Structural and Electrical Properties of Mn-Co-Ni-O Thin Films Prepared by Dip-Coating Technique

1992 ◽  
Vol 271 ◽  
Author(s):  
Shoji Kaneko ◽  
Naoto Mazuka ◽  
Tamotsu Yamada
Keyword(s):  
Thin Films ◽  
Spinel Phase ◽  
Dip Coating ◽  
Atomic Ratio ◽  
Heating Process ◽  
Electric Resistance ◽  
Glass Substrates ◽  
Methanol Solutions ◽  
Structural And Electrical Properties ◽  
Dip Coating Technique

ABSTRACTMn-Co-Ni-O thin films of metal atomic ratio 3.0 : 1.9 : 1.0 were prepared on glass substrates from methanol solutions of the corresponding metal β-diketonates by dip-coating. As-prepared films were heated at 900°C for 1 h mostly after being calcined at 450°C for 5 min. The film thickness increased with increasing concentration of the solution as well as the number of lifting times. However, the effect was not apparent with the sample prepared without calcination. The prepared films were observed to crystallize into a complicated spinel phase by the heating process at 900°C for 1 h. The surface of the dense film composed of particles of about 0.2 μm diameter, was almost even. The thermal and aging responses of electric resistance showed the film to be a good material as a thermistor.

Effect of SiO2 Particle Size on Optical Properties of TiO2-SiO2 Nanocomposite Thin Films

2013 ◽  
Vol 684 ◽  
pp. 67-71 ◽  
Author(s):  
Je Hun Kim ◽  
Hyun Goo Choi ◽  
Ting Zhang ◽  
Chul Han Kwon ◽  
Young Ho Kim ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Particle Size ◽  
Uv Light ◽  
Surface Characteristics ◽  
Dip Coating ◽  
Colloidal Solutions ◽  
Nano Composite ◽  
Glass Substrates ◽  
Dip Coating Technique

TiO2-SiO2thin film system is known to be very attractive to use for photocatalytic and display applications. In this study, TiO2-SiO2nano-composite solutions were prepared by adding colloidal solutions consisted of different SiO2nano-particle sizes (7-50 nm) into TiO2powder-dispersed solutions. TiO2-SiO2thin films on glass substrates were fabricated by the dip-coating technique and their crystal structure, surface morphology and photocatalytic properties were investigated as a function of SiO2particle size. While the SiO2particle size had little influence on the crystal structure of thin films, the photocatalytic activity and anti-reflectance (anti-glare) characteristics were found to be dependent on the SiO2particle size. This result could be explained in terms of surface characteristics and the order of degradation of methylene blue under UV light irradiation.

scholarly journals High transparency and conductivity of heavily In-doped ZnO thin films deposited by dip-coating method

2018 ◽  
Vol 36 (3) ◽  
pp. 427-434 ◽  
Author(s):  
S. Benzitouni ◽  
M. Zaabat ◽  
A. Mahdjoub ◽  
A. Benaboud ◽  
B. Boudine
Keyword(s):  
Thin Films ◽  
Visible Region ◽  
Optical Transmittance ◽  
Dip Coating ◽  
Atomic Ratio ◽  
Glass Substrates ◽  
In Doping ◽  
Coating Method ◽  
Diffraction Patterns ◽  
Dip Coating Method

AbstractHeavily In doped zinc oxide (IZO) thin films were deposited on glass substrates by dip-coating method with different concentrations of indium. The effect of heavy In doping on the structural, morphological, optical and electrical properties of ZnO was discussed on the basis of XRD, AFM, UV-Vis spectra and Hall effect measurements. The diffraction patterns of all deposited films were indexed to the ZnO wurtzite structure. However, high In doping damaged the films crystallinity. The highest optical transmittance observed in the visible region (>93 %) exceeded that of ITO: the absolute rival of the most commercial TCOs. The grain size significantly decreased from 140 nm for undoped ZnO to 17.1 nm for IZO with the greatest In ratio. The roughness decreased with increasing In atomic ratio, indicating an improvement in the surface quality. Among all synthesized films, the sample obtained with 11 at.% indium showed the best TCO properties: the highest transmittance (93.5 %) and the lowest resistivity (0.41 Ωcm) with a carrier concentration of 2.4 × 1017 cm−3. These results could be a promising solution for possible photonic and optoelectronic applications.

Refractive Index and Extinction Coefficient of ZnO:Al Thin Films Derived by Sol-Gel Dip Coating Technique

2013 ◽  
Vol 334-335 ◽  
pp. 290-293 ◽  
Author(s):  
N. Baydogan ◽  
T. Ozdurmusoglu ◽  
Huseyin Cimenoglu ◽  
A.B. Tugrul
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Extinction Coefficient ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dip Coating ◽  
Optical Parameters ◽  
Coating Technique ◽  
Glass Substrates ◽  
Dip Coating Technique

Doped ZnO:Al thin films were deposited on glass substrates by the solgel dip technique. Optical parameters such as the refractive index and the extinction coefficient tend to change with increasing annealing temperature.

EFFECT OF ANNEALING TEMPERATURE ON THE OPTICAL AND STRUCTURAL PROPERTIES OF DIP-COATED Al2O3 THIN FILMS PREPARED BY SOL–GEL ROUTE

2005 ◽  
Vol 12 (05n06) ◽  
pp. 793-797 ◽  
Author(s):  
F. E. GHODSI ◽  
M. MAFAKHERI ◽  
A. NOVINROOZ
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Sol Gel Process ◽  
Dip Coating Technique

Thin films of Al 2 O 3 were prepared by the sol–gel process. Dip-coating technique was used for deposition of the Al 2 O 3 thin films onto glass substrates. Optical and structural properties of the films were investigated with respect to the annealing temperature (100–500°C). The structure of these films was determined by X-ray diffraction (XRD). Scanning electron microscopy (SEM) was performed for the analysis of surface morphology. For determination of the optical constants of Al 2 O 3 thin films, UV-Visible spectrophotometry measurements were carried out. Annealing temperature affects the structural and optical properties of the Al 2 O 3 thin films. The refractive index and extinction coefficient of the films at 550 nm wavelength increase from 1.56 to 1.66, and from 3.41 × 10-5 to 5.54 × 10-5, respectively while optical band gap and thickness of the films decrease from 4.15 eV to 4.11 eV, and 360 nm to 260 nm, respectively, by increasing annealing temperature from 100°C to 500°C.

scholarly journals Effects of Sn Dopant on Structural and Optical Properties of ZnO Thin Film Prepared by Sol-Gel Route

2015 ◽  
Vol 773-774 ◽  
pp. 617-621 ◽  
Author(s):  
Mohd Firdaus Malek ◽  
Mohamad Hafiz Mamat ◽  
Nor Diyana Md Sin ◽  
M. Rusop
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Dip Coating ◽  
Zno Thin Film ◽  
Structural And Optical Properties ◽  
Sn Doping ◽  
Glass Substrates ◽  
Tin Chloride ◽  
Sn Dopant ◽  
Dip Coating Technique

Tin doped zinc oxide (Sn:ZnO) thin films were prepared on glass substrates via sol-gel dip-coating technique starting from zinc acetate dehydrate, (CH3CO2)2Zn⋅2H2O and tin chloride, SnCl2. The consequences of various Sn doping on the behavior of the film was investigated. The atomic percentages of dopant in ZnO-based solution were [Sn4+]/[Zn2+] which is between 0% and 4%. The thin films were characterized using Field Emission Scanning Electron Microscope (FESEM) and UV-Vis-NIR spectrophotometer.

PREPARATION AND CHARACTERIZATION OF POLYVINYL ALCOHOL THIN FILMS FOR ORGANIC THIN FILM TRANSISTORS AND BIOMEDICAL APPLICATIONS

2018 ◽  
Vol 5 (2) ◽  
pp. 16-18
Author(s):  
Chandar Shekar B ◽  
Ranjit Kumar R ◽  
Dinesh K.P.B ◽  
Sulana Sundar C ◽  
Sunnitha S ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Gravimetric Method ◽  
Dip Coating ◽  
Organic Thin Film Transistors ◽  
Poly Vinyl Alcohol ◽  
Organic Thin Film ◽  
Glass Substrates ◽  
Coating Method

Thin films of poly vinyl alcohol (PVA) were prepared on pre-cleaned glass substrates by Dip Coating Method. FTIR spectrum was used to identify the functional groups present in the prepared films. The vibrational peaks observed at 1260 cm-1 and 851 cm-1 are assigned to C–C stretching and CH rocking of PVA.The characteristic band appearing at 1432 cm-1 is assigned to C–H bend of CH2 of PVA. The thickness of the prepared thin films were measured by using an electronic thickness measuring instrument (Tesatronic-TTD20) and cross checked by gravimetric method. XRD spectra indicated the amorphous nature of the films.Surface morphology of the coated films was studied by scanning electron microscope (SEM). The surface revealed no pits and pin holes on the surface. The observed surface morphology indicated that these films could be used as dielectric layer in organic thin film transistors and as drug delivery system for wound healing.

Optical, Structural and Electrical Characteristics of Explosively Crystallized Si Thin Films on Glass Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
G. Auvert ◽  
D. Bensahel ◽  
A. Perio ◽  
F. Morin ◽  
G.A. Rozgonyi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Laser Annealing ◽  
The State ◽  
Electrical Characteristics ◽  
Glass Substrates ◽  
Explosive Crystallization ◽  
Cw Laser ◽  
Structural And Electrical Properties ◽  
Si Films

ABSTRACTExplosive Crystallization occurs in cw laser annealing on a-Si films deposited on glass substrates at laser scan speeds higher than 30 cm/sec. Optical, structural and electrical properties of the crystallized films at various laser scan speeds confirm the existence of two kinds of explosive growth depending on the state of crystallinity of the starting material.

Preparation and characterization of V2O5 doped SiO2-TiO2 thin films

2012 ◽  
Vol 2 (1) ◽  
Author(s):  
Marek Nocuń ◽  
Sławomir Kwaśny
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Gel Technique

AbstractIn our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.

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