scholarly journals Template-Assisted Co-Ni Nanowire Arrays

Nanomaterials ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 1446 ◽  
Author(s):  
Vidu ◽  
Predescu ◽  
Matei ◽  
Berbecaru ◽  
Pantilimon ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Ratio ◽  
Deposition Potential ◽  
Comprehensive Analysis ◽  
Nanowire Arrays ◽  
Positive Potential ◽  
Ni Content ◽  
The Comparative Study ◽  
Anomalous Deposition ◽  
Compositional Characterization

A comparison was performed between Co-Ni thin films and template-assisted nanowires arrays obtained by electrochemical co-deposition. To reduce the effects of anomalous deposition and increase the Ni content in the deposit, an electrolyte with three times more Ni than Co in atomic ratio was chosen. Electrochemical deposition was performed at constant potentials chosen in the range from E = −0.8 to −1.2 V vs. Ag/AgCl. Cyclic voltammetry, chronoamperometry, and charge stripping techniques were used to characterize and compare the electrochemical behavior of Co-Ni films and nanowires. Morphological and compositional characterization was performed by scanning electron microscopy (SEM/EDAX) to assess the influence of the deposition potential on the growth of film and nanowires. A comprehensive analysis of the deposit growth rates for thin films and nanowires is presented taking into consideration the hydrogen evolution and anomalous deposition. The comparative study of the composition of film and nanowires obtained at different deposition potentials has shown that deposition of nanowires with a film-like composition takes place at more positive potential than thin film.

Structural and Electrical Properties of Mn-Co-Ni-O Thin Films Prepared by Dip-Coating Technique

1992 ◽  
Vol 271 ◽  
Author(s):  
Shoji Kaneko ◽  
Naoto Mazuka ◽  
Tamotsu Yamada
Keyword(s):  
Thin Films ◽  
Spinel Phase ◽  
Dip Coating ◽  
Atomic Ratio ◽  
Heating Process ◽  
Electric Resistance ◽  
Glass Substrates ◽  
Methanol Solutions ◽  
Structural And Electrical Properties ◽  
Dip Coating Technique

ABSTRACTMn-Co-Ni-O thin films of metal atomic ratio 3.0 : 1.9 : 1.0 were prepared on glass substrates from methanol solutions of the corresponding metal β-diketonates by dip-coating. As-prepared films were heated at 900°C for 1 h mostly after being calcined at 450°C for 5 min. The film thickness increased with increasing concentration of the solution as well as the number of lifting times. However, the effect was not apparent with the sample prepared without calcination. The prepared films were observed to crystallize into a complicated spinel phase by the heating process at 900°C for 1 h. The surface of the dense film composed of particles of about 0.2 μm diameter, was almost even. The thermal and aging responses of electric resistance showed the film to be a good material as a thermistor.

Electrical Properties of β-FeSi2 Thin Films on Insulating Substrates

2003 ◽  
Vol 796 ◽  
Author(s):  
Kensuke Akiyama ◽  
Takeshi Kimura ◽  
Shin Nishiyama ◽  
Takeo Hattori ◽  
Naoki Ohashi ◽  
...  
Keyword(s):  
Thin Films ◽  
Iron Silicide ◽  
Amorphous Film ◽  
Rf Magnetron Sputtering ◽  
Atomic Ratio ◽  
Similar Temperature Dependence ◽  
Electrical Conductivities ◽  
Similar Temperature ◽  
Band Conduction ◽  
Insulating Substrates

ABSTRACTIron silicide thin films were prepared on insulating substrates using RF magnetron sputtering method. Amorphous, polycrystalline and epitaxial β-FeSi2 were obtained on MgO(001), Al2O3(110) and Al2O3(001) substrates, respectively. Electrical conductivities of these films showed similar temperature dependence. Intrinsic band conduction and hopping conduction mechanism were predominant above and below 600K, respectively. The localized ordering in the polycrystalline and epitaxial films that controled the movement of carriers were as low as in the amorphous film. For the epitaxial β-FeSi2 film, electrical conductivity below 600K were affected by atomic ratio of silicon to iron (Si/Fe) in the films, because the localized ordering in the films decreased as Si/Fe atomic ratio decreased.

Role of Deposition Potential on the Optical Properties of SnSSe Thin Films

2019 ◽  
Vol 35 (37) ◽  
pp. 1-10 ◽  
Author(s):  
Thaiyan Mahalingam ◽  
Vickraman Dhanasekaran ◽  
Ganesan Ravi ◽  
Rathinam Chandramohan ◽  
Adaikalam Kathalingam ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Deposition Potential

Electrodeposited Iron(III) Oxide (α-Fe2O3) Thermoelectric Thin Films

2016 ◽  
Vol 701 ◽  
pp. 23-27 ◽  
Author(s):  
Mohd Zuhri Shaiful Azni ◽  
Ho Kee Tan ◽  
Pei Ling Low ◽  
Nisha Kumari Devaraj ◽  
Boon Hoong Ong ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Deposition Time ◽  
Deposition Potential ◽  
Electrical Conductivities ◽  
Potentiostatic Electrodeposition ◽  
Layered Growth ◽  
Time Parameters ◽  
Thermoelectric Thin Films ◽  
Deposited Films

α-Fe2O3 thermoelectric thin films were electrodeposited onto copper substrates using chloride-based electrolytes by means of potentiostatic electrodeposition. The influence of several electrodeposition parameters on the surface morphology, elemental composition and electrical conductivity of the deposited films was studied and analyzed. The deposits formed porous, wire-like morphology, with the smallest width measured to be ~60 nm. The wires tend to aggregate to form clusters, in addition to multi-layered growth of the wires. Between the parameters studied, electrolyte concentration and deposition time parameters have higher influences on the electrical conductivity of the deposited films, with the increment up to two fold higher. Deposition potential parameter offered the lowest capability to improve on the electrical conductivity in addition to the non-uniform distribution of the measured electrical conductivities. The tunable electrical conductivity is favorable for improving the performance of α-Fe2O3 films for thermoelectric applications.

Transport Properties of Granular Nix(SiO2)100−x Thin Films

1990 ◽  
Vol 195 ◽  
Author(s):  
John R. Beamish ◽  
B.M. Patterson ◽  
K.M. Unruh
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Electrical Transport ◽  
Low Temperatures ◽  
Room Temperature ◽  
Volume Percent ◽  
Ni Content ◽  
Resistivity Minimum ◽  
Temperature Coefficient Of Resistivity ◽  
Sputter Deposited

ABSTRACTWe have studied the electrical transport behavior of sputter deposited Nix(SiO2)100−x thin films between room temperature and 100 mK and, at selected temperatures, in applied magnetic fields up to 6 T. As the Ni concentration x is reduced, the resistivity increases systematically. At a Ni concentration (nominal) of about x–70 atomic percent (38 volume percent) the room temperature coefficient of resistivity changes sign. For Ni concentrations greater than 70 percent the resistance first decreases with temperature then increases logarithmically at, low temperatures. This increase becomes smaller and the resistivity minimum moves to progressively lower temperatures as the Ni concentration increases. In films with less than x–70 percent Ni, the resistivity has a temperature dependence of the form ρ(T)–ρo exp \(To/T)α] between room temperature and about 5 K. The exponent a is about 1/2 and To increases with decreasing Ni content. Below 1 K, however, the resistivity increases much less rapidly, with a temperature dependence independent of Ni concentration. In all films the magnetoresistance is small and negative.

scholarly journals Formation of Highly Ordered Platinum Nanowire Arrays on Silicon via Laser-Induced Self-Organization

Nanomaterials ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 1031
Author(s):  
Michael Dasbach ◽  
Hendrik M. Reinhardt ◽  
Norbert A. Hampp
Keyword(s):  
Thin Films ◽  
Nanowire Arrays ◽  
Surface Structures ◽  
Self Organization ◽  
Periodic Patterns ◽  
Periodic Surface ◽  
Platinum Nanowires ◽  
Nanosecond Pulsed Laser ◽  
Sputter Deposited ◽  
20 Nm

Laser-induced periodic surface structures (LIPSS) provide an elegant solution for the generation of highly ordered periodic patterns on the surface of solids. In this study, LIPSS are utilized for the formation of periodic platinum nanowire arrays. In a process based on laser-stimulated self-organization, platinum thin films, sputter-deposited onto silicon, are transformed into nanowire arrays with an average periodicity of 538 nm. The width of the platinum nanowires is adjustable in a range from 20 nm to 250 nm by simply adjusting the thickness of the initial platinum thin films in a range from 0.3 nm to 4.3 nm. With increasing width, platinum nanowires show a rising tendency to sink into the surface of the silicon wafer, thus indicating alloying between platinum and silicon upon LIPSS-formation by a nanosecond-pulsed laser. The Pt/silicon wires may be etched away, leaving a complementary nanostructure in the silicon surface.

The effect of Ni content on gas-sensing behaviors of ZnO–NiO p–n composite thin films grown through radio-frequency cosputtering of ceramic ZnO and NiO targets

CrystEngComm ◽  
2020 ◽  
Vol 22 (13) ◽  
pp. 2315-2326 ◽  
Author(s):  
Yuan-Chang Liang ◽  
Yen-Cheng Chang
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Gas Sensing ◽  
Dual Phase ◽  
Composite Thin Films ◽  
Ni Content

In this study, dual phase ZnO–NiO p–n composite thin films were grown through radio-frequency cosputtering of ceramic ZnO and NiO targets.

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