scholarly journals Coulomb Blockade Effect in Well-Arranged 2D Arrays of Palladium Nano-Islands for Hydrogen Detection at Room Temperature: A Modeling Study

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 835
Author(s):  
Mahdi Khaje ◽  
Hassan Sedghi ◽  
Hadi Goudarzi ◽  
Mohammad Taghi Ahmadi ◽  
Seyed Saeid Rahimian Koloor ◽  
...  
Keyword(s):  
Power Consumption ◽  
Threshold Voltage ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Electron Tunneling ◽  
Pd Nanoparticles ◽  
Space Technology ◽  
Hydrogen Detection ◽  
Current Voltage ◽  
Single Electron Tunneling

The fast growth of hydrogen usage as a clean fuel in civil applications such as transportation, space technology, etc. highlights the importance of the reliable detection of its leakage and accumulation under explosion limit by sensors with a low power consumption at times when there is no accumulation of hydrogen in the environment. In this research, a new and efficient mechanism is presented for hydrogen detection—using the Coulomb blockade effect in a well-arranged 2D array of palladium nano-islands—which can operate at room temperature. We demonstrated that under certain conditions of size distribution and the regularity of palladium nano-islands, with selected sizes of 1.7, 3 and 6.1 nm, the blockade threshold will appear in current-voltage (IV) characteristics. In reality, it will be achieved by the inherent uncertainty in the size of the islands in nano-scale fabrication or by controlling the size of nanoparticles from 1.7 to 6.1 nm, considering a regular arrangement of nanoparticles that satisfies single-electron tunneling requirements. Based on the simulation results, the threshold voltage is shifted towards lower ones due to the expansion of Pd nanoparticles exposed to the environment with hydrogen concentrations lower than 2.6%. Also, exploring the features of the presented structure as a gas sensor, provides robustness against the Gaussian variation in nano-islands sizes and temperature variations. Remarkably, the existence of the threshold voltage in the IV curve and adjusting the bias voltage below this threshold leads to a drastic reduction in power consumption. There is also an improvement in the minimum detectable hydrogen concentration as well as the sensor response.

ROOM TEMPERATURE TUNNELING CHARACTERISTICS OF ULTRA-SMALL NORMAL JUNCTIONS

1992 ◽  
Vol 06 (05) ◽  
pp. 273-280 ◽  
Author(s):  
M.D. REEVE ◽  
O.G. SYMKO ◽  
R. LI
Keyword(s):  
Scanning Tunneling Microscope ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Tunnel Junctions ◽  
Electron Tunneling ◽  
Single Electron ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Single Electron Tunneling ◽  
Coulomb Staircase

Tunneling studies between a Scanning Tunneling Microscope (STM)-controlled fine NbN tip and a NbN thin film show single electron tunneling characteristics at room temperature. The I-V curves display the Coulomb blockade and the Coulomb staircase caused by single electron charging of a series combination of two tunnel junctions. These room temperature observations indicate that it may be possible to operate single-electron-based devices in non-cryogenic regimes.

Electrical Properties of Nanoscale Tisi2 Islands on Si

1999 ◽  
Vol 583 ◽  
Author(s):  
Jaehwan Oh ◽  
Hoon Ham ◽  
Peter Laloli ◽  
R. J. Nemanich
Keyword(s):  
Electrical Properties ◽  
High Temperatures ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Electron Tunneling ◽  
Electrical Characteristics ◽  
Single Electron Tunneling ◽  
Coulomb Staircase ◽  
Beam Deposition

AbstractNanoscale TiSi2 islands are formed by electon beam deposition of a few monolayers of titanium followed by in situ annealing at high temperatures (800–1000°C). The typical island sizes were ˜10 nm. Electrical characteristics of these islands were probed using UHV-STM. I-V spectroscopies on these islands show single electron tunneling effects such as Coulomb blockade and Coulomb staircase at room temperature.

ELECTRONICS OF MOLECULAR NANOCLUSTERS

2004 ◽  
Vol 03 (01n02) ◽  
pp. 137-147 ◽  
Author(s):  
V. V. KISLOV ◽  
Yu. V. GULYAEV ◽  
V. V. KOLESOV ◽  
I. V. TARANOV ◽  
S. P. GUBIN ◽  
...  
Keyword(s):  
Electron Tunneling ◽  
Langmuir Monolayers ◽  
Localized States ◽  
Nanocomposite Films ◽  
Molecular Cluster ◽  
Tunnel Current ◽  
Current Voltage ◽  
Single Electron Tunneling ◽  
Solid Substrates ◽  
Bottom To Top

The molecular nanoclusters proved to be very promising objects for applications in electronics not only because they have absolutely identical chemical structure and allow for bottom to top approach in constructing new electronic devices, but also for the possibility to design and create great variety of such clusters with specific properties. The formation and deposition of mixed Langmuir monolayers composed of inert amphiphile molecular matrix and guest ligand-stabilized metal-core nanoclusters are described. This approach allowed to obtain the ordered stable reproducible planar monolayer and multilayer nanocluster nanostructures on solid substrates. The use of novel polymeric Langmuir monolayers formed by amphiphilic polyelectrolytes and nanoclusters resulted in fabrication of ultimately thin monomolecular nanoscale-ordered stable planar polymeric nanocomposite films. The morphology and electron transport in fabricated nanostructures were studied experimentally using AFM and STM. The effects of single electron tunneling at room temperature through molecular cluster object containing finite number of localized states were theoretically investigated taking into account electron–electron Coulomb interaction. It is shown that tunnel current-bias voltage characteristic of such tunnel junction is characterized by a number of staircase steps equal to the number of cluster's eigenlevels, however the fronts of each steps are asymptotically linear with finite inclination. The analytically obtained current–voltage characteristics are in agreement with experimental results for electron tunneling through molecular nanoclusters at room temperatures.

Study of Electrical Properties of Ge-Nanocrystalline Films Deposited by Cluster-Beam Evaporation Technique

1998 ◽  
Vol 536 ◽  
Author(s):  
Souri Banedjee ◽  
H. Ono ◽  
S. Nozaki ◽  
H. Morisaki
Keyword(s):  
Electrical Properties ◽  
Liquid Nitrogen ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Liquid Nitrogen Temperature ◽  
Cluster Beam ◽  
Nanocrystalline Films ◽  
Current Voltage ◽  
Evaporation Technique

AbstractRoom temperature current-voltage (I-V) characteristics were studied across the thickness of the Ge nanocrystalline films, prepared by the cluster beam evaporation technique. The films thus prepared are deposited either at room temperature (Ge-RT) or at liquid nitrogen temperature (Ge-LNT). Ge-LNT nanofilm is subjected to oxidation while Ge-RT did not get oxidized. Steps were observed in the I-V characteristics of the thin Ge- LNT samples suggesting the Coulomb Blockade effect.

Single electron tunneling and manipulation of nanoparticles on surfaces at room temperature

2005 ◽  
Vol 589 (1-3) ◽  
pp. 129-138 ◽  
Author(s):  
Guohua Yang ◽  
Li Tan ◽  
Yiyun Yang ◽  
Shaowei Chen ◽  
Gang-Yu Liu
Keyword(s):  
Room Temperature ◽  
Electron Tunneling ◽  
Single Electron ◽  
Single Electron Tunneling

SINGLE-ELECTRON TUNNELING IN DOUBLE-BARRIER NANOSTRUCTURES

1992 ◽  
Vol 06 (13) ◽  
pp. 2321-2343 ◽  
Author(s):  
V.J. GOLDMAN ◽  
BO SU ◽  
J.E. CUNNINGHAM
Keyword(s):  
Coulomb Blockade ◽  
Resonant Tunneling ◽  
Electron Tunneling ◽  
Tunneling Current ◽  
Theoretical Models ◽  
Single Electron ◽  
Double Barrier ◽  
Current Voltage ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices

We review experimental study of charge transport in nanometer double-barrier resonant tunneling devices. Heterostructure material is asymmetric: one barrier is substantially less transparent than the other. Resonant tunneling through size-quantized well states and single-electron charging of the well are thus largely separated in the two bias polarities. When the emitter barrier is more transparent than the collector barrier, electrons accumulate in the well; incremental electron occupation of the well is accompanied by Coulomb blockade leading to sharp steps of the tunneling current. When the emitter barrier is less transparent, the current reflects resonant tunneling of just one electron at a time through size-quantized well states; the current peaks and/or steps (depending on experimental parameters) appear in current-voltage characteristics. Magnetic field and temperature effects are also reviewed. Good agreement is achieved in comparison of many features of experimental data with simple theoretical models.

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