scholarly journals A Review on the Properties and Applications of WO3 Nanostructure−Based Optical and Electronic Devices

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 2136
Author(s):  
Yu Yao ◽  
Dandan Sang ◽  
Liangrui Zou ◽  
Qinglin Wang ◽  
Cailong Liu
Keyword(s):  
Electrical Properties ◽  
Transition Metal ◽  
Metal Oxides ◽  
Tungsten Oxide ◽  
Transition Metal Oxides ◽  
Electronic Devices ◽  
Information Storage ◽  
High Electron ◽  
Photochromic Properties ◽  
Wide Range

Tungsten oxide (WO3) is a wide band gap semiconductor with unintentionally n−doping performance, excellent conductivity, and high electron hall mobility, which is considered as a candidate material for application in optoelectronics. Several reviews on WO3 and its derivatives for various applications dealing with electrochemical, photoelectrochemical, hybrid photocatalysts, electrochemical energy storage, and gas sensors have appeared recently. Moreover, the nanostructured transition metal oxides have attracted considerable attention in the past decade because of their unique chemical, photochromic, and physical properties leading to numerous other potential applications. Owing to their distinctive photoluminescence (PL), electrochromic and electrical properties, WO3 nanostructure−based optical and electronic devices application have attracted a wide range of research interests. This review mainly focuses on the up−to−date progress in different advanced strategies from fundamental analysis to improve WO3 optoelectric, electrochromic, and photochromic properties in the development of tungsten oxide−based advanced devices for optical and electronic applications including photodetectors, light−emitting diodes (LED), PL properties, electrical properties, and optical information storage. This review on the prior findings of WO3−related optical and electrical devices, as well as concluding remarks and forecasts will help researchers to advance the field of optoelectric applications of nanostructured transition metal oxides.

scholarly journals Electret formation in transition metal oxides by electrochemical amorphization

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Yong-Jin Kim ◽  
Chan-Ho Yang
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Charge Density ◽  
Electric Fields ◽  
Transition Metal Oxides ◽  
Degrees Of Freedom ◽  
Permanent Magnets ◽  
Underlying Mechanism ◽  
Diffusion Reaction ◽  
Wide Range

AbstractTransition metal oxides (TMOs) are an important class of materials that show a wide range of functionalities involving spin, charge, and lattice degrees of freedom. The strong correlation between electrons in d-orbitals and the multivalence nature give rise to a variety of exotic electronic states ranging from insulator to superconductor and cause intriguing phase competition phenomena. Despite a burst of research on the multifarious functionalities in TMOs, little attention has been paid to the formation and integration of an electret—a type of quasi-permanent electric field generator useful for nanoscale functional devices as an electric counterpart to permanent magnets. Here, we find that an electret can be created in LaMnO3 thin films by tip-induced electric fields, with a considerable surface height change, via solid-state electrochemical amorphization. The surface charge density of the formed electret area reaches ~400 nC cm−2 and persists without significant charge reduction for more than a year. The temporal evolution of the surface height, charge density, and electric potential are systematically examined by scanning probe microscopy. The underlying mechanism is theoretically analyzed based on a drift-diffusion-reaction model, suggesting that positively charged particles, which are likely protons produced by the dissociation of water, play crucial roles as trapped charges and a catalysis to trigger amorphization. Our finding opens a new horizon for multifunctional TMOs.

Regulation of Electrical Properties of ZrOxNy by Oxygen Doping and Zirconium Vacancies

2021 ◽  
Author(s):  
Junfei Cai，Sicheng Wu ◽  
Jinjin Li
Keyword(s):  
Electrical Properties ◽  
Transition Metal ◽  
Density Functional ◽  
Electronic Devices ◽  
High Sensitivity ◽  
High Electron ◽  
Oxygen Doping ◽  
Functional Theory ◽  
Formation Energies ◽  
Semiconductor Properties

Transition metal oxynitrides are important materials in electronic devices, electrocatalysis, machinery industry and other fields, according to their excellent properties, such as high sensitivity to temperature and high electron transport characteristics. Especially in sensor and MOS applications, transition metal oxynitrides with semiconductor properties play an important role in the sensitivity and frequency response of sensors. Here, we study the effects of different concentrations of zirconium vacancy (VZr) and oxygen doping on the ZrN structure, and calculate the formation energies and density of states of ZrOxNy in different element ratios by density functional theory. The results show that the introduction of VZr and oxygen doping promote the Fermi level of ZrOxNy to move towards the valence band and conduction band, respectively. The structure of the non-degenerate semiconductor ZrOxNy can be constructed at Zr0.425N0.569O0.006. Taking ZrOxNy as an example, this work proposes a method to regulate the electrical properties of transition metal oxynitrides by introducing zirconium vacancy/oxygen doping, which greatly promotes the rapid discovery of novel transition metal oxynitrides semiconductor materials.

Electro-forming of vacancy-doped metal-SrTiO3-metal structures

2011 ◽  
Vol 1337 ◽  
Author(s):  
Florian Hanzig ◽  
Juliane Seibt ◽  
Hartmut Stoecker ◽  
Barbara Abendroth ◽  
Dirk C. Meyer
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Physical Vapor Deposition ◽  
Oxygen Vacancies ◽  
Vacuum Annealing ◽  
Metal Insulator ◽  
Metal Structures ◽  
Wide Range ◽  
Metal Insulator Metal

ABSTRACTResistance switching in metal – insulator - metal (MIM) structures with transition metal oxides as the insulator material is a promising concept for upcoming non-volatile memories. The electronic properties of transition metal oxides can be tailored in a wide range by doping and external fields. In this study SrTiO3 single crystals are subjected to high temperature vacuum annealing. The vacuum annealing introduces oxygen vacancies, which act as donor centers. MIM stacks are produced by physical vapor deposition of Au and Ti contacts on the front and rear face of the SrTiO3 crystal. The time dependent forming of the MIM stacks under an external voltage is investigated for crystals with varying bulk conductivities. For continued formation, the resistivity increases up to failure of the system where no current can be measured anymore and switching becomes impossible.

scholarly journals John Goodenough and the Many Lives of Transition-Metal Oxides

2022 ◽  
Author(s):  
John M. Tranquada
Keyword(s):  
High Temperature ◽  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Colossal Magnetoresistance ◽  
High Temperature Superconductivity ◽  
Mixed Valence ◽  
Wide Range ◽  
The Many

Abstract In honor of John Goodenough's centennial birthday, I discuss some of his insights into magnetism and the role of mixed valence in transition-metal oxides. His ideas form an important part of the continuing evolution of our understanding of these fascinating materials with a wide range of technologically-important functionalities. In particular, will mention connections to phenomena such as colossal magnetoresistance, enhanced thermopower, and high-temperature superconductivity.

HREM Study of electron-induced surface radiation damage in ReO3

1991 ◽  
Vol 49 ◽  
pp. 636-637
Author(s):  
R. Ai ◽  
H.-J. Fan ◽  
L. D. Marks
Keyword(s):  
Transition Metal ◽  
Metal Ions ◽  
Metal Oxides ◽  
Electron Irradiation ◽  
Transition Metal Oxides ◽  
Carbon Film ◽  
Transition Metal Ions ◽  
Surface Radiation ◽  
Valence Transition ◽  
Electron Microscopes

It has been known for a long time that electron irradiation induces damage in maximal valence transition metal oxides such as TiO2, V2O5, and WO3, of which transition metal ions have an empty d-shell. This type of damage is excited by electronic transition and can be explained by the Knoteck-Feibelman mechanism (K-F mechanism). Although the K-F mechanism predicts that no damage should occur in transition metal oxides of which the transition metal ions have a partially filled d-shell, namely submaximal valence transition metal oxides, our recent study on ReO3 shows that submaximal valence transition metal oxides undergo damage during electron irradiation.ReO3 has a nearly cubic structure and contains a single unit in its cell: a = 3.73 Å, and α = 89°34'. TEM specimens were prepared by depositing dry powders onto a holey carbon film supported on a copper grid. Specimens were examined in Hitachi H-9000 and UHV H-9000 electron microscopes both operated at 300 keV accelerating voltage. The electron beam flux was maintained at about 10 A/cm2 during the observation.

Problems with oxygen analysis in the system MgO-Al2O3-SiO2 with the electron microprobe

1992 ◽  
Vol 50 (2) ◽  
pp. 1624-1625
Author(s):  
Michel Fialin ◽  
Guy Rémond
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Electrostatic Charge ◽  
Carbon Layer ◽  
Sample Holder ◽  
Rock Matrix ◽  
Electrical Discharges ◽  
Thin Carbon ◽  
Beam Instabilities

Oxygen-bearing minerals are generally strong insulators (e.g. silicates), or if not (e.g. transition metal oxides), they are included within a rock matrix which electrically isolates them from the sample holder contacts. In this respect, a thin carbon layer (150 Å in our laboratory) is evaporated on the sections in order to restore the conductivity. For silicates, overestimated oxygen concentrations are usually noted when transition metal oxides are used as standards. These trends corroborate the results of Bastin and Heijligers on MgO, Al2O3 and SiO2. According to our experiments, these errors are independent of the accelerating voltage used (fig.l).Owing to the low density of preexisting defects within the Al2O3 single-crystal, no significant charge buildup occurs under irradiation at low accelerating voltage (< 10keV). As a consequence, neither beam instabilities, due to electrical discharges within the excited volume, nor losses of energy for beam electrons before striking the sample, due to the presence of the electrostatic charge-induced potential, are noted : measurements from both coated and uncoated samples give comparable results which demonstrates that the carbon coating is not the cause of the observed errors.

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