scholarly journals Preparation of Nanocomposite-Based High Performance Organic Field Effect Transistor via Solution Floating Method and Mechanical Property Evaluation

Polymers ◽  
2020 ◽  
Vol 12 (5) ◽  
pp. 1046
Author(s):  
Youn Kim ◽  
Yeon Ju Kwon ◽  
Seungwan Ryu ◽  
Cheol Jin Lee ◽  
Jea Uk Lee
Keyword(s):  
Mechanical Properties ◽  
Nanocomposite Film ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Hybridization Technique ◽  
Sio2 Substrate ◽  
Exfoliated Graphene ◽  
Property Evaluation ◽  
Order Of Magnitude

We demonstrate that using nanocomposite thin films consisting of semiconducting polymer, poly(3-hexylthiophene) (P3HT), and electrochemically exfoliated graphene (EEG) for the active channel layer of organic field-effect transistors (OFETs) improves both device performances and mechanical properties. The nanocomposite film was developed by directly blending P3HT solution with a dispersion of EEG at various weight proportions and simply transferring to an Si/SiO2 substrate by the solution floating method. The OFET based on P3HT/EEG nanocomposite film showed approximately twice higher field-effect mobility of 0.0391 cm2·V−1·s−1 and one order of magnitude greater on/off ratio of ~104 compared with the OFET based on pristine P3HT. We also measured the mechanical properties of P3HT/EEG nanocomposite film via film-on-elastomer methods, which confirms that the P3HT/EEG nanocomposite film exhibited approximately 2.4 times higher modulus (3.29 GPa) than that of the P3HT film (1.38 GPa), while maintaining the good bending flexibility and durability over 10.0% of bending strain and bending cycles (1000 cycles). It was proved that the polymer hybridization technique, which involves adding EEG to a conjugated polymer, is a powerful route for enhancing both device performances and mechanical properties while maintaining the flexible characteristics of OFET devices.

scholarly journals Microwave-assisted calcination of electrospun indium–gallium–zinc oxide nanofibers for high-performance field-effect transistors

RSC Advances ◽  
2020 ◽  
Vol 10 (63) ◽  
pp. 38351-38356
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Mechanical Properties ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Indium Gallium Zinc Oxide ◽  
Microwave Assisted ◽  
Indium Gallium ◽  
Optical And Mechanical Properties

We report a systematic study on the microstructure and optical and mechanical properties of IGZO nanofibers for high performance field-effect transistors (FETs), as well as the effects of microwave-assisted calcination on the electrical properties and instability of FETs.

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

scholarly journals Field-Effect Transistors: Highly π-Extended Copolymers with Diketopyrrolopyrrole Moieties for High-Performance Field-Effect Transistors (Adv. Mater. 34/2012)

2012 ◽  
Vol 24 (34) ◽  
pp. 4589-4589 ◽  
Author(s):  
Huajie Chen ◽  
Yunlong Guo ◽  
Gui Yu ◽  
Yan Zhao ◽  
Ji Zhang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors

Plastic Electronics: The Influence of Morphology on High-Performance Polymer Field-Effect Transistors (Adv. Mater. 2/2009)

2009 ◽  
Vol 21 (2) ◽  
pp. NA-NA ◽  
Author(s):  
Hoi Nok Tsao ◽  
Don Cho ◽  
Jens Wenzel Andreasen ◽  
Ali Rouhanipour ◽  
Dag W. Breiby ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Plastic Electronics ◽  
High Performance Polymer

High performance solution-processable tetrathienoacene (TTAR) based small molecules for organic field effect transistors (OFETs)

2017 ◽  
Vol 53 (43) ◽  
pp. 5898-5901 ◽  
Author(s):  
Sureshraju Vegiraju ◽  
Deng-Yi Huang ◽  
Pragya Priyanka ◽  
Yo-Shan Li ◽  
Xian-Lun Luo ◽  
...  
Keyword(s):  
Small Molecules ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Solution Processable

DDTT-TTARexhibits the highest mobility of 0.81 cm2V−1s−1.

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