scholarly journals A Novel Piezoresistive MEMS Pressure Sensors Based on Temporary Bonding Technology

Sensors ◽  
2020 ◽  
Vol 20 (2) ◽  
pp. 337 ◽  
Author(s):  
Peishuai Song ◽  
Chaowei Si ◽  
Mingliang Zhang ◽  
Yongmei Zhao ◽  
Yurong He ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Blood Pressure Measurement ◽  
Pressure Sensors ◽  
Silicon On Insulator ◽  
Bonding Layer ◽  
Chip Area ◽  
Piezoresistive Pressure Sensor ◽  
Temporary Bonding ◽  
Bonding Technology ◽  
Sensing Membrane

A miniature piezoresistive pressure sensor fabricated by temporary bonding technology was reported in this paper. The sensing membrane was formed on the device layer of an SOI (Silicon-On-Insulator) wafer, which was bonded to borosilicate glass (Borofloat 33, BF33) wafer for supporting before releasing with Cu-Cu bonding after boron doping and electrode patterning. The handle layer was bonded to another BF33 wafer after thinning and etching. Finally, the substrate BF33 wafer was thinned by chemical mechanical polishing (CMP) to reduce the total device thickness. The copper temporary bonding layer was removed by acid solution after dicing to release the sensing membrane. The chip area of the fabricated pressure sensor was of 1600 μm × 650 μm × 104 μm, and the size of a sensing membrane was of 100 μm × 100 μm × 2 μm. A higher sensitivity of 36 μV/(V∙kPa) in the range of 0–180 kPa was obtained. By further reducing the width, the fabricated miniature pressure sensor could be easily mounted in a medical catheter for the blood pressure measurement.

A SOI-MEMS Piezoresistive Atmosphere Pressure Sensor

2013 ◽  
Vol 562-565 ◽  
pp. 394-397
Author(s):  
Li Dong Du ◽  
Zhan Zhao ◽  
Li Xiao ◽  
Meng Ying Zhang ◽  
Zhen Fang
Keyword(s):  
Silicon Wafer ◽  
Pressure Sensor ◽  
Strain Gauge ◽  
Pressure Sensors ◽  
Micro Electro Mechanical System ◽  
Silicon On Insulator ◽  
Anodic Bonding ◽  
Atmosphere Pressure ◽  
Piezoresistive Pressure Sensor ◽  
The Cost

In this paper, a SOI-MEMS (silicon on insulator- micro electro mechanical system) pizeoresistive atmosphere pressure sensor is presented using anodic bonding. Differently from the prevailing fabrication process of silicon piezoresistive pressure sensor: the device layer monocrystalline of SOI silicon wafer is used as the strain gauge with a simple deep etching process; and the SiO2 layer of SOI silicon wafer as the insulator between strain gauge and substrate. The whole fabrication processes of the designed sensor are very simple, and can reduce the cost of sensor. The Pressure-Voltage characteristic test results suggest a precision within 0.14% in linear fitting. It is shown that the temperature coefficient is 2718ppm/°C from the Typical temperature curve of the pressure sensors.

Design and Simulation of Pressure Sensor for Ocean Depth Measurements

2013 ◽  
Vol 313-314 ◽  
pp. 666-670 ◽  
Author(s):  
K.J. Suja ◽  
Bhanu Pratap Chaudhary ◽  
Rama Komaragiri
Keyword(s):  
Pressure Sensor ◽  
Integrated Circuit ◽  
Output Voltage ◽  
Pressure Sensors ◽  
Micro Electro Mechanical System ◽  
Constant Thickness ◽  
Piezoresistive Pressure Sensor ◽  
Wide Pressure Range ◽  
Processing Techniques ◽  
Wide Pressure

MEMS (Micro Electro Mechanical System) are usually defined as highly miniaturized devices combining both electrical and mechanical components that are fabricated using integrated circuit batch processing techniques. Pressure sensors are usually manufactured using square or circular diaphragms of constant thickness in the order of few microns. In this work, a comparison between circular diaphragm and square diaphragm indicates that square diaphragm has better perspectives. A new method for designing diaphragm of the Piezoresistive pressure sensor for linearity over a wide pressure range (approximately double) is designed, simulated and compared with existing single diaphragm design with respect to diaphragm deflection and sensor output voltage.

Modeling and Simulation of the Thermal Drift Characteristics of the Piezoresistive Pressure Sensor

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000373-000378
Author(s):  
R. Otmani ◽  
N. Benmoussa ◽  
K. Ghaffour
Keyword(s):  
Thermal Behavior ◽  
Modeling And Simulation ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Thermal Drift ◽  
Piezoresistive Pressure Sensor ◽  
Output Characteristics ◽  
Piezoresistive Pressure Sensors

Piezoresistive pressure sensors based on Silicon have a large thermal drift because of their high sensitivity to temperature (ten times more sensitive to temperature than metals). So the study of the thermal behavior of these sensors is essential to define the parameters that cause the drift of the output characteristics. In this study, we adopted the behavior of 2nd degree gauges depending on the temperature. Then we model the thermal behavior of the sensor and its characteristics.

scholarly journals Nano Carbon Black-Based High Performance Wearable Pressure Sensors

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 664 ◽  
Author(s):  
Junsong Hu ◽  
Junsheng Yu ◽  
Ying Li ◽  
Xiaoqing Liao ◽  
Xingwu Yan ◽  
...  
Keyword(s):  
Carbon Black ◽  
Pressure Sensor ◽  
High Performance ◽  
Large Scale ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Wearable Electronics ◽  
Atmospheric Pollutant ◽  
Piezoresistive Pressure Sensor ◽  
Nano Carbon

The reasonable design pattern of flexible pressure sensors with excellent performance and prominent features including high sensitivity and a relatively wide workable linear range has attracted significant attention owing to their potential application in the advanced wearable electronics and artificial intelligence fields. Herein, nano carbon black from kerosene soot, an atmospheric pollutant generated during the insufficient burning of hydrocarbon fuels, was utilized as the conductive material with a bottom interdigitated textile electrode screen printed using silver paste to construct a piezoresistive pressure sensor with prominent performance. Owing to the distinct loose porous structure, the lumpy surface roughness of the fabric electrodes, and the softness of polydimethylsiloxane, the piezoresistive pressure sensor exhibited superior detection performance, including high sensitivity (31.63 kPa−1 within the range of 0–2 kPa), a relatively large feasible range (0–15 kPa), a low detection limit (2.26 pa), and a rapid response time (15 ms). Thus, these sensors act as outstanding candidates for detecting the human physiological signal and large-scale limb movement, showing their broad range of application prospects in the advanced wearable electronics field.

Design and Optimization of a Highly Sensitive and Linearity Piezoresistive Pressure Sensor Based on a Combination of Cross Beam-Peninsula-Membrane Structure

2017 ◽  
Author(s):  
Tran Anh Vang ◽  
Xianmin Zhang ◽  
Benliang Zhu
Keyword(s):  
Pressure Sensor ◽  
Pressure Sensors ◽  
Single Crystal Silicon ◽  
High Sensitivity ◽  
Crystal Silicon ◽  
Nonlinearity Error ◽  
Trade Off ◽  
Design And Optimization ◽  
Piezoresistive Pressure Sensor ◽  
Piezoresistive Pressure Sensors

The sensitivity and linearity trade-off problem has become the hotly important issues in designing the piezoresistive pressure sensors. To solve these trade-off problems, this paper presents the design, optimization, fabrication, and experiment of a novel piezoresistive pressure sensor for micro pressure measurement based on a combined cross beam - membrane and peninsula (CBMP) structure diaphragm. Through using finite element method (FEM), the proposed sensor performances as well as comparisons with other sensor structures are simulated and analyzed. Compared with the cross beam-membrane (CBM) structure, the sensitivity of CBMP structure sensor is increased about 38.7 % and nonlinearity error is reduced nearly 8%. In comparison with the peninsula structure, the maximum non-linearity error of CBMP sensor is decreased about 40% and the maximum deflection is extremely reduced 73%. Besides, the proposed sensor fabrication is performed on the n-type single crystal silicon wafer. The experimental results of the fabricated sensor with CBMP membrane has a high sensitivity of 23.4 mV/kPa and a low non-linearity of −0.53% FSS in the pressure range 0–10 kPa at the room temperature. According to the excellent performance, the sensor can be applied to measure micro-pressure lower than 10 kPa.

MEMS piezoresistive pressure sensor with patterned thinning of diaphragm

2020 ◽  
Vol 37 (3) ◽  
pp. 147-153
Author(s):  
Zoheir Kordrostami ◽  
Kourosh Hassanli ◽  
Amir Akbarian
Keyword(s):  
Pressure Sensor ◽  
Design Methodology ◽  
Pressure Sensors ◽  
Mems Sensors ◽  
Sensors And Actuators ◽  
Content Type ◽  
Sensor Performance ◽  
Piezoresistive Pressure Sensor ◽  
Piezoelectric Pressure Sensor ◽  
First Time

Purpose The purpose of this study is to find a new design that can increase the sensitivity of the sensor without sacrificing the linearity. A novel and very efficient method for increasing the sensitivity of MEMS pressure sensor has been proposed for the first time. Rather than perforation, we propose patterned thinning of the diaphragm so that specific regions on it are thinner. This method allows the diaphragm to deflect more in response with regard to the pressure. The best excavation depth has been calculated and a pressure sensor with an optimal pattern for thinned regions has been designed. Compared to the perforated diaphragm with the same pattern, larger output voltage is achieved for the proposed sensor. Unlike the perforations that have to be near the edges of the diaphragm, it is possible for the thin regions to be placed around the center of the diaphragm. This significantly increases the sensitivity of the sensor. In our designation, we have reached a 60 per cent thinning (of the diaphragm area) while perforations larger than 40 per cent degrade the operation of the sensor. The proposed method is applicable to other MEMS sensors and actuators and improves their ultimate performance. Design/methodology/approach Instead of perforating the diaphragm, we propose a patterned thinning scheme which improves the sensor performance. Findings By using thinned regions on the diaphragm rather than perforations, the sensitivity of the sensor was improved. The simulation results show that the proposed design provides larger membrane deflections and higher output voltages compared to the pressure sensors with a normal or perforated diaphragm. Originality/value The proposed MEMS piezoelectric pressure sensor for the first time takes advantage of thinned diaphragm with optimum pattern of thinned regions, larger outputs and larger sensitivity compared with the simple or perforated diaphragm pressure sensors.

scholarly journals Hermeticity Analysis on SiC Cavity Structure for All-SiC Piezoresistive Pressure Sensor

Sensors ◽  
2021 ◽  
Vol 21 (2) ◽  
pp. 379
Author(s):  
Baohua Tian ◽  
Haiping Shang ◽  
Lihuan Zhao ◽  
Dahai Wang ◽  
Yang Liu ◽  
...  
Keyword(s):  
High Temperature ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
Absolute Pressure ◽  
Microstructure Observation ◽  
Thermal Expansion Coefficients ◽  
Piezoresistive Pressure Sensor ◽  
Cavity Structure ◽  
Sic Wafer ◽  
Temperature Applications

The hermeticity performance of the cavity structure has an impact on the long-term stability of absolute pressure sensors for high temperature applications. In this paper, a bare silicon carbide (SiC) wafer was bonded to a patterned SiC substrate with shallow grooves based on a room temperature direct bonding process to achieve a sealed cavity structure. Then the hermeticity analysis on the SiC cavity structure was performed. The microstructure observation demonstrates that the SiC wafers are tightly bonded and the cavities remain intact. Moreover, the tensile testing indicates that the tensile strength of bonding interface is ~8.01 MPa. Moreover, the quantitative analysis on the airtightness of cavity structure through leakage detection shows a helium leak rate of ~1.3 × 10−10 Pa⋅m3/s, which satisfies the requirement of the specification in the MIL-STD-883H. The cavity structure can also avoid an undesirable deep etching process and the problem caused by the mismatch of thermal expansion coefficients, which can be potentially further developed into an all-SiC piezoresistive pressure sensor employable for high temperature applications.

scholarly journals A Low Temperature Drifting Acoustic Wave Pressure Sensor with an Integrated Vacuum Cavity for Absolute Pressure Sensing

Sensors ◽  
2020 ◽  
Vol 20 (6) ◽  
pp. 1788 ◽  
Author(s):  
Tao Wang ◽  
Zhengjie Tang ◽  
Huamao Lin ◽  
Kun Zhan ◽  
Jiang Wan ◽  
...  
Keyword(s):  
Low Temperature ◽  
Acoustic Wave ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
Silicon On Insulator ◽  
Absolute Pressure ◽  
Temperature Drift ◽  
Wave Pressure ◽  
The Absolute ◽  
Vacuum Cavity

In this paper we demonstrate a novel acoustic wave pressure sensor, based on an aluminum nitride (AlN) piezoelectric thin film. It contains an integrated vacuum cavity, which is micro-fabricated using a cavity silicon-on-insulator (SOI) wafer. This sensor can directly measure the absolute pressure without the help of an external package, and the vacuum cavity gives the sensor a very accurate reference pressure. Meanwhile, the presented pressure sensor is superior to previously reported acoustic wave pressure sensors in terms of the temperature drift. With the carefully designed dual temperature compensation structure, a very low temperature coefficient of frequency (TCF) is achieved. Experimental results show the sensor can measure the absolute pressure in the range of 0 to 0.4 MPa, while the temperature range is from 20 °C to 220 °C with a TCF of −14.4 ppm/°C. Such a TCF is only about half of that of previously reported works.

Temperature Characteristic of Platinum Piezoresistive Pressure Sensor

2011 ◽  
Vol 483 ◽  
pp. 180-184 ◽  
Author(s):  
Li Dong Du ◽  
Li Xiao ◽  
Zhan Zhao ◽  
Zhen Fang ◽  
Jing Xu ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
Pressure Sensor ◽  
Adhesive Bonding ◽  
Temperature Characteristic ◽  
Bonding Layer ◽  
Resistance Change ◽  
Atmosphere Pressure ◽  
Piezoresistive Pressure Sensor ◽  
Sensing Material ◽  
The Relationship

Temperature characteristic of platinum piezoresistive atmosphere pressure sensor is studied in this paper, in which platinum is used as the sensing material and SU-8 is used as adhesive bonding layer. Normally, temperature variation will bring on resistance change of sensing platinum resistor with a linear relationship. Simultaneously, the thermal expansion mismatching in different material will also change the resistance. They both affect the temperature characteristic of sensor. Based on elasticity theory, the relationship between resistance change and thermal expansion mismatching is analyzed and is not linear. Sum of two parts resistance change is still nonlinear. Because the output of atmosphere pressure sensor is proportional to resistance change, relationship between output and temperature change is also nonlinear. The analysis is consistent with the experimental results.

Flexible and Highly Sensitive Piezoresistive Pressure Sensor with Sandpaper as a Mold

NANO ◽  
2019 ◽  
Vol 14 (07) ◽  
pp. 1950081 ◽  
Author(s):  
Wendan Jia ◽  
Qiang Zhang ◽  
Yongqiang Cheng ◽  
Dong Zhao ◽  
Yan Liu ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Mass Production ◽  
Silver Nanowires ◽  
Low Cost ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Device Structure ◽  
Simple Method ◽  
Piezoresistive Pressure Sensor ◽  
Flexible Pressure Sensors

Flexible pressure sensors based on piezoresistive induction have recently become a research hotspot due to the simple device structure, low energy consumption, easy readout mechanism and excellent performance. For practical applications, flexible pressure sensors with both high sensitivity and low-cost mass production are highly desirable. Herein, this paper presents a high-sensitivity piezoresistive pressure sensor based on a micro-structured elastic electrode, which is low cost and can be mass-produced by a simple method of sandpaper molding. The micro-structure of the electrode surface under external pressure causes a change in the effective contact area and the distance between the electrodes, which exhibits great pressure sensitivity. The test results show that the surface structure is twice as sensitive as the planar structure under low pressure conditions. This is because of the special morphology of silver nanowires (AgNWs), which exhibits the tip of nanostructures on the surface and realizes the quantum tunneling mechanism. The sensor has high sensitivity for transmitting signals in real time and it can also be used to detect various contact actions. The low cost mass production and high sensitivity of flexible pressure sensors pave the way for electronic skin, wearable healthcare monitors and contact inspection applications.

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