scholarly journals 3D Numerical Simulation of a Z Gate Layout MOSFET for Radiation Tolerance

Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 659 ◽  
Author(s):  
Ying Wang ◽  
Chan Shan ◽  
Wei Piao ◽  
Xing-ji Li ◽  
Jian-qun Yang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Threshold Voltage ◽  
Computer Aided Design ◽  
Oxide Semiconductor ◽  
Radiation Tolerance ◽  
Threshold Voltage Shift ◽  
Radiation Hardened ◽  
Small Footprint ◽  
Aided Design ◽  
First Time

In this paper, for the first time, an n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET) layout with a Z gate and an improved total ionizing dose (TID) tolerance is proposed. The novel layout can be radiation-hardened with a fixed charge density at the shallow trench isolation (STI) of 3.5 × 1012 cm−2. Moreover, it has the advantages of a small footprint, no limitation in W/L design, and a small gate capacitance compared with the enclosed gate layout. Beside the Z gate layout, a non-radiation-hardened single gate layout and a radiation-hardened enclosed gate layout are simulated using the Sentaurus 3D technology computer-aided design (TCAD) software. First, the transfer characteristics curves (Id-Vg) curves of the three layouts are compared to verify the radiation tolerance characteristic of the Z gate layout; then, the threshold voltage and the leakage current of the three layouts are extracted to compare their TID responses. Lastly, the threshold voltage shift and the leakage current increment at different radiation doses for the three layouts are presented and analyzed.

Analysis of Channel Area Fluctuation Effects of Gate-All-Around Tunnel Field-Effect Transistor

2020 ◽  
Vol 20 (7) ◽  
pp. 4409-4413
Author(s):  
Seok Jung Kang ◽  
Jeong-Uk Park ◽  
Kyung Jin Rim ◽  
Yoon Kim ◽  
Jang Hyun Kim ◽  
...  
Keyword(s):  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Oxide Semiconductor ◽  
Fluctuation Effects ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Tcad Simulation ◽  
Aided Design ◽  
First Time

In this manuscript, channel area fluctuation (CAF) effects on turn-on voltage (Von) and subthreshold swing (SS) in gate-all-around (GAA) nanowire (NW) tunnel field-effect transistor (TFET) with multi-bridge-channel (MBC) have been investigated for the first time. These variations occur because oblique etching slope makes various elliptical-shaped channels in MBC-TFET. Since TFET is promising candidates to succeed metal-oxide-semiconductor FETs (MOSFET), these variation effects have been compared to MOSFET. Furthermore, Ge homojunction TFET, one of the solutions to increase on-state current in TFET and improve SS also has been simulated using technology computer-aided design (TCAD) simulation. The results would be worth reference for future study about GAA NW TFETs.

scholarly journals The gamma-ray irradiation sensitivity and dosimetric information instability of RADFET dosimeter

2013 ◽  
Vol 28 (4) ◽  
pp. 415-421 ◽  
Author(s):  
Milic Pejovic
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Room Temperature ◽  
Gamma Ray ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Gamma Ray Irradiation

The gamma-ray irradiation sensitivity to radiation dose range from 0.5 Gy to 5 Gy and post-irradiation annealing at room and elevated temperatures have been studied for p-channel metal-oxide-semiconductor field effect transistors (also known as radiation sensitive field effect transistors or pMOS dosimeters) with gate oxide thicknesses of 400 nm and 1 mm. The gate biases during the irradiation were 0 and 5 V and 5 V during the annealing. The radiation and the post-irradiation sensitivity were followed by measuring the threshold voltage shift, which was determined by using transfer characteristics in saturation and reader circuit characteristics. The dependence of threshold voltage shift DVT on absorbed radiation dose D and annealing time was assessed. The results show that there is a linear dependence between DVT and D during irradiation, so that the sensitivity can be defined as DVT/D for the investigated dose interval. The annealing of irradiated metal-oxide-semiconductor field effect transistors at different temperatures ranging from room temperature up to 150?C was performed to monitor the dosimetric information loss. The results indicated that the dosimeters information is saved up to 600 hours at room temperature, whereas the annealing at 150?C leads to the complete loss of dosimetric information in the same period of time. The mechanisms responsible for the threshold voltage shift during the irradiation and the later annealing have been discussed also.

scholarly journals Ground Plane Impact on Performance of Relaxed Ge FinFETs

2019 ◽  
Vol 14 (1) ◽  
pp. 1-6
Author(s):  
Alberto Vinícius Oliveira ◽  
Guilherme Vieira Gonçalves ◽  
Paula Ghedini Der Agopian ◽  
João Antonio Martino ◽  
Jérôme Mitard ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Computer Aided Design ◽  
Doping Concentration ◽  
Ground Plane ◽  
Subthreshold Swing ◽  
Voltage Variation ◽  
Electrostatic Coupling ◽  
P Type ◽  
Aided Design ◽  
Channel Region

The implementation of a barrier potential layer underneath the channel region, well known as Ground Plane (GP) implantation, and its influence on the performance of relaxed germanium pFinFET devices is investigated in this manuscript. This study aims to explain the fin width dependence of the threshold voltage from experimental data and evaluates the ground plane doping concentration and its depth influence on relaxed p-type channel germanium FinFET parameters, as threshold voltage, transconductance and subthreshold swing, through Technology Computer-Aided Design (TCAD) numerical simulations. The threshold voltage variation reaches up to 80 mV from the narrowest device to the widest one, considering the studied range of ground plane doping concentration. Concerning the subthreshold swing parameter, neither the GP doping concentration, nor its depth play a significant role since the electrostatic coupling is predominant.

scholarly journals A New Split Gate Resurf Stepped Oxide UMOSFET Structure with High Doped Epitaxial Layer for Improving Figure of Merit (FOM)

2020 ◽  
Vol 10 (21) ◽  
pp. 7895
Author(s):  
Runze Chen ◽  
Lixin Wang ◽  
Hongkai Zhang ◽  
Mengyao Cui ◽  
Min Guo
Keyword(s):  
Electric Field ◽  
Epitaxial Layer ◽  
Computer Aided Design ◽  
Figure Of Merit ◽  
Cost Effective ◽  
Oxide Semiconductor ◽  
Fabrication Procedure ◽  
Conventional Structure ◽  
Aided Design ◽  
Reduced Surface

The split gate resurf stepped oxide with highly doped epitaxial layer (HDSGRSO) UMOSFET has been proposed. The epitaxial layer of HDSGRSO u-shape metal oxide semiconductor field effect transistor (UMOSFET) has been divided into three parts: the upper epitaxial layer, the lower epitaxial layer and the middle epitaxial layer with higher doping concentration. The research shows that the reduced SURface field (RESURF) active has been enhanced due to the high doped epitaxial layer, which can modulate the electric field distribution and reduce the internal high electric field. Therefore, the HDGRSO UMOSFET has a higher breakdown voltage (BV), a lower on-state specific resistance (RSP) and a better figure of merit (FOM). According to the results of Technology Computer Aided Design (TCAD) simulations, the FOM (BV2/RSP) of HDSGRSO UMOSFET has been improved by 464%, and FOM (RSP × Qgd) of HDSGRSO UMOSFET has been reduced by 27.9% compared to the conventional structure, respectively, when the BV is 240 V. Furthermore, there is no extra special process required in this advanced fabrication procedure, which is relatively cost-effective and achievable.

scholarly journals Digital design and parameters optimization for plasmonic circuits

2019 ◽  
Vol 220 ◽  
pp. 03025
Author(s):  
Alexander Shesterikov ◽  
Andrey Leksin ◽  
Alexei Prokhorov
Keyword(s):  
Quantum Dots ◽  
Computer Aided Design ◽  
Surface Plasmon Polariton ◽  
Parameters Optimization ◽  
Digital Design ◽  
Plasmonic Waveguides ◽  
Full Field ◽  
Graphene Layers ◽  
Aided Design ◽  
First Time

The mathematical models for the CAD-platform of plasmonic circuits design have been developed. This platform provides the efficient framework for computer-aided design of semiconductor quantum dots and full-field electromagnetic simulation of surface plasmon-polariton propagation in plasmonic waveguides. The topology of an all-plasmonic devices based on graphene layers and quantum dots is proposed for the first time.

scholarly journals Exacting Standards

2000 ◽  
Vol 122 (12) ◽  
pp. 71-72
Keyword(s):  
North Carolina ◽  
Computer Aided Design ◽  
Point Cloud ◽  
Cloud Data ◽  
Design Concepts ◽  
Research Triangle ◽  
Aided Design ◽  
First Time ◽  
Model Digitizing ◽  
Polygonal Model

This article discusses integration of handcrafted parts into computer-aided design (CAD)-designed bikes. The digital duplication process started when Harley Davidson sent Schaefer an assembly-ready Dyna Wide gas tank. It took two days of work to prepare the tank and scan it with an ATOS white-light 3D scanner, made by GOM mbH (for Gesellschaft fur Optische Messtechnik) in Braunschweig, Germany. Using Geomagic Studio, the software from Raindrop Geomagic, Advanced Design Concepts first converted the point cloud to a polygonal model. The 3D point cloud data were brought into Geomagic Studio, software from Raindrop Geomagic of Research Triangle Park, North Carolina. Using Geomagic, ADC first converted the point cloud to a polygonal model. The next step of processing created a non-uniform rational b–spline (NURBS) model. Digitizing the Dyna Wide gas tank represented the first time that Advanced Design Concepts had used Geomagic Studio on a Harley-Davidson job. According to an expert, the company now has three people devoted to working with the program.

scholarly journals Analysis of Engineering Accreditation Process and Outcomes: Lessons Learned for Successful First Time Application

2020 ◽  
Vol 19 (9) ◽  
pp. 281-300
Author(s):  
Tahar Ayadat ◽  
Andi Asiz
Keyword(s):  
Computer Aided Design ◽  
The United States ◽  
Accreditation Process ◽  
Lessons Learned ◽  
Engineering Programs ◽  
Engineering Program ◽  
Senior Design ◽  
Program Compliance ◽  
Aided Design ◽  
First Time

The aims of the paper are to share and analyze engineering accreditation experience starting from the preparation through the outcome, and to discuss lessons learned particularly for first-time applicants. Securing accreditation from a well-recognized international body, such as the Accreditation Board for Engineering and Technology (ABET) can indicate quality of an engineering program. To qualify for an accreditation up to six- to seven-year period, an engineering program must meet a set of accreditation standards or criteria. The article is not limited only for new engineering programs outside the United States who are willing to pursue engineering accreditation from ABET, but it is applicable for an existing accredited program who will undergo next accreditation cycle. The authors presented and analyzed detail accreditation experience for a new established Civil Engineering (CE) Program at Prince Mohammad bin Fahd University (PMU) in Saudi Arabia. Although the ABET website provides detail procedure for the accreditation steps, the detail cases experienced by the PMU CE program will enrich knowledge on how to prepare and handle successful international accreditation. The authors also discussed issues raised during the accreditation activities, including program compliance with the nine ABET criteria, and presented key lessons to prepare for a smooth accreditation process. The main significant result of the accreditation exercise about continuous improvement was summarized in term of the curriculum upgrade, including adding another semester for senior design course and offering new sustainability engineering course, and adding computer aided design course at the early semester.

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