Polymer mask-weakening grain-boundary effect: towards high-performance organic thin-film transistors with mobility closing to 20 cm2 V−1 s−1
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Polystyrene-based masks are fabricated to produce top-contact high-resolution (5 μm) electrodes. With this mask, the mobility of DPA-based thin-film transistors could reach 19.22 cm2 V−1 s−1, which is a new breakthrough for DPA thin-film transistors.
2010 ◽
Vol 130
(2)
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pp. 161-166
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2019 ◽
Vol 11
(10)
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pp. 10089-10098
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2015 ◽
Vol 2
(2)
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pp. 1500209
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2004 ◽
Vol 126
(11)
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pp. 3378-3379
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