scholarly journals Synthesis of Single-Crystal Graphene on Copper Foils Using a Low-Nucleation-Density Region in a Quartz Boat

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1236
Author(s):  
Kaiqiang Yang ◽  
Jianlong Liu ◽  
Ruirui Jiang ◽  
Yubin Gong ◽  
Baoqing Zeng ◽  
...  
Keyword(s):  
Single Crystal ◽  
Vapor Deposition ◽  
Copper Foil ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Monolayer Graphene ◽  
Nucleation Density ◽  
Density Region ◽  
Copper Foils ◽  
Quartz Boat

The nucleation of graphene at different locations in the quartz boat was studied, and the lowest nucleation density of graphene in the quartz boat was found. The nucleation density of graphene is the lowest at the bottom of the quartz boat near the gas inlet side. Based on the above results, a simple and reproducible way is proposed to significantly suppress the nucleation density of graphene on the copper foil during the chemical vapor deposition process. Placing the copper foil with an area of 1.3 cm × 1 cm in the middle of the bottom of the quartz boat or further back, and placing two copper pockets in front of the copper foil, an ultra-low nucleation density of ~42 nucleus/cm2 was achieved on the back of the copper foil. Single-crystal monolayer graphene with a lateral size of 800 μm can be grown on the back of copper foils after 60 min of growth. Raman spectroscopy revealed the single-crystal graphene to be in uniform monolayers with a low D-band intensity.

Controllable Synthesis of Single-Crystal Monolayer Graphene on Copper Foils by Low-Pressure Chemical Vapor Deposition

2013 ◽  
Vol 562-565 ◽  
pp. 79-84
Author(s):  
Lei Guo ◽  
Xue Kang Chen ◽  
Lan Xi Wang ◽  
Sheng Zhu Cao ◽  
Xiao Hang Bai ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Large Scale ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Monolayer Graphene ◽  
Controllable Synthesis ◽  
Copper Foils ◽  
Pressure Chemical

~50 μm single crystal graphene with hexagonal flower shape was synthesized on copper foils by low pressure chemical vapor deposition (LPCVD). The strong influence of Cu foils annealing on suppressing the nucleation of graphene was observed. Scanning electron microscopy (SEM), Optical microscopy (OM), and Raman spectrum showed that single crystal graphene as grown was monolayer with high quality. Suppressing nucleation through an annealing procedure offers an promising way to grow large-scale single crystal graphene controllably.

scholarly journals Oxide-assisted growth of scalable single-crystalline graphene with seamlessly stitched millimeter-sized domains on commercial copper foils

RSC Advances ◽  
2018 ◽  
Vol 8 (16) ◽  
pp. 8800-8804 ◽  
Author(s):  
Yang Wang ◽  
Yu Cheng ◽  
Yunlu Wang ◽  
Shuai Zhang ◽  
Xuewei Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Crystalline ◽  
Copper Foils ◽  
Different Types ◽  
Commercial Copper

Chemical vapor deposition is used for the growth of scalable single-crystal graphene by seamlessly stitching millimeter-sized aligned hexagonal domains on different types of commercial Cu foils, without repeated substrate polishing and H2annealing.

Reaction couples of ceramic thin films prepared by CVD

1988 ◽  
Vol 46 ◽  
pp. 798-799
Author(s):  
D.W. Susnitzky ◽  
S.R. Summerfelt ◽  
C.B. Carter
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Solid State Reactions ◽  
Spatial Distributions ◽  
Diffusion Couples ◽  
Kinetics Studies ◽  
Ceramic Thin Films ◽  
Initial Stage

Solid-state reactions have traditionally been studied in the form of diffusion couples. This ‘bulk’ approach has been modified, for the specific case of the reaction between NiO and Al2O3, by growing NiAl2O4 (spinel) from electron-transparent Al2O3 TEM foils which had been exposed to NiO vapor at 1415°C. This latter ‘thin-film’ approach has been used to characterize the initial stage of spinel formation and to produce clean phase boundaries since further TEM preparation is not required after the reaction is completed. The present study demonstrates that chemical-vapor deposition (CVD) can be used to deposit NiO particles, with controlled size and spatial distributions, onto Al2O3 TEM specimens. Chemical reactions do not occur during the deposition process, since CVD is a relatively low-temperature technique, and thus the NiO-Al2O3 interface can be characterized. Moreover, a series of annealing treatments can be performed on the same sample which allows both Ni0-NiAl2O4 and NiAl2O4-Al2O3 interfaces to be characterized and which therefore makes this technique amenable to kinetics studies of thin-film reactions.

Sign in / Sign up

Export Citation Format

Share Document