Light-Emitting Field-Effect Transistors Consisting of Bilayer-Crystal Organic Semiconductors

2011 ◽  
Vol 21 (15) ◽  
pp. 2854-2860 ◽  
Author(s):  
Kentaro Kajiwara ◽  
Kohei Terasaki ◽  
Takeshi Yamao ◽  
Shu Hotta
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Light Emitting

scholarly journals Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect Transistors

Polymers ◽  
2020 ◽  
Vol 12 (11) ◽  
pp. 2662
Author(s):  
Julia Fidyk ◽  
Witold Waliszewski ◽  
Piotr Sleczkowski ◽  
Adam Kiersnowski ◽  
Wojciech Pisula ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Transport ◽  
Solution Temperature ◽  
Attractive Alternative ◽  
Large Area ◽  
Light Emitting ◽  
Practical Applications

Organic electronics became an attractive alternative for practical applications in complementary logic circuits due to the unique features of organic semiconductors such as solution processability and ease of large-area manufacturing. Bulk heterojunctions (BHJ), consisting of a blend of two organic semiconductors of different electronic affinities, allow fabrication of a broad range of devices such as light-emitting transistors, light-emitting diodes, photovoltaics, photodetectors, ambipolar transistors and sensors. In this work, the charge carrier transport of BHJ films in field-effect transistors is switched from electron to hole domination upon processing and post-treatment. Low molecular weight n-type N,N′-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI8-CN2) was blended with p-type poly[2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene] (PBTTT-C14) and deposited by spin-coating to form BHJ films. Systematic investigation of the role of rotation speed, solution temperature, and thermal annealing on thin film morphology was performed using atomic force microscopy, scanning electron microscopy, and grazing incidence wide-angle X-ray scattering. It has been determined that upon thermal annealing the BHJ morphology is modified from small interconnected PDI8-CN2 crystals uniformly distributed in the polymer fraction to large planar PDI8-CN2 crystal domains on top of the blend film, leading to the switch from electron to hole transport in field-effect transistors.

High-performance amorphous organic semiconductor-based vertical field-effect transistors and light-emitting transistors

Nanoscale ◽  
2020 ◽  
Vol 12 (35) ◽  
pp. 18371-18378 ◽  
Author(s):  
Haikuo Gao ◽  
Jinyu Liu ◽  
Zhengsheng Qin ◽  
Tianyu Wang ◽  
Can Gao ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optoelectronic Devices ◽  
Light Emitting ◽  
Vertical Field ◽  
Organic Optoelectronic Devices ◽  
Organic Optoelectronic ◽  
Vertical Field Effect

Two kinds of vertical organic optoelectronic devices were constructed based on amorphous organic semiconductors and high device performances were achieved.

Three-dimensional Organic Field-effect Transistors on Plastic Substrates: Flexible Transistors with Very High Output Current

2009 ◽  
Vol 1197 ◽  
Author(s):  
Jun Takeya ◽  
M. Uno ◽  
Kengo Nakayama
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Three Dimensional ◽  
Organic Transistors ◽  
Organic Field Effect Transistors ◽  
Output Current ◽  
Light Emitting ◽  
Plastic Substrates

AbstractAttractiveness of organic field-effect transistors are in their low-cost and easy fabrication processes as well as their mechanical flexibility, while a significant drawback has been their poorer transistor performances than those of silicon and oxide semiconductors because of lower carrier mobility in organic semiconductors. We have developed an easy MEMS-based process to fabricate three-dimensional organic transistors with metal-insulator-semiconductor structures of multiple vertical channels on plastic platforms. The design maximizes the space availability and the output current per area. The flexible three-dimensional organic transistors indeed present outstanding current of ∼ 0.5 A/cm2, which is more than sufficient for driving pixels of typical organic light-emitting diodes. High on-off ratio up to 107 is also demonstrated.

ChemInform Abstract: Material Design of Organic Semiconductors for Light Emitting Organic Field-Effect Transistors and Their Device Characteristics

ChemInform ◽  
2008 ◽  
Vol 39 (44) ◽  
Author(s):  
Masayuki Yahiro ◽  
Tomo Sakanoue ◽  
Hiroyuki Uchiuzou ◽  
Takahito Oyamada ◽  
Akio Toshimitsu ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Material Design ◽  
Organic Field Effect Transistors ◽  
Light Emitting

Unification of the Charge Transport in Field-Effect Transistors and Light-Emitting Diodes Based on Organic Semiconductors

2011 ◽  
Vol 687 ◽  
pp. 222-227 ◽  
Author(s):  
L. G. Wang ◽  
Huai Wu Zhang ◽  
Xiao Li Tang ◽  
Yuan Qiang Song
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconducting Polymers ◽  
Light Emitting ◽  
Current Voltage ◽  
Physically Based ◽  
Current Voltage Characteristics ◽  
Gaussian Disorder Model

A physically based mathematical model for the charge transport in field-effect transistors and lighting-emitting diodes based on disordered organic semiconductors has been presented. It is developed basing on the Gaussian disorder model and extends the pioneering work of Pasveer et al. [Phys. Rev. Lett. 94, 206601 (2005)] to higher carrier densities and large electric field. The experimental current voltage characteristics in devices based on semiconducting polymers are excellently reproduced with this model. Furthermore, we calculate and analyze some electrical properties for the relevant polymers in detail using this model.

Polyfluorenes as Organic Semiconductors for Polymeric Field Effect Transistors

2003 ◽  
Vol 771 ◽  
Author(s):  
David J. Brennan ◽  
Paul H. Townsend ◽  
Dean M. Welsh ◽  
Mitchell G. Dibbs ◽  
Jeff M. Shaw ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Atmospheric Oxygen ◽  
Electrical Characterization ◽  
Environmental Stability ◽  
Light Emitting ◽  
Chemical Company ◽  
Backbone Structure

Polyfluorenes are a class of polyaromatic macromolecules that are characterized by an alternating backbone structure that consists of a 9,9-dialkylfluorene unit in combination with another aromatic group. The nature of this aromatic unit plays a key role in the electronic properties of the polymers. For example, polyfluorenes which combine chromophoric and charge transporting aromatic units have received a great deal of attention over the last several years as the emissive layer in polymeric light emitting diodes [LUMATION* Light-Emitting Polymers (LEPs)]. More recently, polyfluorenes have also been designed to perform as the organic semiconducting layer in polymeric field effect transistors (PFETs). This effort has led to a class of polymeric semiconductors with an excellent combination of charge mobility, environmental stability, and processability. One such polymer is the polyfluorene based on an alternating backbone of 9,9-dioctylfluorene and 2,2'-bithiophene units. This material has been shown to have charge mobilities as high as 0.02 cm2/V-s with current on/off ratios of up to 106. The poly(fluorene-bithiophene) is more resistant to doping by atmospheric oxygen than other polymeric semiconductors such as poly(3-hexylthiophene). Inks based on solutions of poly(fluorene-bithiophene) in xylene, mesitylene, and other solvents have also been prepared. The paper will focus on the recent advances in the synthesis, fabrication, and electrical characterization of poly(fluorene-bithiophene). *Trademark of The Dow Chemical Company

scholarly journals Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 901
Author(s):  
Gizem Acar ◽  
Muhammad Javaid Iqbal ◽  
Mujeeb Ullah Chaudhry
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Limiting Factors ◽  
Hole Injection ◽  
Large Area ◽  
Device Structure ◽  
Light Emitting ◽  
Emission Area ◽  
P Type

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm2 V−1 s−1 and EQE of 1.6% at a luminance of 2600 cd m−2. Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.

scholarly journals Oligofuran–Benzothiadiazole Co-oligomers: Synthesis, Optoelectronic Properties and Reactivity

2021 ◽  
Vol 03 (02) ◽  
pp. 303-308
Author(s):  
Dror Ben Abba Amiel ◽  
Choongik Kim ◽  
Ori Gidron
Keyword(s):  
Organic Solar Cells ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Light Emitting Diodes ◽  
Organic Field Effect Transistors ◽  
Active Materials ◽  
Light Emitting ◽  
Organic Light ◽  
Donor Acceptor ◽  
Optical Bandgaps

Donor–acceptor–donor (DAD) triad systems are commonly applied as active materials in ambipolar organic field-effect transistors, organic solar cells, and NIR-emitting organic light-emitting diodes. Often, these triads utilize oligothiophenes as donors, whereas their oxygen-containing analogs, oligofurans, are far less studied in this setup. Here we introduce a family of DAD triads in which the donors are oligofurans and the acceptor is benzothiadiazole. In a combined computational and experimental study, we show that these triads display optical bandgaps similar to those of their thiophene analogs, and that a bifuran donor is sufficient to produce emission in the NIR spectral region. The presence of a central acceptor unit increases the photostability of oligofuran-based DAD systems compared with parent oligofurans of the similar length.

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