scholarly journals A Piezoresistive Pressure Sensor with Optimized Positions and Thickness of Piezoresistors

Micromachines ◽  
2021 ◽  
Vol 12 (9) ◽  
pp. 1095
Author(s):  
Qinggang Meng ◽  
Yulan Lu ◽  
Junbo Wang ◽  
Deyong Chen ◽  
Jian Chen
Keyword(s):  
Pressure Sensor ◽  
Good Accuracy ◽  
High Sensitivity ◽  
Silicon On Insulator ◽  
Pressure Measurements ◽  
Pressure Sensitive ◽  
Piezoresistive Pressure Sensor ◽  
Different Temperatures ◽  
Good Repeatability ◽  
Electrical Connections

In this paper, a piezoresistive pressure sensor based on silicon on insulator (SOI) was presented, which was composed of an SOI layer with sensing elements and a glass cap for a hermetic package. Different from its conventional counterparts, the position and thickness of the four piezoresistors was optimized based on numerical simulation, which suggests that two piezoresistors at the center while the other two at the edge of the pressure-sensitive diaphragm and a thickness of 2 μm can produce the maximum sensitivity and the minimum nonlinearity. Due to the use of silicon rather than metal for electrical connections, the piezoresistive pressure sensor was fabricated in a highly simplified process. From the experimental results, the fabricated piezoresistive pressure sensor demonstrated a high sensitivity of 37.79 mV·V−1·MPa−1, a high full-scale (FS) output of 472.33 mV, a low hysteresis of 0.09% FS, a good repeatability of 0.03% FS and a good accuracy of 0.06% FS at 20 °C. A temperature coefficient of sensitivity of 0.44 mV·MPa−1·°C−1 and a low zero drift were also shown at different temperatures. The piezoresistive pressure sensor developed in this study may function as an enabling tool in pressure measurements.

Study and Analysis of MEMS Pressure Sensor Based on Applied Mechanics

2013 ◽  
Vol 771 ◽  
pp. 159-162
Author(s):  
Li Feng Qi ◽  
Zhi Min Liu ◽  
Xing Ye Xu ◽  
Guan Zhong Chen ◽  
Xue Qing
Keyword(s):  
Finite Element Analysis ◽  
Pressure Sensor ◽  
High Sensitivity ◽  
Scientific Basis ◽  
Sensor Chip ◽  
Applied Mechanics ◽  
Beam Structure ◽  
Element Analysis ◽  
Sensor Development ◽  
Piezoresistive Pressure Sensor

The relative research of low range and high anti-overload piezoresistive pressure sensor is carried out in this paper and a new kind of sensor chip structure, the double ends-four beam structure, is proposed. Trough the analysis, the sensor chip structure designed in this paper has high sensitivity and linearity. The chip structure is specially suit for the micro-pressure sensor. The theoretical analysis and finite element analysis is taken in this paper, which provide important scientific basis for the pressure sensor development.

Modeling and Simulation of the Thermal Drift Characteristics of the Piezoresistive Pressure Sensor

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000373-000378
Author(s):  
R. Otmani ◽  
N. Benmoussa ◽  
K. Ghaffour
Keyword(s):  
Thermal Behavior ◽  
Modeling And Simulation ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Thermal Drift ◽  
Piezoresistive Pressure Sensor ◽  
Output Characteristics ◽  
Piezoresistive Pressure Sensors

Piezoresistive pressure sensors based on Silicon have a large thermal drift because of their high sensitivity to temperature (ten times more sensitive to temperature than metals). So the study of the thermal behavior of these sensors is essential to define the parameters that cause the drift of the output characteristics. In this study, we adopted the behavior of 2nd degree gauges depending on the temperature. Then we model the thermal behavior of the sensor and its characteristics.

scholarly journals Nano Carbon Black-Based High Performance Wearable Pressure Sensors

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 664 ◽  
Author(s):  
Junsong Hu ◽  
Junsheng Yu ◽  
Ying Li ◽  
Xiaoqing Liao ◽  
Xingwu Yan ◽  
...  
Keyword(s):  
Carbon Black ◽  
Pressure Sensor ◽  
High Performance ◽  
Large Scale ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Wearable Electronics ◽  
Atmospheric Pollutant ◽  
Piezoresistive Pressure Sensor ◽  
Nano Carbon

The reasonable design pattern of flexible pressure sensors with excellent performance and prominent features including high sensitivity and a relatively wide workable linear range has attracted significant attention owing to their potential application in the advanced wearable electronics and artificial intelligence fields. Herein, nano carbon black from kerosene soot, an atmospheric pollutant generated during the insufficient burning of hydrocarbon fuels, was utilized as the conductive material with a bottom interdigitated textile electrode screen printed using silver paste to construct a piezoresistive pressure sensor with prominent performance. Owing to the distinct loose porous structure, the lumpy surface roughness of the fabric electrodes, and the softness of polydimethylsiloxane, the piezoresistive pressure sensor exhibited superior detection performance, including high sensitivity (31.63 kPa−1 within the range of 0–2 kPa), a relatively large feasible range (0–15 kPa), a low detection limit (2.26 pa), and a rapid response time (15 ms). Thus, these sensors act as outstanding candidates for detecting the human physiological signal and large-scale limb movement, showing their broad range of application prospects in the advanced wearable electronics field.

Design and Optimization of a Highly Sensitive and Linearity Piezoresistive Pressure Sensor Based on a Combination of Cross Beam-Peninsula-Membrane Structure

2017 ◽  
Author(s):  
Tran Anh Vang ◽  
Xianmin Zhang ◽  
Benliang Zhu
Keyword(s):  
Pressure Sensor ◽  
Pressure Sensors ◽  
Single Crystal Silicon ◽  
High Sensitivity ◽  
Crystal Silicon ◽  
Nonlinearity Error ◽  
Trade Off ◽  
Design And Optimization ◽  
Piezoresistive Pressure Sensor ◽  
Piezoresistive Pressure Sensors

The sensitivity and linearity trade-off problem has become the hotly important issues in designing the piezoresistive pressure sensors. To solve these trade-off problems, this paper presents the design, optimization, fabrication, and experiment of a novel piezoresistive pressure sensor for micro pressure measurement based on a combined cross beam - membrane and peninsula (CBMP) structure diaphragm. Through using finite element method (FEM), the proposed sensor performances as well as comparisons with other sensor structures are simulated and analyzed. Compared with the cross beam-membrane (CBM) structure, the sensitivity of CBMP structure sensor is increased about 38.7 % and nonlinearity error is reduced nearly 8%. In comparison with the peninsula structure, the maximum non-linearity error of CBMP sensor is decreased about 40% and the maximum deflection is extremely reduced 73%. Besides, the proposed sensor fabrication is performed on the n-type single crystal silicon wafer. The experimental results of the fabricated sensor with CBMP membrane has a high sensitivity of 23.4 mV/kPa and a low non-linearity of −0.53% FSS in the pressure range 0–10 kPa at the room temperature. According to the excellent performance, the sensor can be applied to measure micro-pressure lower than 10 kPa.

scholarly journals A Temperature-Insensitive Resonant Pressure Micro Sensor Based on Silicon-on-Glass Vacuum Packaging

Sensors ◽  
2019 ◽  
Vol 19 (18) ◽  
pp. 3866 ◽  
Author(s):  
Pengcheng Yan ◽  
Yulan Lu ◽  
Chao Xiang ◽  
Junbo Wang ◽  
Deyong Chen ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Vacuum Packaging ◽  
Silicon On Insulator ◽  
Pressure Measurements ◽  
Element Analysis ◽  
Pressure Sensitive ◽  
Order Of Magnitude ◽  
Micro Sensor ◽  
Q Factors ◽  
Fitting Error

This paper presents a temperature-insensitive resonant pressure sensor, which is mainly composed of a silicon-on-insulator (SOI) wafer for pressure measurements and a silicon-on-glass (SOG) cap for vacuum packaging. The variations of pressure under measurement bend the pressure sensitive diaphragm and regulate the intrinsic frequencies of the resonators in the device layer. While, variations of temperature cannot significantly change the intrinsic frequencies of the resonators, due to the SOG cap to offset generated thermal stress. Numerical simulations, based on finite element analysis, were conducted to calculate the residual thermal stress and optimize the sensing structures. Experimental results show that the Q-factors of the resonators are higher than 16,000, with a differential pressure sensitivity of 11.89 Hz/kPa, a nonlinearity of 0.01% F.S and a low fitting error of 0.01% F.S with the pressure varying from 100 kPa to 1000 kPa. In particular, a temperature sensitivity of ~1 Hz/°C was obtained in the range of −45 °C to 65 °C, which is one order of magnitude lower than the previously reported counterparts.

Piezoresistive pressure sensor with high sensitivity for medical application using peninsula-island structure

2017 ◽  
Vol 12 (4) ◽  
pp. 546-553 ◽  
Author(s):  
Tingzhong Xu ◽  
Hongyan Wang ◽  
Yong Xia ◽  
Zhiming Zhao ◽  
Mimi Huang ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
High Sensitivity ◽  
Medical Application ◽  
Island Structure ◽  
Piezoresistive Pressure Sensor

scholarly journals A Novel Piezoresistive MEMS Pressure Sensors Based on Temporary Bonding Technology

Sensors ◽  
2020 ◽  
Vol 20 (2) ◽  
pp. 337 ◽  
Author(s):  
Peishuai Song ◽  
Chaowei Si ◽  
Mingliang Zhang ◽  
Yongmei Zhao ◽  
Yurong He ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Blood Pressure Measurement ◽  
Pressure Sensors ◽  
Silicon On Insulator ◽  
Bonding Layer ◽  
Chip Area ◽  
Piezoresistive Pressure Sensor ◽  
Temporary Bonding ◽  
Bonding Technology ◽  
Sensing Membrane

A miniature piezoresistive pressure sensor fabricated by temporary bonding technology was reported in this paper. The sensing membrane was formed on the device layer of an SOI (Silicon-On-Insulator) wafer, which was bonded to borosilicate glass (Borofloat 33, BF33) wafer for supporting before releasing with Cu-Cu bonding after boron doping and electrode patterning. The handle layer was bonded to another BF33 wafer after thinning and etching. Finally, the substrate BF33 wafer was thinned by chemical mechanical polishing (CMP) to reduce the total device thickness. The copper temporary bonding layer was removed by acid solution after dicing to release the sensing membrane. The chip area of the fabricated pressure sensor was of 1600 μm × 650 μm × 104 μm, and the size of a sensing membrane was of 100 μm × 100 μm × 2 μm. A higher sensitivity of 36 μV/(V∙kPa) in the range of 0–180 kPa was obtained. By further reducing the width, the fabricated miniature pressure sensor could be easily mounted in a medical catheter for the blood pressure measurement.

Stress and frequency analysis of silicon diaphragm of MEMS based piezoresistive pressure sensor

2019 ◽  
Vol 33 (07) ◽  
pp. 1950040 ◽  
Author(s):  
Samridhi ◽  
Manish Kumar ◽  
Sachin Dhariwal ◽  
Kulwant Singh ◽  
P. A. Alvi
Keyword(s):  
Frequency Analysis ◽  
Pressure Sensor ◽  
Dynamic Environment ◽  
High Sensitivity ◽  
Vibrational Modes ◽  
Piezoresistive Effect ◽  
Micro Electro Mechanical Systems ◽  
Enhanced Sensitivity ◽  
Piezoresistive Pressure Sensor ◽  
Frame Work

This paper reports the stress and frequency analysis of dynamic silicon diaphragm during the simulation of micro-electro-mechanical-systems (MEMS) based piezoresistive pressure sensor with the help of finite element method (FEM) within the frame work of COMSOL software. Vibrational modes of rectangular diaphragm of piezoresistive pressure sensor have been determined at different frequencies for different pressure ranges. Optimal frequency range for particular applications for any diaphragm is a very important so that MEMS sensors performance should not degrade during the dynamic environment. Therefore, for the MEMS pressure sensor having applications in dynamic environment, the diaphragm frequency of 280 KHz has been optimized for the diaphragm thickness of 50 [Formula: see text]m and hence this frequency can be considered for showing the better piezoresistive effect and high sensitivity. Moreover, the designed pressure sensor shows the high linearity and enhanced sensitivity of the order of ([Formula: see text]0.5066 mV/psi).

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