control ◽  
Organic Vapor Phase Deposition ◽  
P Type

ABSTRACTThe development of efficient large-area organic light emitting diodes (OLED) requires reliable and easily processable charge generation layers (CGL) with low excess voltage drop and high optical transparency. OVPD offers the advantage of a precise control of layer morphology, composition and thickness and is a powerful method for the deposition of advanced OLED designs. In this work, electrical doping of organic semiconductors using OVPD is investigated and applied to stacked OLED utilizing inorganic/organic CGL. The organic p-type dopant NDP-9 of Novaled GmbH is used for doping the hole transport material N,N‘-diphenyl-N,N‘-bis(1-naphthylphenyl)-1,1‘-biphenyl-4,4‘-diamine (α-NPD) in an AIXTRON OVPD tool. A doping concentration of 8 vol.% of NDP-9 in α-NPD is found optimal for hole injection as well as conductivity. This dopant concentration was employed in CGL with the structure: electron transport material/LiF/Al/α-NPD:8 vol.% NDP-9. External quantum efficiencies (EQE) of 15%, 35% and 50% and luminous efficiencies of 37 lm/W, 45 lm/W and 45 lm/W at 1000 cd/m2 are demonstrated for single, double- and triple-unit green phosphorescent OLED, respectively.

Hole transport in polymeric field effect transistors and light-emitting diodes

2003 ◽  
Author(s):  
Cristina Tanase ◽  
Paul W. M. Blom ◽  
Eduard J. Meijer ◽  
Dago M. de Leeuw
Keyword(s):  
Field Effect ◽  
Light Emitting Diodes ◽  
Field Effect Transistors ◽  
Hole Transport ◽  
Light Emitting

High-performance amorphous organic semiconductor-based vertical field-effect transistors and light-emitting transistors

Nanoscale ◽  
2020 ◽  
Vol 12 (35) ◽  
pp. 18371-18378 ◽  
Author(s):  
Haikuo Gao ◽  
Jinyu Liu ◽  
Zhengsheng Qin ◽  
Tianyu Wang ◽  
Can Gao ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optoelectronic Devices ◽  
Light Emitting ◽  
Vertical Field ◽  
Organic Optoelectronic Devices ◽  
Organic Optoelectronic ◽  
Vertical Field Effect

Two kinds of vertical organic optoelectronic devices were constructed based on amorphous organic semiconductors and high device performances were achieved.

scholarly journals Solution-Processed, Large-Area, Two-Dimensional Crystals of Organic Semiconductors for Field-Effect Transistors and Phototransistors

2020 ◽  
Vol 6 (5) ◽  
pp. 636-652
Author(s):  
Cong Wang ◽  
Beibei Fu ◽  
Xiaotao Zhang ◽  
Rongjin Li ◽  
Huanli Dong ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
Large Area ◽  
Solution Processed
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