scholarly journals Electromagnetically Induced Transparency (EIT) Like Transmission Based on 3 × 3 Cascaded Multimode Interference Resonators

Micromachines ◽  
2018 ◽  
Vol 9 (8) ◽  
pp. 417 ◽  
Author(s):  
Trung-Thanh Le
Keyword(s):  
Electromagnetically Induced Transparency ◽  
Complementary Metal Oxide Semiconductor ◽  
Microring Resonator ◽  
Oxide Semiconductor ◽  
Design Parameters ◽  
Multimode Interference ◽  
Silicon Waveguide ◽  
Resonance Unit ◽  
Theoretical And Numerical Analysis ◽  
Induced Transparency

We propose a method for generating the electromagnetically induced transparency (EIT) like-transmission by using microring resonator based on cascaded 3 × 3 multimode interference (MMI) structures. Based on the Fano resonance unit created from a 3 × 3 MMI coupler with a feedback waveguide, two schemes of two coupled Fano resonator unit (FRU) are investigated to generate the EIT like transmission. The theoretical and numerical analysis based on the coupled mode theory and transfer matrix is used for the designs. Our proposed structure has advantages of compactness and ease of fabrication. We use silicon waveguide for the design of the whole device so it is compatible with the existing Complementary Metal-Oxide-Semiconductor (CMOS) circuitry foundry. The fabrication tolerance and design parameters are also investigated in this study.

Ethanol Sensor Based on Microring Resonator

2013 ◽  
Vol 655-657 ◽  
pp. 669-672
Author(s):  
Yao Chen ◽  
Yu Li Ding ◽  
Zheng Yu Li
Keyword(s):  
Chemical Sensors ◽  
Environmental Control ◽  
Low Cost ◽  
Virus Detection ◽  
Complementary Metal Oxide Semiconductor ◽  
Medical Diagnostics ◽  
Ethanol Solution ◽  
Microring Resonator ◽  
Oxide Semiconductor ◽  
Detection Mechanism

Chemical sensors is gaining long-standing interests due to their applications in many areas such as bacterial and virus detection, medical diagnostics, drug development, food safety and environmental control. Among the existing chemical sensors, optical planar sensors show promising and attempt to beat their commercialized competitors because of their robustness, lable-free detection mechanism, mature complementary metal oxide semiconductor (coms) fabrication technology and naturally low cost. Silicon nitride microring resonators were demonstrated as chemical sensors. Using the technique of coms technology, the microring devices were fabricated with 200 µm in radius. Performance of the devices was measured, which showed the quality factor (q) was up to 25,000. Sensitivity of 108.9336 nm per reflective index unit (nm/riu) and detection limit of 1.836×10-4 riu were demonstrated by using various concentrations of ethanol solution as analytes.

scholarly journals Characteristics of Highly Sensitive Hydrogen Sensor Based on Pt-WO3/Si Microring Resonator

Sensors ◽  
2019 ◽  
Vol 20 (1) ◽  
pp. 96 ◽  
Author(s):  
Sosuke Matsuura ◽  
Naoki Yamasaku ◽  
Yoshiaki Nishijima ◽  
Shinji Okazaki ◽  
Taro Arakawa
Keyword(s):  
Sol Gel ◽  
Tungsten Bronze ◽  
Complementary Metal Oxide Semiconductor ◽  
Hydrogen Sensor ◽  
Hydrogen Gas ◽  
Microring Resonator ◽  
Oxide Semiconductor ◽  
Gas Sensitivity ◽  
Highly Sensitive ◽  
New Energy

Hydrogen gas has attracted attention as a new energy carrier, and simple but highly sensitive hydrogen sensors are required. We fabricated an optical hydrogen sensor based on a silicon microring resonator (MRR) with tungsten oxide (WO3) using a complementary metal-oxide-semiconductor (CMOS)-compatible process for the MRR and a sol-gel method for the WO3 layer and investigated its sensing characteristics at device temperatures of 5, 20, and 30 °C. At each temperature, a hydrogen concentration of as low as 0.1 vol% was successfully detected. The gas sensitivity increased with decreasing temperature. The dependence of the sensitivity on the device temperature can be attributed to the thickness of tungsten bronze (HxWO3) formed by WO3 during exposure to hydrogen gas. In addition, a hydrogen gas sensor based on a silicon-MRR-enhanced Mach–Zehnder interferometer (MRR-MZI) is proposed and its significantly high sensing ability using improved changes in the transmittance of light is theoretically discussed.

scholarly journals A compact structure for realizing Lorentzian, Fano, and electromagnetically induced transparency resonance lineshapes in a microring resonator

Nanophotonics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 841-848 ◽  
Author(s):  
Linpeng Gu ◽  
Hanlin Fang ◽  
Juntao Li ◽  
Liang Fang ◽  
Soo Jin Chua ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Electromagnetically Induced Transparency ◽  
Free Spectral Range ◽  
Microring Resonator ◽  
Quality Factors ◽  
Compact Structure ◽  
Fundamental Building Block ◽  
Resonant Modes ◽  
Fabry Perot ◽  
Induced Transparency

AbstractMicroring resonators, as a fundamental building block of photonic integrated circuits, are well developed into numerous functional devices, whose performances are strongly determined by microring’s resonance lineshapes. We propose a compact structure to reliably realize Lorentzian, Fano, and electromagnetically induced transparency (EIT) resonance lineshapes in a microring. By simply inserting two air-holes in the side-coupled waveguide of a microring, a Fabry-Perot (FP) resonance is involved to couple with microring’s resonant modes, showing Lorentzian, Fano, and EIT lineshapes over one free spectral range of the FP resonance. The quality factors, extinction ratios (ERs), and slope rates (SRs) in different lineshapes are discussed. At microring’s specific resonant wavelength, the lineshape could be tuned among these three types by controlling the FP cavity’s length. Experiment results verify the theoretical analysis well and represent Fano lineshapes with ERs of about 20 dB and SRs over 280 dB/nm. The reliably and flexibly tunable lineshapes in the compact structure have potentials to improve microring-based devices and expand their application scopes.

Design of a Low Noise Active Pixel Sensor using Complementary Metal-Oxide-Semiconductor Technology

2016 ◽  
Vol 4 (2) ◽  
pp. 130-136
Author(s):  
N.P. Maity ◽  
◽  
Reshmi Maity ◽  
Srimanta Baishya ◽  
◽  
...  
Keyword(s):  
Metal Oxide ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Image Sensor ◽  
Low Noise ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Design Parameters ◽  
Active Pixel Sensor ◽  
Active Pixel

In this paper, our focus is on designing of complementary metal-oxide-semiconductor (CMOS) photodiode based active pixel sensor (APS) and performance analysis and achievements for CMOS image sensor. Different important design parameters like photocurrent, conversion gain, conversion factor, dynamic range, readout speed, and quantum efficiency have been calculated. Noise is also considered for the design at different phase of operations of CMOS APS. Various design parameters of our design are computed and compared with simulated results. Noise calculation shows that the pixel noise is dominated by reset noise.

Towards the Design of Cost-efficient Generic Register Using Quantum-dot Cellular Automata

2020 ◽  
Vol 10 (4) ◽  
pp. 534-547
Author(s):  
Chiradeep Mukherjee ◽  
Saradindu Panda ◽  
Asish K. Mukhopadhyay ◽  
Bansibadan Maji
Keyword(s):  
Cellular Automata ◽  
Quantum Dot ◽  
Power Dissipation ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Digital Data ◽  
Design Parameters ◽  
Flip Flop ◽  
Quantum Dot Cellular Automata ◽  
Cost Efficient

Background: The advancement of VLSI in the application of emerging nanotechnology explores quantum-dot cellular automata (QCA) which has got wide acceptance owing to its ultra-high operating speed, extremely low power dissipation with a considerable reduction in feature size. The QCA architectures are emerging as a potential alternative to the conventional complementary metal oxide semiconductor (CMOS) technology. Experimental: Since the register unit has a crucial role in digital data transfer between the electronic devices, such study leading to the design of cost-efficient and highly reliable QCA register is expected to be a prudent area of research. A thorough survey on the existing literature shows that the generic models of Serial-in Serial Out (SISO), Serial-in-Parallel-Out (SIPO), Parallel-In- Serial-Out (PISO) and Parallel-in-Parallel-Out (PIPO) registers are inadequate in terms of design parameters like effective area, delay, O-Cost, Costα, etc. Results: This work introduces a layered T gate for the design of the D flip flop (LTD unit), which can be broadly used in SISO, SIPO, PISO, and PIPO register designs. For detection and reporting of high susceptible errors and defects at the nanoscale, the reliability and defect tolerant analysis of LTD unit are also carried out in this work. The QCA design metrics for the general register layouts using LTD unit is modeled. Conclusion: Moreover, the cost metrics for the proposed LTD layouts are thoroughly studied to check the functional complexity, fabrication difficulty and irreversible power dissipation of QCA register layouts.

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