scholarly journals Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices

Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 658 ◽  
Author(s):  
Huolin Huang ◽  
Feiyu Li ◽  
Zhonghao Sun ◽  
Yaqing Cao
Keyword(s):  
High Temperature ◽  
Analytical Model ◽  
Threshold Voltage ◽  
Computer Aided Design ◽  
Wide Bandgap ◽  
Physical Parameters ◽  
High Electron ◽  
Power Devices ◽  
Operation Condition ◽  
High Temperature Operation

Temperature-dependent threshold voltage (Vth) stability is a significant issue in the practical application of semi-conductor power devices, especially when they are undergoing a repeated high-temperature operation condition. The Vth analytical model and its stability are dependent on high-temperature operations in wide-bandgap gallium nitride (GaN)-based high electron mobility transistor (HEMT) devices that were investigated in this work. The temperature effects on the physical parameters—such as barrier height, conduction band, and polarization charge—were analysed to understand the mechanism of Vth stability. The Vth analytical model under high-temperature operation was then proposed and developed to study the measurement temperatures and repeated rounds dependent on Vth stability. The validity of the model was verified by comparing the theoretical calculation data with the experimental measurement and technology computer-aided design (TCAD) simulation results. This work provides an effective theoretical reference on the Vth stability of power devices in practical, high-temperature applications.

1700V, 5.5mOhm-cm2 4H-SiC DMOSFET with Stable 225°C Operation

2014 ◽  
Vol 778-780 ◽  
pp. 903-906 ◽  
Author(s):  
Kevin Matocha ◽  
Kiran Chatty ◽  
Sujit Banerjee ◽  
Larry B. Rowland
Keyword(s):  
High Temperature ◽  
Temperature Stress ◽  
High Temperatures ◽  
Threshold Voltage ◽  
Room Temperature ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Device Reliability ◽  
Bias Temperature Stress ◽  
High Temperature Operation

We report a 1700V, 5.5mΩ-cm24H-SiC DMOSFET capable of 225°C operation. The specific on-resistance of the DMOSFET designed for 1200V applications is 8.8mΩ-cm2at 225°C, an increase of only 60% compared to the room temperature value. The low specific on-resistance at high temperatures enables a smaller die size for high temperature operation. Under a negative gate bias temperature stress (BTS) at VGS=-15 V at 225°C for 20 minutes, the devices show a threshold voltage shift of ΔVTH=-0.25 V demonstrating one of the key device reliability requirements for high temperature operation.

The Dependence of Carrier Distribution on Gate Capacitance of α-IGZO TFTs

2014 ◽  
Vol 598 ◽  
pp. 361-364 ◽  
Author(s):  
Chih Chieh Hsu ◽  
Chien Hsun Wu
Keyword(s):  
Threshold Voltage ◽  
Computer Aided Design ◽  
Gate Dielectric ◽  
Oxide Thin Film ◽  
High Electron ◽  
Indium Gallium Zinc Oxide ◽  
Gate Bias ◽  
Carrier Distribution ◽  
Fully Depleted ◽  
Gate Capacitance

The capacitance-voltage (C–V) characteristics of inverted staggered amorphous indium–gallium–zinc-oxide thin film transistors (α-IGZO TFTs) with various dimensions are investigated by physics-based technology computer aided design (TCAD) simulation. For gate bias lower than the threshold voltage of the TFT, the electrons in the channel region are nearly fully depleted. It causes that the total gate capacitance is determined by the overlap region of gate, α-IGZO, and source/drain metals. When the applied gate bias is higher than the threshold voltage, the high electron density channel with density of ~6 × 1017 cm-3 and thickness of ~3-4 nm is observed near the interface of α-IGZO and gate dielectric. It results that the total gate capacitance is dominated by the gate to channel overlap. Quantitative analysis of the carrier distribution and energy band structures are utilized to study the physical mechanism underlying the C–V characteristics of the α-IGZO TFTs.

An Analytical Model for Field-Plate Optimization in High Electron Mobility Transistor

2012 ◽  
Vol 529 ◽  
pp. 33-36
Author(s):  
Qian Luo ◽  
Jiang Feng Du ◽  
Xiang Wang ◽  
Ning Ning ◽  
Yang Liu ◽  
...  
Keyword(s):  
Analytical Model ◽  
Electron Mobility ◽  
Potential Distribution ◽  
High Electron Mobility Transistor ◽  
Critical Parameters ◽  
Physical Parameters ◽  
High Electron ◽  
High Electron Mobility ◽  
Field Plate ◽  
Gan Hemt

An analytical model for field-plate (FP) optimization in high electron mobility transistor (HEMT) is reported. With the potential distribution in device’s channel being modeled in terms of physical parameters, the two critical parameters of FP, i.e., the insulator thickness and the FP length, are optimized respectively. Using the model, the optimization of the FP structure in a typical undoped AlGaN/GaN HEMT is described in detail.

scholarly journals High Temperature Operation of Al0.45Ga0.55N/Al0.30Ga0.70N High Electron Mobility Transistors

2017 ◽  
Vol 6 (11) ◽  
pp. S3010-S3013 ◽  
Author(s):  
Albert G. Baca ◽  
Andrew M. Armstrong ◽  
Andrew A. Allerman ◽  
Brianna A. Klein ◽  
Erica A. Douglas ◽  
...  
Keyword(s):  
High Temperature ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
High Temperature Operation

High-Temperature Operation of SiC Power Devices by Low-Temperature Sintered Silver Die-Attachment

2007 ◽  
Vol 30 (3) ◽  
pp. 506-510 ◽  
Author(s):  
John Guofeng Bai ◽  
Jian Yin ◽  
Zhiye Zhang ◽  
Guo-Quan Lu ◽  
Jacobus Daniel van Wyk
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Power Devices ◽  
Die Attachment ◽  
High Temperature Operation ◽  
Sintered Silver

scholarly journals Modeling of gallium nitride transistors for high power and high temperature applications

2020 ◽  
Author(s):  
◽  
Samira Shamsir
Keyword(s):  
High Temperature ◽  
Analytical Model ◽  
High Power ◽  
Research Work ◽  
Device Simulation ◽  
Device Modeling ◽  
Power Devices ◽  
Power Transistors ◽  
Spice Model ◽  
Temperature Applications

Wide bandgap (WBG) semiconductors such as GaN and SiC are emerging as promising alternatives to Si for new generation of high efficiency power devices. GaN has attracted a lot of attention recently because of its superior material properties leading to potential realization of power transistors for high power, high frequency, and high temperature applications. In order to utilize the full potential of GaN-based power transistors, proper device modeling is essential to verify its operation and improve the design efficiency. In this view, this research work presents modeling and characterization of GaN transistors for high power and high temperature applications. The objective of this research work includes three key areas of GaN device modeling such as physics-based analytical modeling, device simulation with numerical simulator and electrothermal SPICE model for circuit simulation. The analytical model presented in this dissertation enables understanding of the fundamental physics of this newly emerged GaN device technology to improve the operation of existing device structures and to optimize the device configuration in the future. The numerical device simulation allows to verify the analytical model and study the impact of different device parameters. An empirical SPICE model for standard circuit simulator has been developed and presented in the dissertation which allows simulation of power electronic circuits employing GaN power devices. The empirical model provides a good approximation of the device behavior and creates a link between the physics-based analytical model and the actual device testing data. Furthermore, it includes an electrothermal model which can predict the device behavior at elevated temperatures as required for high temperature applications.

Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications

2009 ◽  
Vol 615-617 ◽  
pp. 715-718 ◽  
Author(s):  
Andrew Ritenour ◽  
Volodymyr Bondarenko ◽  
Robin L. Kelley ◽  
David C. Sheridan
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Threshold Voltage ◽  
Room Temperature ◽  
Electrical Characterization ◽  
Saturation Current ◽  
Large Area ◽  
Enhancement Mode ◽  
High Temperature Operation

Prototype 800 V, 47 A enhancement-mode SiC VJFETs have been developed for high temperature operation (250 °C). With an active area of 23 mm2 and target threshold voltage of +1.25 V, these devices exhibited a 28 m room temperature on-resistance and excellent blocking characteristics at elevated temperature. With improved device packaging, on-resistance and saturation current values of 15 m and 100 A, respectively, are achievable.

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

2011 ◽  
Vol 324 ◽  
pp. 46-51 ◽  
Author(s):  
Dominique Tournier ◽  
Pierre Brosselard ◽  
Christophe Raynaud ◽  
Mihai Lazar ◽  
Herve Morel ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
High Power ◽  
Schottky Diodes ◽  
Wide Bandgap ◽  
Power Devices ◽  
Wide Bandgap Materials ◽  
Bandgap Semiconductors ◽  
Bandgap Materials ◽  
Temperature Applications

Progress in semiconductor technologies have been so consequent these last years that theoretical limits of silicon, speci cally in the eld of high power, high voltage and high temperature have been achieved. At the same time, research on other semiconductors, and es- pecially wide bandgap semiconductors have allowed to fabricate various power devices reliable and performant enough to design high eciency level converters in order to match applications requirements. Among these wide bandgap materials, SiC is the most advanced from a techno- logical point of view: Schottky diodes are already commercially available since 2001, JFET and MOSFET will be versy soon. SiC-based switches Inverter eciency bene ts have been quite established. Considering GaN alternative technology, its driving force was mostly blue led for optical drive or lighting. Although the GaN developments mainly focused for the last decade on optoelectronics and radio frequency, their properties were recently explored to design devices suitable for high power and high eciency applications. As inferred from various studies, due to their superior material properties, diamond and GaN should be even better than SiC, silicon (or SOI) being already closed to its theoretical limits. Even if the diamond maturity is still far away from GaN and SiC, laboratory results are encouraging speci cally for very high voltage devices. Apart from packaging considerations, SiC, GaN and Diamond o ers a great margin of progress. The new power devices o er high voltage and low on-resistance that enable important reduction in energy consumption in nal applications. Applications for wide bandgap materials are the direction of high voltage but also high temperature. As for silicon technology, WBG-ICs are under development to take full bene ts of power and drive integration for high temperature applications.

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