scholarly journals PbS Nanoparticles Prepared Using 1, 10-Phenanthroline Adduct of Lead(II) Bis(N-alkyl-N-phenyl dithiocarbamate) as Single Source Precursors

Molecules ◽  
2020 ◽  
Vol 25 (9) ◽  
pp. 2097
Author(s):  
Jerry O. Adeyemi ◽  
Damian C. Onwudiwe
Keyword(s):  
Metal Sulfide ◽  
Blue Shift ◽  
Cubic Phase ◽  
Spectroscopic Techniques ◽  
Face Centered Cubic ◽  
Single Source ◽  
Pbs Nanoparticles ◽  
Single Source Precursors ◽  
Diffraction Patterns ◽  
Face Centered

Dithiocarbamate complexes have remained prominent as single source precursors for the synthesis of clean metal sulfide nanoparticles. This study reports the synthesis of lead sulfide (PbS) nanoparticles using some novel complexes of 1, 10-phenanthroline lead(II) bis(N-alkyl-N-phenyl dithiocarbamate), represented as [Pb(L1)2phen] (1) and [Pb(L2)2phen] (2) (where L1 = bis(N-ethyl-N-phenyldithiocarbamate; L2 = bis(N-butyl-N-phenyldithiocarbamate); phen = 1, 10 phenanthroline) as a single source precursors. The complexes (1 and 2) were synthesized and characterized using various spectroscopic techniques and elemental analysis. The nanoparticles were synthesized via a solvothermal approach in oleylamine, used as a capping agent, and were given as PbS(1) and PbS(2) from [Pb(L1)2phen] (1) and [Pb(L2)2phen] (2), respectively, which were characterized using X-ray diffraction (XRD), transmission electron microscopy (TEM), and absorption spectroscopy. The diffraction patterns confirmed the formation of face-centered cubic phase PbS nanoparticles with a preferential growth orientation along the (200) plane. The TEM images showed that PbS(1) were of a spherical morphology, while the morphology of PbS(2) tended to produce short rods. This was due to variation in the functional group on the precursor compounds. This variation also resulted in the different band gap energies found such as 1.148 and 1.107 eV for PbS(1) and PbS(2), respectively, indicating a blue shift from the bulk.

Surface layer properties of ultrasonic impact–treated AA7075 aluminum alloy

2017 ◽  
Vol 232 (12) ◽  
pp. 2218-2225 ◽  
Author(s):  
Fatih Kahraman
Keyword(s):  
Surface Layer ◽  
Aluminum Alloys ◽  
Treatment Time ◽  
Base Material ◽  
Cubic Phase ◽  
Face Centered Cubic ◽  
Deformation Amount ◽  
The Face ◽  
Diffraction Patterns ◽  
Face Centered

In this work, surface layer properties of AA7075 aluminum alloys’ ultrasonic impact peened at different treatment times are investigated. Three different layers were found on the ultrasonic impact–treated surface of AA7075 aluminum alloys. The thicknesses of the layers increase with an increase in the treatment time or deformation amount. X-ray diffraction patterns indicate that the treated surfaces have no different phases from base material and are in the face-centered cubic phase. The highest hardness values of all treated AA7075 aluminum alloys were determined in nanocrystallization layer, which is the top layer of the surface because of the grain refinement and work hardening. A sharp increase at the residual stresses occurs, increasing the deformation time and amount because of the surface enlargement.

scholarly journals Face-Centered Cubic Refractory Alloys Prepared from Single-Source Precursors

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1418
Author(s):  
Kirill V. Yusenko ◽  
Saiana Khandarkhaeva ◽  
Maxim Bykov ◽  
Tymofey Fedotenko ◽  
Michael Hanfland ◽  
...  
Keyword(s):  
Detailed Comparison ◽  
Metallic Phase ◽  
Face Centered Cubic ◽  
Single Source ◽  
Single Source Precursors ◽  
Hydrogen Flow ◽  
Refractory Alloys ◽  
Diamond Anvil ◽  
Face Centered ◽  
Miscibility Gaps

Three binary fcc-structured alloys (fcc–Ir0.50Pt0.50, fcc–Rh0.66Pt0.33 and fcc–Rh0.50Pd0.50) were prepared from [Ir(NH3)5Cl][PtCl6], [Ir(NH3)5Cl][PtBr6], [Rh(NH3)5Cl]2[PtCl6]Cl2 and [Rh(NH3)5Cl][PdCl4]·H2O, respectively, as single-source precursors. All alloys were prepared by thermal decomposition in gaseous hydrogen flow below 800 °C. Fcc–Ir0.50Pt0.50 and fcc–Rh0.50Pd0.50 correspond to miscibility gaps on binary metallic phase diagrams and can be considered as metastable alloys. Detailed comparison of [Ir(NH3)5Cl][PtCl6] and [Ir(NH3)5Cl][PtBr6] crystal structures suggests that two isoformular salts are not isostructural. In [Ir(NH3)5Cl][PtBr6], specific Br…Br interactions are responsible for a crystal structure arrangement. Room temperature compressibility of fcc–Ir0.50Pt0.50, fcc–Rh0.66Pt0.33 and fcc–Rh0.50Pd0.50 has been investigated up to 50 GPa in diamond anvil cells. All investigated fcc-structured binary alloys are stable under compression. Atomic volumes and bulk moduli show good agreement with ideal solutions model. For fcc–Ir0.50Pt0.50, V0/Z = 14.597(6) Å3·atom−1, B0 = 321(6) GPa and B0’ = 6(1); for fcc–Rh0.66Pt0.33, V0/Z = 14.211(3) Å3·atom−1, B0 =259(1) GPa and B0’ = 6.66(9) and for fcc–Rh0.50Pd0.50, V0/Z = 14.18(2) Å3·atom−1, B0 =223(4) GPa and B0’ = 5.0(3).

Electron diffraction detection of ordliking in annealed PbTe thin film

1990 ◽  
Vol 48 (4) ◽  
pp. 1018-1019
Author(s):  
Karimat El-Sayed
Keyword(s):  
Thin Film ◽  
Electron Diffraction ◽  
Lead Telluride ◽  
Structural Basis ◽  
Face Centered Cubic ◽  
X Ray ◽  
Polycrystalline Thin Films ◽  
Stage Process ◽  
Diffraction Patterns ◽  
Face Centered

Lead telluride is an important semiconductor of many applications. Many Investigators showed that there are anamolous descripancies in most of the electrophysical properties of PbTe polycrystalline thin films on annealing. X-Ray and electron diffraction studies are being undertaken in the present work in order to explain the cause of this anamolous behaviour.Figures 1-3 show the electron diffraction of the unheated, heated in air at 100°C and heated in air at 250°C respectively of a 300°A polycrystalline PbTe thin film. It can be seen that Fig. 1 is a typical [100] projection of a face centered cubic with unmixed (hkl) indices. Fig. 2 shows the appearance of faint superlattice reflections having mixed (hkl) indices. Fig. 3 shows the disappearance of thf superlattice reflections and the appearance of polycrystalline PbO phase superimposed on the [l00] PbTe diffraction patterns. The mechanism of this three stage process can be explained on structural basis as follows :

Stacking Faults in a High Nitrogen Face-Centered-Cubic Phase Formed on Nitrogen-Modified Austenitic Stainless Steel

2008 ◽  
Vol 373-374 ◽  
pp. 318-321
Author(s):  
J. Liang ◽  
M.K. Lei
Keyword(s):  
Stainless Steel ◽  
Plasma Source ◽  
Peak Shift ◽  
Cubic Phase ◽  
Face Centered Cubic ◽  
X Ray Diffraction ◽  
High Nitrogen ◽  
X Ray ◽  
Peak Asymmetry ◽  
Face Centered

Effects of stacking faults in a high nitrogen face-centered-cubic phase (γΝ) formed on plasma source ion nitrided 1Cr18Ni9Ti (18-8 type) austenitic stainless steel on peak shift and peak asymmetry of x-ray diffraction were investigated based on Warren’s theory and Wagner’s method, respectively. The peak shift from peak position of the γΝ phase is ascribed to the deformation faults density α, while the peak asymmetry of the γΝ phase is characterized by deviation of the center of gravity of a peak from the peak maximum (Δ C.G.) due to the twin faults density β. The calculated peak positions of x-ray diffraction patterns are consistent with that measured for plasma source ion nitrided 1Cr18Ni9Ti stainless steel.

Group III Metal Sulfide Thin Films From Single-Source Precursors by Chemical Vapor Deposition (CVD) Techniques

1999 ◽  
Vol 606 ◽  
Author(s):  
Mike R. Lazell ◽  
Paul O'brien ◽  
David J. Otway ◽  
Jin-Ho Park
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Metal Sulfide ◽  
Chemical Vapor ◽  
Single Source ◽  
Group 13 ◽  
Single Source Precursors ◽  
Group Iii

AbstractSeveral single-source precursors including In(SOCNiBu2)3, In(S2CNMeHex)3 and Ga(S2CNMeR)3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α and β-In2S3thin films on borosilicate glass and oc-Ga 2S3thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semicondcuting materials have been characterized by XRD, SEM, XPS and EDAX.

Thermal Stability and Failure Mechanisms of Au/Tiw(N)/Si and Au/TiW(N)/Si02/Si Systems

1996 ◽  
Vol 427 ◽  
Author(s):  
C. R. Chen ◽  
L. J. Chen
Keyword(s):  
Thermal Stability ◽  
Failure Mechanisms ◽  
Cubic Phase ◽  
Face Centered Cubic ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Single Face ◽  
Face Centered ◽  
The Stability ◽  
Ar Gas

AbstractThermal stability and failure mechanisms of Au/TiW(N)/Si and Au/TiW(N)/SiO2/Si systems have been studied by both conventional and high-resolution transmission electron microscopy, X- ray diffraction and Auger electron spectroscopy. For films deposited in Ar gas containing 20% N2, a single face-centered-cubic phase was the only crystalline phase detected to form. The samples were found to remain stable after annealing at 700 °C for 30 min. The stability temperature for Au/TiW(N)(Ar:N2=80:20)/SiO2/Si samples was found to be higher than those of Au/TiW(N) (Ar:N2=90:10)/SiO2/Si and Au/TiW/SiO2/Si samples.

Metal complexes of thiobiurets and dithiobiurets: Novel single source precursors for metal sulfide thin film nanostructures

2010 ◽  
Vol 39 (6) ◽  
pp. 1460-1463 ◽  
Author(s):  
Karthik Ramasamy ◽  
Mohammad A. Malik ◽  
Paul O'Brien ◽  
James Raftery
Keyword(s):  
Thin Film ◽  
Metal Complexes ◽  
Metal Sulfide ◽  
Single Source ◽  
Single Source Precursors ◽  
Thin Film Nanostructures
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